JP6588878B2 - 高周波半導体増幅回路 - Google Patents

高周波半導体増幅回路 Download PDF

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Publication number
JP6588878B2
JP6588878B2 JP2016168465A JP2016168465A JP6588878B2 JP 6588878 B2 JP6588878 B2 JP 6588878B2 JP 2016168465 A JP2016168465 A JP 2016168465A JP 2016168465 A JP2016168465 A JP 2016168465A JP 6588878 B2 JP6588878 B2 JP 6588878B2
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Japan
Prior art keywords
voltage
fet
transistor
drain
gate
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JP2016168465A
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English (en)
Japanese (ja)
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JP2018037801A5 (enExample
JP2018037801A (ja
Inventor
敏樹 瀬下
敏樹 瀬下
栗山　保彦
保彦 栗山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2016168465A priority Critical patent/JP6588878B2/ja
Priority to US15/460,879 priority patent/US9954493B2/en
Publication of JP2018037801A publication Critical patent/JP2018037801A/ja
Publication of JP2018037801A5 publication Critical patent/JP2018037801A5/ja
Application granted granted Critical
Publication of JP6588878B2 publication Critical patent/JP6588878B2/ja
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/305—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in case of switching on or off of a power supply
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/453—Controlling being realised by adding a replica circuit or by using one among multiple identical circuits as a replica circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/489—A coil being added in the source circuit of a common source stage, e.g. as degeneration means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/555—A voltage generating circuit being realised for biasing different circuit elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
JP2016168465A 2016-08-30 2016-08-30 高周波半導体増幅回路 Active JP6588878B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016168465A JP6588878B2 (ja) 2016-08-30 2016-08-30 高周波半導体増幅回路
US15/460,879 US9954493B2 (en) 2016-08-30 2017-03-16 High frequency semiconductor amplifier circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016168465A JP6588878B2 (ja) 2016-08-30 2016-08-30 高周波半導体増幅回路

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019144666A Division JP2019216452A (ja) 2019-08-06 2019-08-06 高周波半導体増幅回路

Publications (3)

Publication Number Publication Date
JP2018037801A JP2018037801A (ja) 2018-03-08
JP2018037801A5 JP2018037801A5 (enExample) 2018-10-11
JP6588878B2 true JP6588878B2 (ja) 2019-10-09

Family

ID=61243754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016168465A Active JP6588878B2 (ja) 2016-08-30 2016-08-30 高周波半導体増幅回路

Country Status (2)

Country Link
US (1) US9954493B2 (enExample)
JP (1) JP6588878B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6630303B2 (ja) 2017-02-24 2020-01-15 株式会社東芝 高周波半導体増幅回路
JP2020005177A (ja) * 2018-06-29 2020-01-09 株式会社東芝 高周波増幅回路
JP7246873B2 (ja) * 2018-07-26 2023-03-28 三星電子株式会社 電力増幅器
US11489495B2 (en) * 2020-07-14 2022-11-01 Psemi Corporation Cascode gain boosting and linear gain control using gate resistor
JP7626368B2 (ja) * 2020-12-23 2025-02-07 株式会社デンソー 半導体集積回路
CN113114117A (zh) * 2021-04-08 2021-07-13 唐太平 一种用于共源共栅射频低噪声放大器共栅管的偏置电路
US12278600B2 (en) * 2021-12-28 2025-04-15 Raytheon Company Amplifier bias circuit
US20240022221A1 (en) * 2022-07-15 2024-01-18 Qualcomm Incorporated Amplifier with bias circuit having replicated transconductance devices
JP2024117327A (ja) * 2023-02-17 2024-08-29 株式会社村田製作所 増幅回路、電力増幅回路、および、バイアス生成回路

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3123485B2 (ja) * 1997-11-06 2001-01-09 日本電気株式会社 半導体電力増幅器
DE69906725D1 (de) * 1999-08-31 2003-05-15 St Microelectronics Srl Hochgenaue Vorspannungsschaltung für eine CMOS Kaskodenstufe, insbesondere für rauscharme Verstärker
KR100489693B1 (ko) * 2001-02-16 2005-05-17 인티그런트 테크놀로지즈(주) 선형성이 향상된 증폭 회로 및 믹서 회로
US6977553B1 (en) * 2002-09-11 2005-12-20 Marvell International Ltd. Method and apparatus for an LNA with high linearity and improved gain control
US6778016B2 (en) * 2002-11-04 2004-08-17 Koninklijke Philips Eletronics N.V. Simple self-biased cascode amplifier circuit
US6965270B1 (en) * 2003-12-18 2005-11-15 Xilinx, Inc. Regulated cascode amplifier with controlled saturation
JP4575818B2 (ja) * 2005-03-24 2010-11-04 Ｏｋｉセミコンダクタ株式会社 増幅回路用バイアス回路
JP2006303850A (ja) 2005-04-20 2006-11-02 Renesas Technology Corp 高周波電力増幅回路および無線通信端末
JP2008306360A (ja) 2007-06-06 2008-12-18 Toshiba Corp 低雑音増幅器
JP5012412B2 (ja) 2007-10-25 2012-08-29 富士通株式会社 増幅装置及びバイアス回路
US7696828B2 (en) * 2008-01-04 2010-04-13 Qualcomm, Incorporated Multi-linearity mode LNA having a deboost current path
JP2009207030A (ja) * 2008-02-29 2009-09-10 Nippon Telegr & Teleph Corp <Ntt> 電力増幅回路および無線通信回路
US7911279B2 (en) * 2008-11-26 2011-03-22 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Amplifier with bias circuit providing improved linearity
JP2012099915A (ja) * 2010-10-29 2012-05-24 Asahi Kasei Electronics Co Ltd 広帯域増幅器
JP5743850B2 (ja) * 2011-10-28 2015-07-01 株式会社東芝 集積回路
JP6204772B2 (ja) 2013-09-20 2017-09-27 株式会社東芝 カスコード増幅器

Also Published As

Publication number Publication date
US9954493B2 (en) 2018-04-24
JP2018037801A (ja) 2018-03-08
US20180062581A1 (en) 2018-03-01

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