JP2018037801A5 - - Google Patents
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- Publication number
- JP2018037801A5 JP2018037801A5 JP2016168465A JP2016168465A JP2018037801A5 JP 2018037801 A5 JP2018037801 A5 JP 2018037801A5 JP 2016168465 A JP2016168465 A JP 2016168465A JP 2016168465 A JP2016168465 A JP 2016168465A JP 2018037801 A5 JP2018037801 A5 JP 2018037801A5
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- voltage
- source
- amplifier circuit
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 6
- 239000012212 insulator Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 210000000746 body region Anatomy 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016168465A JP6588878B2 (ja) | 2016-08-30 | 2016-08-30 | 高周波半導体増幅回路 |
| US15/460,879 US9954493B2 (en) | 2016-08-30 | 2017-03-16 | High frequency semiconductor amplifier circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016168465A JP6588878B2 (ja) | 2016-08-30 | 2016-08-30 | 高周波半導体増幅回路 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019144666A Division JP2019216452A (ja) | 2019-08-06 | 2019-08-06 | 高周波半導体増幅回路 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018037801A JP2018037801A (ja) | 2018-03-08 |
| JP2018037801A5 true JP2018037801A5 (enExample) | 2018-10-11 |
| JP6588878B2 JP6588878B2 (ja) | 2019-10-09 |
Family
ID=61243754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016168465A Active JP6588878B2 (ja) | 2016-08-30 | 2016-08-30 | 高周波半導体増幅回路 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US9954493B2 (enExample) |
| JP (1) | JP6588878B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6630303B2 (ja) | 2017-02-24 | 2020-01-15 | 株式会社東芝 | 高周波半導体増幅回路 |
| JP2020005177A (ja) * | 2018-06-29 | 2020-01-09 | 株式会社東芝 | 高周波増幅回路 |
| JP7246873B2 (ja) * | 2018-07-26 | 2023-03-28 | 三星電子株式会社 | 電力増幅器 |
| US11489495B2 (en) * | 2020-07-14 | 2022-11-01 | Psemi Corporation | Cascode gain boosting and linear gain control using gate resistor |
| JP7626368B2 (ja) * | 2020-12-23 | 2025-02-07 | 株式会社デンソー | 半導体集積回路 |
| CN113114117A (zh) * | 2021-04-08 | 2021-07-13 | 唐太平 | 一种用于共源共栅射频低噪声放大器共栅管的偏置电路 |
| US12278600B2 (en) * | 2021-12-28 | 2025-04-15 | Raytheon Company | Amplifier bias circuit |
| US20240022221A1 (en) * | 2022-07-15 | 2024-01-18 | Qualcomm Incorporated | Amplifier with bias circuit having replicated transconductance devices |
| JP2024117327A (ja) * | 2023-02-17 | 2024-08-29 | 株式会社村田製作所 | 増幅回路、電力増幅回路、および、バイアス生成回路 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3123485B2 (ja) * | 1997-11-06 | 2001-01-09 | 日本電気株式会社 | 半導体電力増幅器 |
| DE69906725D1 (de) * | 1999-08-31 | 2003-05-15 | St Microelectronics Srl | Hochgenaue Vorspannungsschaltung für eine CMOS Kaskodenstufe, insbesondere für rauscharme Verstärker |
| KR100489693B1 (ko) * | 2001-02-16 | 2005-05-17 | 인티그런트 테크놀로지즈(주) | 선형성이 향상된 증폭 회로 및 믹서 회로 |
| US6977553B1 (en) * | 2002-09-11 | 2005-12-20 | Marvell International Ltd. | Method and apparatus for an LNA with high linearity and improved gain control |
| US6778016B2 (en) * | 2002-11-04 | 2004-08-17 | Koninklijke Philips Eletronics N.V. | Simple self-biased cascode amplifier circuit |
| US6965270B1 (en) * | 2003-12-18 | 2005-11-15 | Xilinx, Inc. | Regulated cascode amplifier with controlled saturation |
| JP4575818B2 (ja) * | 2005-03-24 | 2010-11-04 | Okiセミコンダクタ株式会社 | 増幅回路用バイアス回路 |
| JP2006303850A (ja) | 2005-04-20 | 2006-11-02 | Renesas Technology Corp | 高周波電力増幅回路および無線通信端末 |
| JP2008306360A (ja) | 2007-06-06 | 2008-12-18 | Toshiba Corp | 低雑音増幅器 |
| JP5012412B2 (ja) | 2007-10-25 | 2012-08-29 | 富士通株式会社 | 増幅装置及びバイアス回路 |
| US7696828B2 (en) * | 2008-01-04 | 2010-04-13 | Qualcomm, Incorporated | Multi-linearity mode LNA having a deboost current path |
| JP2009207030A (ja) * | 2008-02-29 | 2009-09-10 | Nippon Telegr & Teleph Corp <Ntt> | 電力増幅回路および無線通信回路 |
| US7911279B2 (en) * | 2008-11-26 | 2011-03-22 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Amplifier with bias circuit providing improved linearity |
| JP2012099915A (ja) * | 2010-10-29 | 2012-05-24 | Asahi Kasei Electronics Co Ltd | 広帯域増幅器 |
| JP5743850B2 (ja) * | 2011-10-28 | 2015-07-01 | 株式会社東芝 | 集積回路 |
| JP6204772B2 (ja) | 2013-09-20 | 2017-09-27 | 株式会社東芝 | カスコード増幅器 |
-
2016
- 2016-08-30 JP JP2016168465A patent/JP6588878B2/ja active Active
-
2017
- 2017-03-16 US US15/460,879 patent/US9954493B2/en active Active
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