JP2017118414A5 - - Google Patents

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Publication number
JP2017118414A5
JP2017118414A5 JP2015253805A JP2015253805A JP2017118414A5 JP 2017118414 A5 JP2017118414 A5 JP 2017118414A5 JP 2015253805 A JP2015253805 A JP 2015253805A JP 2015253805 A JP2015253805 A JP 2015253805A JP 2017118414 A5 JP2017118414 A5 JP 2017118414A5
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JP
Japan
Prior art keywords
voltage
semiconductor device
ring oscillator
power supply
output line
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JP2015253805A
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English (en)
Japanese (ja)
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JP6703398B2 (ja
JP2017118414A (ja
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Priority to JP2015253805A priority Critical patent/JP6703398B2/ja
Priority claimed from JP2015253805A external-priority patent/JP6703398B2/ja
Priority to US15/367,019 priority patent/US10361685B2/en
Publication of JP2017118414A publication Critical patent/JP2017118414A/ja
Publication of JP2017118414A5 publication Critical patent/JP2017118414A5/ja
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JP2015253805A 2015-12-25 2015-12-25 半導体装置 Active JP6703398B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015253805A JP6703398B2 (ja) 2015-12-25 2015-12-25 半導体装置
US15/367,019 US10361685B2 (en) 2015-12-25 2016-12-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015253805A JP6703398B2 (ja) 2015-12-25 2015-12-25 半導体装置

Publications (3)

Publication Number Publication Date
JP2017118414A JP2017118414A (ja) 2017-06-29
JP2017118414A5 true JP2017118414A5 (enExample) 2018-07-05
JP6703398B2 JP6703398B2 (ja) 2020-06-03

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Family Applications (1)

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JP2015253805A Active JP6703398B2 (ja) 2015-12-25 2015-12-25 半導体装置

Country Status (2)

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US (1) US10361685B2 (enExample)
JP (1) JP6703398B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102765236B1 (ko) * 2016-12-12 2025-02-07 에스케이하이닉스 주식회사 반도체 장치 및 이를 포함하는 반도체 시스템
US10560047B2 (en) 2017-10-11 2020-02-11 Toyota Motor Engineering & Manufacturing North America, Inc. Method and apparatus for predicting degradation in power modules
JP6962795B2 (ja) * 2017-11-22 2021-11-05 ルネサスエレクトロニクス株式会社 半導体装置および半導体システム
KR102338628B1 (ko) * 2017-12-29 2021-12-10 에스케이하이닉스 주식회사 온도 센서 회로 및 이를 구비하는 반도체 장치
JP7236231B2 (ja) 2018-09-07 2023-03-09 ルネサスエレクトロニクス株式会社 半導体装置及び解析システム
KR102576342B1 (ko) * 2018-11-23 2023-09-07 삼성전자주식회사 반도체 장치 및 반도체 장치의 동작 방법
CN111366259B (zh) * 2018-12-26 2022-02-18 杭州广立微电子股份有限公司 一种可重构的全数字温度传感器及测温方法
CN111371433B (zh) * 2018-12-26 2023-04-11 杭州广立微电子股份有限公司 一种可重构的全数字温度传感器及其应用
JP7241652B2 (ja) 2019-09-17 2023-03-17 ルネサスエレクトロニクス株式会社 半導体装置、電子装置および電子システム
US11823962B2 (en) * 2021-02-19 2023-11-21 Qualcomm Incorporated Back end of line (BEOL) process corner sensing
JP2024072439A (ja) 2022-11-16 2024-05-28 ルネサスエレクトロニクス株式会社 半導体装置
US12352807B2 (en) * 2023-04-03 2025-07-08 Avago Technologies International Sales Pte. Limited Ultra-compact and micropower circuit to monitor process, voltage, and temperature with high accuracy

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5331295A (en) * 1993-02-03 1994-07-19 National Semiconductor Corporation Voltage controlled oscillator with efficient process compensation
DE19949782C1 (de) * 1999-10-15 2001-07-12 Texas Instruments Deutschland PLL-Schaltung
US20030233624A1 (en) * 2002-06-13 2003-12-18 Texas Instruments Incorporated Method for predicting the degradation of an integrated circuit performance due to negative bias temperature instability
US6724214B2 (en) 2002-09-13 2004-04-20 Chartered Semiconductor Manufacturing Ltd. Test structures for on-chip real-time reliability testing
KR100657171B1 (ko) * 2005-04-29 2006-12-20 삼성전자주식회사 리프레쉬 제어회로 및 리프레쉬 제어방법
US7629856B2 (en) * 2006-10-27 2009-12-08 Infineon Technologies Ag Delay stage, ring oscillator, PLL-circuit and method
US7495519B2 (en) * 2007-04-30 2009-02-24 International Business Machines Corporation System and method for monitoring reliability of a digital system
US7642864B2 (en) * 2008-01-29 2010-01-05 International Business Machines Corporation Circuits and design structures for monitoring NBTI (negative bias temperature instability) effect and/or PBTI (positive bias temperature instability) effect
KR101585231B1 (ko) * 2009-01-06 2016-01-14 삼성전자주식회사 전원 전압 및 온도 변화에 상관없이 일정한 오실레이션신호를 공급할 수 있는 오실레이터, 및 상기 오실레이터를 포함하는 신호처리장치
US9535473B2 (en) * 2009-10-30 2017-01-03 Apple Inc. Compensating for aging in integrated circuits
JP2011165796A (ja) * 2010-02-08 2011-08-25 Renesas Electronics Corp 劣化検出回路
JP5516873B2 (ja) 2010-04-21 2014-06-11 日本電気株式会社 高温検出カウンタ回路を備えた端末装置
JP5854377B2 (ja) * 2011-03-23 2016-02-09 公立大学法人首都大学東京 Ｍｏｓトランジスタ集積回路およびｍｏｓトランジスタ劣化度合模擬算出システム
EP2932610A4 (en) * 2012-09-07 2016-10-05 Univ Virginia Patent Found SMALL POWER TRIGGER SOURCE

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