JP2017123263A - 電極の作製方法、および電極を備える表示装置の作製方法 - Google Patents
電極の作製方法、および電極を備える表示装置の作製方法 Download PDFInfo
- Publication number
- JP2017123263A JP2017123263A JP2016001474A JP2016001474A JP2017123263A JP 2017123263 A JP2017123263 A JP 2017123263A JP 2016001474 A JP2016001474 A JP 2016001474A JP 2016001474 A JP2016001474 A JP 2016001474A JP 2017123263 A JP2017123263 A JP 2017123263A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- mask
- manufacturing
- substrate
- organic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 239000012044 organic layer Substances 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000004544 sputter deposition Methods 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims abstract description 14
- 230000001681 protective effect Effects 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 9
- 239000013077 target material Substances 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 150000002484 inorganic compounds Chemical class 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- -1 polysiloxane Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
- C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
本実施形態では、本発明の一実施形態に係る表示装置の作製方法を図1乃至図6を用いて説明する。本実施形態では、表示装置が含有する発光素子の作製方法を例として説明を行う。
後述するように、発光素子は少なくとも一つの透光性電極を有している。透光性電極を成膜するためのスパッタリング装置100の断面模式図を図1に示す。
次に発光素子の作製方法を図2乃至図8を用いて説明する。図2(A)に示すように、基板220上に第1の電極221を形成する。基板220は発光素子に物理的強度を与えるものであり、これ以降の製造工程の環境下に耐えることができるものであればよい。具体的には、石英、ガラス、プラスチック、金属などを用いることができる。基板220は可撓性を有していてもよい。
本実施形態では、第1実施形態を適用することで作製される表示装置を説明する。上述したように、第1実施形態で示した表示装置の作製方法により、ターゲット150から弾き飛ばされる大きなターゲット材の塊228の堆積を防ぐことができるが、この方法を用いることにより、作製した電極の表面に周期的に凸部を形成することができる。
Claims (16)
- 基板上に第1の電極を形成し、
前記第1の電極上に発光層を有する有機層を形成し、
透光性を有する導電性酸化物を含むターゲットをスパッタすることによって前記有機層上に第2の電極を形成することを含み、
前記第2の電極の形成時において、前記有機層と前記ターゲットの間にマスクを設置し、
前記マスクは周期的に配列した、最大幅が0.1μm以上3μm以下の貫通孔を有する、表示装置の作製方法。 - 基板上に第1の電極を形成し、
前記第1の電極上に有機層を形成し、
周期的に配列した貫通孔を有するマスクを前記有機層上に設置し、
透光性を有する導電性酸化物を含むターゲットをスパッタすることによって前記有機層上に第2の電極を形成することを含み、
前記貫通孔の最大面積は、前記有機層と前記第1の電極が接する面積よりも小さい、表示装置の作製方法。 - 前記最大幅が1μm以上、3μm以下である、請求項1に記載の作製方法。
- 前記複数の貫通孔のピッチが0.2μm以上、6μm以下である、請求項1または2に記載の作製方法。
- 前記複数の貫通孔のピッチが2μm以上、6μm以下である、請求項1または2に記載の作製方法。
- 前記マスクが金属を有する、請求項1または2に記載の作製方法。
- 前記第2の電極上に、厚さが0.1μm以上、5μm以下の保護膜を形成することをさらに含む、請求項1または2に記載の作製方法。
- 前記第2の電極を形成した後に、前記マスクに直流電圧、あるいは交流電圧を印加することを含む、請求項1または2に記載の作製方法。
- 前記マスクは前記ターゲットよりも前記基板に近く設置される、請求項1または2に記載の作製方法。
- 前記マスクと前記基板との距離が1mm以上、10mm以下の距離になるように前記マスクが設置される、請求項1または2に記載の作製方法。
- 前記複数の貫通孔が円形状を有している、請求項1または2に記載の作製方法。
- 前記複数の貫通孔がハニカムパターン、あるいはマトリックスパターンに配置されている、請求項1または2に記載の作製方法。
- チャンバーと、
前記チャンバー内に位置し、ターゲットを保持するホルダーと、
前記チャンバー内かつ前記ホルダーの下に位置し、基板を支持するステージと、
前記チャンバー内に放電を誘起する電源と、
前記チャンバーへガスを供給するガス供給部と、
周期的に配置された複数の貫通孔を有するマスクを保持し前記基板と前記ターゲット間に設置するマスクホルダーを有する、成膜装置。 - 前記基板に対する前記マスクの位置を調整するアライメント機構をさらに有する、請求項13に記載の成膜装置。
- 前記基板は複数の副画素を有し、
前記アライメント機構は、前記複数の貫通孔が前記複数の副画素の一つと重なるように前記マスクの位置を調整する、請求項14に記載の成膜装置。 - 前記マスクに直流電圧、あるいは交流電圧を印加する第2の電源を有する、請求項13に記載の成膜装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016001474A JP6656720B2 (ja) | 2016-01-07 | 2016-01-07 | 電極の作製方法、および電極を備える表示装置の作製方法 |
KR1020160144974A KR102025374B1 (ko) | 2016-01-07 | 2016-11-02 | 전극의 제조 방법 및 전극을 구비하는 표시 장치의 제조 방법 |
US15/351,712 US9985254B2 (en) | 2016-01-07 | 2016-11-15 | Manufacturing method of electrode and display device including the electrode |
CN201611043533.3A CN107046049B (zh) | 2016-01-07 | 2016-11-21 | 显示装置的制造方法和成膜装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016001474A JP6656720B2 (ja) | 2016-01-07 | 2016-01-07 | 電極の作製方法、および電極を備える表示装置の作製方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020013303A Division JP7055156B2 (ja) | 2020-01-30 | 2020-01-30 | 表示装置製造用マスク |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017123263A true JP2017123263A (ja) | 2017-07-13 |
JP2017123263A5 JP2017123263A5 (ja) | 2019-02-07 |
JP6656720B2 JP6656720B2 (ja) | 2020-03-04 |
Family
ID=59276443
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016001474A Active JP6656720B2 (ja) | 2016-01-07 | 2016-01-07 | 電極の作製方法、および電極を備える表示装置の作製方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9985254B2 (ja) |
JP (1) | JP6656720B2 (ja) |
KR (1) | KR102025374B1 (ja) |
CN (1) | CN107046049B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110767675B (zh) * | 2018-08-06 | 2022-06-17 | 云谷(固安)科技有限公司 | 显示面板、显示屏和显示终端 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11126691A (ja) * | 1997-10-24 | 1999-05-11 | Nec Corp | 有機el素子およびその製造方法 |
JP2003031363A (ja) * | 2001-07-16 | 2003-01-31 | Sharp Corp | スパッタ装置およびそれを用いた有機el素子パネルの製造方法並びに有機el素子 |
JP2007095324A (ja) * | 2005-09-27 | 2007-04-12 | Hitachi Displays Ltd | 有機el表示パネルの製造方法、及びこの製造方法により製造した有機el表示パネル |
JP2007321172A (ja) * | 2006-05-30 | 2007-12-13 | Toppan Printing Co Ltd | 透明導電膜形成方法及び有機電界発光素子の製造方法 |
JP2011225932A (ja) * | 2010-04-20 | 2011-11-10 | Fuji Electric Co Ltd | パターン成膜のためのスパッタリング成膜装置 |
JP2014189866A (ja) * | 2013-03-28 | 2014-10-06 | Atsumi Tec:Kk | スパッタリング装置 |
JP2015040330A (ja) * | 2013-08-22 | 2015-03-02 | 株式会社ブイ・テクノロジー | スパッタリング成膜装置及びスパッタリング成膜方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2755281B2 (ja) * | 1992-12-28 | 1998-05-20 | 富士電機株式会社 | 薄膜太陽電池およびその製造方法 |
KR100462046B1 (ko) * | 2001-11-05 | 2004-12-16 | 네오뷰코오롱 주식회사 | 유기물 디스플레이의 무기물막 증착 장치 |
KR101002351B1 (ko) * | 2003-12-16 | 2010-12-17 | 엘지디스플레이 주식회사 | 유기 전계발광 소자의 투명전극 제조방법 및 장치 |
KR100806704B1 (ko) * | 2004-04-22 | 2008-02-27 | (주)케이디티 | 유기 전계 발광 소자용 투명 전도성 전극의 형성방법 |
JP2008084541A (ja) | 2006-09-25 | 2008-04-10 | Fujifilm Corp | 有機el表示装置及びその製造方法 |
WO2011055440A1 (ja) * | 2009-11-05 | 2011-05-12 | キヤノン株式会社 | 表示装置 |
JP2014086314A (ja) * | 2012-10-24 | 2014-05-12 | Japan Display Inc | 有機エレクトロルミネッセンス表示装置 |
JP2015065268A (ja) * | 2013-09-25 | 2015-04-09 | ソニー株式会社 | レンズアレイおよびその製造方法、固体撮像装置、並びに電子機器 |
-
2016
- 2016-01-07 JP JP2016001474A patent/JP6656720B2/ja active Active
- 2016-11-02 KR KR1020160144974A patent/KR102025374B1/ko active IP Right Grant
- 2016-11-15 US US15/351,712 patent/US9985254B2/en active Active
- 2016-11-21 CN CN201611043533.3A patent/CN107046049B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11126691A (ja) * | 1997-10-24 | 1999-05-11 | Nec Corp | 有機el素子およびその製造方法 |
JP2003031363A (ja) * | 2001-07-16 | 2003-01-31 | Sharp Corp | スパッタ装置およびそれを用いた有機el素子パネルの製造方法並びに有機el素子 |
JP2007095324A (ja) * | 2005-09-27 | 2007-04-12 | Hitachi Displays Ltd | 有機el表示パネルの製造方法、及びこの製造方法により製造した有機el表示パネル |
JP2007321172A (ja) * | 2006-05-30 | 2007-12-13 | Toppan Printing Co Ltd | 透明導電膜形成方法及び有機電界発光素子の製造方法 |
JP2011225932A (ja) * | 2010-04-20 | 2011-11-10 | Fuji Electric Co Ltd | パターン成膜のためのスパッタリング成膜装置 |
JP2014189866A (ja) * | 2013-03-28 | 2014-10-06 | Atsumi Tec:Kk | スパッタリング装置 |
JP2015040330A (ja) * | 2013-08-22 | 2015-03-02 | 株式会社ブイ・テクノロジー | スパッタリング成膜装置及びスパッタリング成膜方法 |
Also Published As
Publication number | Publication date |
---|---|
US9985254B2 (en) | 2018-05-29 |
KR20170082968A (ko) | 2017-07-17 |
US20170200922A1 (en) | 2017-07-13 |
CN107046049B (zh) | 2020-11-06 |
KR102025374B1 (ko) | 2019-11-04 |
JP6656720B2 (ja) | 2020-03-04 |
CN107046049A (zh) | 2017-08-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10026926B2 (en) | Flexible organic light emitting diode display device and method of fabricating the same | |
KR102082407B1 (ko) | 플렉서블 기판, 플렉서블 표시 장치, 및 플렉서블 표시 장치의 제조 방법 | |
US8729538B2 (en) | Organic light emitting diode device and method for fabricating the same | |
TW201917882A (zh) | 有機發光二極體顯示器 | |
KR100879294B1 (ko) | 유기 발광 표시 장치 | |
EP3321985A1 (en) | Electroluminescent display device and method of fabricating the same | |
US10418423B2 (en) | Organic EL device | |
US20100291720A1 (en) | Method of fabricating organic light emitting diode display | |
JP6726973B2 (ja) | 表示装置 | |
WO2018179132A1 (ja) | 表示デバイスの製造方法、表示デバイス、表示デバイスの製造装置、成膜装置 | |
KR102618039B1 (ko) | 마스크 조립체, 이를 포함한 표시 장치의 제조장치 및 표시 장치의 제조방법 | |
CN111937494B (zh) | 显示器件以及显示器件的制造方法 | |
JP6656720B2 (ja) | 電極の作製方法、および電極を備える表示装置の作製方法 | |
KR20210120175A (ko) | 마스크 어셈블리, 표시 장치의 제조장치, 및 표시 장치의 제조방법 | |
CN112750876A (zh) | 显示装置 | |
JP7055156B2 (ja) | 表示装置製造用マスク | |
US11696487B2 (en) | Mask assembly, apparatus for manufacturing display device, and method of manufacturing display device | |
US11404641B2 (en) | Method of manufacturing display apparatus | |
WO2012133203A1 (ja) | 蒸着膜パターンの形成方法および有機エレクトロルミネッセンス表示装置の製造方法 | |
KR20220004893A (ko) | 표시 장치의 제조 장치 및 표시 장치의 제조 방법 | |
JP2009276721A (ja) | 電気光学装置及びその検査方法並びに電子機器 | |
US10777633B2 (en) | Display device, display device manufacturing method, and display device manufacturing apparatus | |
CN110010787B (zh) | 电致发光显示装置 | |
JP2010102881A (ja) | 有機エレクトロルミネッセンス表示装置及びその製造方法 | |
JP2018156722A (ja) | 有機elパネル |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181218 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181218 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190913 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191015 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191211 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200107 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200130 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6656720 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |