JP2015043686A5 - - Google Patents

Download PDF

Info

Publication number
JP2015043686A5
JP2015043686A5 JP2014150301A JP2014150301A JP2015043686A5 JP 2015043686 A5 JP2015043686 A5 JP 2015043686A5 JP 2014150301 A JP2014150301 A JP 2014150301A JP 2014150301 A JP2014150301 A JP 2014150301A JP 2015043686 A5 JP2015043686 A5 JP 2015043686A5
Authority
JP
Japan
Prior art keywords
circuit
switch
generation circuit
timer
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014150301A
Other languages
English (en)
Japanese (ja)
Other versions
JP6343507B2 (ja
JP2015043686A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2014150301A priority Critical patent/JP6343507B2/ja
Priority claimed from JP2014150301A external-priority patent/JP6343507B2/ja
Publication of JP2015043686A publication Critical patent/JP2015043686A/ja
Publication of JP2015043686A5 publication Critical patent/JP2015043686A5/ja
Application granted granted Critical
Publication of JP6343507B2 publication Critical patent/JP6343507B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2014150301A 2013-07-26 2014-07-24 Ｄｃｄｃコンバータ Active JP6343507B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014150301A JP6343507B2 (ja) 2013-07-26 2014-07-24 Ｄｃｄｃコンバータ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013155112 2013-07-26
JP2013155112 2013-07-26
JP2014150301A JP6343507B2 (ja) 2013-07-26 2014-07-24 Ｄｃｄｃコンバータ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018096830A Division JP6594480B2 (ja) 2013-07-26 2018-05-21 Ｄｃｄｃコンバータ

Publications (3)

Publication Number Publication Date
JP2015043686A JP2015043686A (ja) 2015-03-05
JP2015043686A5 true JP2015043686A5 (enExample) 2017-09-07
JP6343507B2 JP6343507B2 (ja) 2018-06-13

Family

ID=52389943

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2014150301A Active JP6343507B2 (ja) 2013-07-26 2014-07-24 Ｄｃｄｃコンバータ
JP2018096830A Expired - Fee Related JP6594480B2 (ja) 2013-07-26 2018-05-21 Ｄｃｄｃコンバータ
JP2019172929A Active JP6830518B2 (ja) 2013-07-26 2019-09-24 Ｄｃｄｃコンバータ

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2018096830A Expired - Fee Related JP6594480B2 (ja) 2013-07-26 2018-05-21 Ｄｃｄｃコンバータ
JP2019172929A Active JP6830518B2 (ja) 2013-07-26 2019-09-24 Ｄｃｄｃコンバータ

Country Status (4)

Country Link
US (1) US9444337B2 (enExample)
JP (3) JP6343507B2 (enExample)
KR (1) KR102157221B1 (enExample)
TW (1) TWI641208B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9343288B2 (en) 2013-07-31 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20170063112A1 (en) * 2015-08-31 2017-03-02 Semiconductor Energy Laboratory Co., Ltd. Power storage device with monitoring ic
KR20180095836A (ko) * 2015-12-18 2018-08-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 상기 반도체 장치를 포함한 표시 장치
US10120470B2 (en) 2016-07-22 2018-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and electronic device
KR102469151B1 (ko) 2017-06-26 2022-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 전자 기기
US11501695B2 (en) 2018-09-12 2022-11-15 Semiconductor Energy Laboratory Co., Ltd. Display device
US12101067B2 (en) 2019-06-07 2024-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Family Cites Families (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JPH06242847A (ja) * 1992-12-24 1994-09-02 Hitachi Ltd 基準電圧発生回路
US5705891A (en) * 1993-09-30 1998-01-06 Hitachi Denshi Kabushiki Kaisha Power supply for reducing the power consumption of digital oscilloscope
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
US5663675A (en) * 1995-06-07 1997-09-02 American Microsystems, Inc. Multiple stage tracking filter using a self-calibrating RC oscillator circuit
WO1997006554A2 (en) 1995-08-03 1997-02-20 Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
US7061014B2 (en) 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
US7049190B2 (en) 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US6756842B2 (en) * 2002-05-08 2004-06-29 Analog Devices, Inc. AC coupled multistage high gain operational amplifier
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
KR101019337B1 (ko) 2004-03-12 2011-03-07 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 및 박막 트랜지스터
WO2005088816A1 (ja) * 2004-03-15 2005-09-22 Rohm Co., Ltd 電源装置
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
CN101057338B (zh) 2004-11-10 2011-03-16 佳能株式会社 采用无定形氧化物的场效应晶体管
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
CN101057333B (zh) 2004-11-10 2011-11-16 佳能株式会社 发光器件
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
CA2585190A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI569441B (zh) 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI472037B (zh) 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
EP1998374A3 (en) 2005-09-29 2012-01-18 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR101358954B1 (ko) 2005-11-15 2014-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 다이오드 및 액티브 매트릭스 표시장치
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
WO2008133345A1 (en) 2007-04-25 2008-11-06 Canon Kabushiki Kaisha Oxynitride semiconductor
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
US8202365B2 (en) 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP2010081686A (ja) * 2008-09-24 2010-04-08 Panasonic Corp スイッチング制御回路及びスイッチング電源装置
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
US7710094B1 (en) * 2008-12-12 2010-05-04 Hong Kong Applied Science And Technology Research Institute Co., Ltd. Current-mode-controlled current sensor circuit for power switching converter
US8879283B2 (en) * 2009-11-05 2014-11-04 On-Bright Electronics (Shanghai) Co., Ltd. System and method providing protection in the event of current sensing failure for power converter
CN102714023B (zh) * 2010-01-20 2016-05-04 株式会社半导体能源研究所 液晶显示设备的驱动方法
JP2012019500A (ja) * 2010-06-10 2012-01-26 Panasonic Corp バイアス回路および無線通信機
WO2011155295A1 (en) 2010-06-10 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Dc/dc converter, power supply circuit, and semiconductor device
JP2012079399A (ja) * 2010-09-10 2012-04-19 Semiconductor Energy Lab Co Ltd 半導体装置
US9362820B2 (en) 2010-10-07 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. DCDC converter, semiconductor device, and power generation device
US8513935B2 (en) * 2010-12-16 2013-08-20 Integrated Device Technology, Inc. Combinations of current feedback for frequency compensation, overload detection, and super overload detection in switching power converters
US8610422B2 (en) * 2012-01-24 2013-12-17 Synopsys, Inc. Dynamic biasing of an amplifier using capacitive driving of internal bias voltages
JP5975907B2 (ja) 2012-04-11 2016-08-23 株式会社半導体エネルギー研究所 半導体装置

Similar Documents

Publication Publication Date Title
JP2015043686A5 (enExample)
JP2013168926A5 (ja) 半導体装置
JP2015062278A5 (ja) 信号処理回路
JP2011188477A5 (ja) 回路
EP3158586A4 (en) Monolithic integration of high voltage transistors&low voltage non-planar transistors
TW201613243A (en) Resonant converter, control circuit and associated control method with adaptive dead time adjustment
JP2013235564A5 (enExample)
JP2016184453A5 (ja) 半導体装置
WO2014116933A3 (en) Communications based adjustments of an envelope tracking power supply
JP2011205883A5 (ja) 昇圧回路
JP2016129394A5 (enExample)
TW201615003A (en) Imaging device and electronic device
TWI562520B (en) Circuit and method for controlling a switched capacitor dc-dc converter to generate an output voltage
JP2020029205A5 (enExample)
TW201644171A (en) Control circuit, control method and flyback converter of primary-side feedback control thereof
JP2015188297A5 (enExample)
JP2014142923A5 (enExample)
BR112016025328A2 (pt) ?módulo fotovoltaico, e, uso de uma composição de polipropileno?
JP2015129903A5 (ja) 半導体装置
EP2973554A4 (en) MECHANISM FOR ENABLING THE DYNAMIC ADJUSTMENT OF AUDIO INPUT / OUTPUT SETTINGS AT CONFERENCES BETWEEN COMPUTER DEVICES
EA201791517A1 (ru) Схема goa двунаправленной развертки
JP2012168899A5 (enExample)
JP2012256858A5 (ja) 半導体装置
JP2012257447A5 (enExample)
JP2015195331A5 (ja) 記憶装置