JP2018506197A5 - - Google Patents

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Publication number
JP2018506197A5
JP2018506197A5 JP2017530758A JP2017530758A JP2018506197A5 JP 2018506197 A5 JP2018506197 A5 JP 2018506197A5 JP 2017530758 A JP2017530758 A JP 2017530758A JP 2017530758 A JP2017530758 A JP 2017530758A JP 2018506197 A5 JP2018506197 A5 JP 2018506197A5
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JP
Japan
Prior art keywords
transistor
circuit
source
gate
limiting device
Prior art date
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Granted
Application number
JP2017530758A
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English (en)
Japanese (ja)
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JP6710687B2 (ja
JP2018506197A (ja
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Priority claimed from US14/642,309 external-priority patent/US10128823B2/en
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Publication of JP2018506197A publication Critical patent/JP2018506197A/ja
Publication of JP2018506197A5 publication Critical patent/JP2018506197A5/ja
Application granted granted Critical
Publication of JP6710687B2 publication Critical patent/JP6710687B2/ja
Active legal-status Critical Current
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JP2017530758A 2014-12-10 2015-11-06 大きな抵抗に関するサブスレショルド金属酸化膜半導体 Active JP6710687B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462089927P 2014-12-10 2014-12-10
US62/089,927 2014-12-10
US14/642,309 US10128823B2 (en) 2014-12-10 2015-03-09 Subthreshold metal oxide semiconductor for large resistance
US14/642,309 2015-03-09
PCT/US2015/059451 WO2016093991A1 (en) 2014-12-10 2015-11-06 Subthreshold metal oxide semiconductor for large resistance

Publications (3)

Publication Number Publication Date
JP2018506197A JP2018506197A (ja) 2018-03-01
JP2018506197A5 true JP2018506197A5 (enExample) 2018-11-22
JP6710687B2 JP6710687B2 (ja) 2020-06-17

Family

ID=54557494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017530758A Active JP6710687B2 (ja) 2014-12-10 2015-11-06 大きな抵抗に関するサブスレショルド金属酸化膜半導体

Country Status (6)

Country Link
US (1) US10128823B2 (enExample)
EP (1) EP3231088B1 (enExample)
JP (1) JP6710687B2 (enExample)
CN (1) CN107251429B (enExample)
ES (1) ES2821452T3 (enExample)
WO (1) WO2016093991A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180116842A (ko) 2017-04-18 2018-10-26 에스케이하이닉스 주식회사 강유전체 트랜지스터를 포함하는 뉴로모픽 소자의 시냅스 시스템
US10574212B2 (en) * 2017-11-21 2020-02-25 Mediatek Inc. Method and circuit for low-noise reference signal generation
US10944394B2 (en) * 2018-09-05 2021-03-09 Texas Instruments Incorporated Methods and apparatus to reduce leakage current
CN110416968A (zh) * 2019-08-09 2019-11-05 无锡启腾电子科技有限公司 一种电子保险丝及其工作方法
JP7514505B2 (ja) * 2020-03-19 2024-07-11 ザインエレクトロニクス株式会社 増幅装置
US12388420B2 (en) 2022-06-01 2025-08-12 Mediatek Inc. Noise filter circuit with controllable transistor off-resistance and associated noise filtering method
CN114924606A (zh) * 2022-06-02 2022-08-19 泉芯电子技术(深圳)有限公司 低功耗高电源抑制比的ldo电路
CN115459727A (zh) * 2022-09-20 2022-12-09 思瑞浦微电子科技（苏州）股份有限公司 伪电阻电路、rc滤波电路、电流镜电路及芯片

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS588770B2 (ja) * 1976-04-21 1983-02-17 株式会社島津製作所 フイルタ装置
US4682047A (en) * 1985-08-29 1987-07-21 Siemens Aktiengesellschaft Complementary metal-oxide-semiconductor input circuit
DE69632098T2 (de) 1995-04-21 2005-03-24 Nippon Telegraph And Telephone Corp. MOSFET Schaltung und ihre Anwendung in einer CMOS Logikschaltung
EP0849878A3 (en) * 1996-12-19 2002-06-26 Texas Instruments Incorporated Improvements in or relating to integrated circuits
US5973524A (en) 1998-03-25 1999-10-26 Silsym, Inc. Obtaining accurate on-chip time-constants and conductances
JP3919956B2 (ja) * 1998-10-29 2007-05-30 ローム株式会社 インピーダンス変更回路
JP2002124835A (ja) * 2000-10-13 2002-04-26 Seiko Epson Corp 演算増幅回路、定電圧回路および基準電圧回路
US6392465B1 (en) 2000-12-18 2002-05-21 National Semiconductor Corporation Sub-threshold CMOS integrator
KR100502972B1 (ko) * 2002-12-04 2005-07-26 주식회사 코아매직 리프레쉬 동작용 클럭발생기
US6753726B1 (en) 2003-01-31 2004-06-22 Sun Microsystems, Inc. Apparatus and method for an offset-correcting sense amplifier
EP1612511B1 (en) 2004-07-01 2015-05-20 Softkinetic Sensors Nv TOF rangefinding with large dynamic range and enhanced background radiation suppression
JP4764086B2 (ja) * 2005-07-27 2011-08-31 パナソニック株式会社 半導体集積回路装置
US7800435B2 (en) 2006-12-11 2010-09-21 Fairchild Semiconductor Corporation Audio filter using a diode connected MOSFET
US8054156B2 (en) 2008-08-26 2011-11-08 Atmel Corporation Low variation resistor
US8898356B2 (en) * 2013-03-15 2014-11-25 Microchip Technology Incorporated Combined power and input/output line
US9104223B2 (en) * 2013-05-14 2015-08-11 Intel IP Corporation Output voltage variation reduction

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