JP2017085183A - パッケージに組み込まれたシリコン貫通ビア(tsv)ダイを有するマルチチップ集積 - Google Patents
パッケージに組み込まれたシリコン貫通ビア(tsv)ダイを有するマルチチップ集積 Download PDFInfo
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- JP2017085183A JP2017085183A JP2017024980A JP2017024980A JP2017085183A JP 2017085183 A JP2017085183 A JP 2017085183A JP 2017024980 A JP2017024980 A JP 2017024980A JP 2017024980 A JP2017024980 A JP 2017024980A JP 2017085183 A JP2017085183 A JP 2017085183A
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- die
- adhesive layer
- tsv
- electrical wiring
- package assembly
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Abstract
Description
[項目1]
パッケージアセンブリであって、
複数のビルドアップ層を有するパッケージ基板と、
前記パッケージ基板に組み込まれた第1のダイであって、該第1のダイは、1つ又は複数のトランジスタを有する第1の側面と、該第1の側面の反対側の第2の側面と、第1のシリコン貫通ビア(TSV)と、前記第2の側面の第1の部分に配置された電気配線特徴部とを有し、前記電気配線特徴部は、前記第1のTSVによって前記1つ又は複数のトランジスタのうちの少なくとも1つのトランジスタと電気的に結合されている、第1のダイと、
前記第1のダイの前記第2の側面の第2の部分に配置された接着層と、
前記接着層と結合された第2のダイであって、該第2のダイは第2のTSVを有し、該第2のTSVは、前記第1のTSVと電気的に結合されている、第2のダイと、を備える、パッケージアセンブリ。
[項目2]
前記第2のダイはメモリダイであり、
前記電気配線特徴部はTSVパッドであり、
前記第1のTSVは、前記第1のダイの第1の複数のTSVのうちの1つであり、
前記第2のTSVは、前記第1の複数のTSVと一致するとともに前記第1の複数のTSVと垂直方向に位置合わせされて配列された、前記第2のダイの第2の複数のTSVのうちの1つである、項目1に記載のパッケージアセンブリ。
[項目3]
前記第2のダイは、3次元(3D)メモリダイスタックに構成された複数のメモリダイのうちの1つである、項目2に記載のパッケージアセンブリ。
[項目4]
前記電気配線特徴部は、第1のTSVパッドであり、前記第2のダイは、前記第2のTSVと結合された第2のTSVパッドを有し、該パッケージアセンブリは、前記第1のTSVパッド及び前記第2のTSVパッドと結合されたダイ相互接続部を更に備える、項目1に記載のパッケージアセンブリ。
[項目5]
前記第1のダイと前記第2のダイとの間に配置されたアンダーフィル層を更に備える、項目1に記載のパッケージアセンブリ。
[項目6]
前記アンダーフィル層の一部は、前記接着層と前記第1のダイとの間に配置されている、項目5に記載のパッケージアセンブリ。
[項目7]
前記第2のダイを密閉するように構成された成形材料の層を更に備える、項目1に記載のパッケージアセンブリ。
[項目8]
方法であって、
第1のダイを準備することであって、該第1のダイは、1つ又は複数のトランジスタを有する第1の側面と、電気配線特徴部を有する第2の側面と、前記電気配線特徴部に結合されるとともに前記第1の側面と前記第2の側面との間に配置される第1のシリコン貫通ビア(TSV)とを有することと、
前記第1のダイの前記第2の側面に接着層を結合することと、
前記第1のダイの前記第1の側面上に1つ又は複数のビルドアップ層を形成することと、
前記接着層に開口部を形成することと、
第2のダイを前記第1のダイの前記第2の側面と結合することであって、前記接着層は、前記第1のダイと前記第2のダイとの間に配置され、前記第2のダイは、第2のTSVを有し、前記第1のTSVは、前記開口部内を通って配置された導電パスによって前記第2のTSVと電気的に結合されることと、を含む、方法。
[項目9]
前記第1のダイの前記第2の側面に前記接着層を結合する前に、前記接着層を犠牲パネルに結合することを更に含む、項目8に記載の方法。
[項目10]
前記接着層に前記開口部を形成することは、前記第1のダイの前記第2の側面に前記接着層を結合する前に、前記接着層を通って前記犠牲パネルまで開口部を形成することを含み、前記第1のダイの前記第2の側面に前記接着層を結合することは、前記開口部に配置された前記電気配線特徴部を用いて前記接着層上に前記第1のダイの前記第2の側面を配置することを含む、項目9に記載の方法。
[項目11]
前記犠牲パネル上に銅層を形成することと、
前記銅層にキャビティを形成することと、を更に含み、前記接着層を前記犠牲パネルに結合することは、前記接着層を通って前記犠牲パネルまで前記開口部を形成する前に、前記接着層を前記キャビティ内に配置することを含む、項目10に記載の方法。
[項目12]
前記第1のダイの前記第2の側面に前記接着層を結合することは、前記接着層の一部を前記電気配線特徴部上に配置することを含み、前記方法は、
前記第1のダイ及び前記接着層を犠牲パネル上に配置することであって、前記接着層は、前記第1のダイと前記犠牲パネルとの間に配置されることと、
前記第1のダイの前記第1の側面上に前記1つ又は複数のビルドアップ層を形成した後に、前記犠牲パネルを前記接着層から除去することと、を更に含み、前記接着層に前記開口部を形成することは、前記犠牲パネルを除去して前記電気配線特徴部を露出させた後に、前記接着層の前記一部を除去することを含む、項目8に記載の方法。
[項目13]
前記接着層に前記開口部を形成することは、前記接着層の一部をレーザー放射にさらすことを含む、項目8に記載の方法。
[項目14]
前記接着層の前記一部をレーザー放射にさらすことは、レーザー投影パターニングツールによって実行される、項目13に記載の方法。
[項目15]
前記接着層の前記一部を除去することは、紫外線(UV)レーザーを用いて前記接着層の前記一部を走査することを更に含む、項目13に記載の方法。
[項目16]
前記第2のダイ及び前記1つ又は複数のビルドアップ層にわたって成形材料を付着させることを更に含み、前記第2のダイは、前記成形材料に組み込まれる、項目8に記載の方法。
[項目17]
前記第1のダイと前記第2のダイとの間にアンダーフィル材料を付着させることを更に含む、項目8に記載の方法。
[項目18]
システムであって、
回路基板と、
パッケージアセンブリであって、該パッケージアセンブリの外表面上に配置された電気配線特徴部を介して前記回路基板と結合され、
1つ又は複数のビルドアップ層を有する基板と、
前記基板に組み込まれた第1のダイであって、該第1のダイは、1つ又は複数のトランジスタを有する第1の側面と、該第1の側面の反対側の第2の側面と、第1のTSVと、前記第2の側面上の第1の電気配線特徴部とを有し、前記第1の側面は、前記第1のTSVによって前記第1の電気配線特徴部と電気的に結合されている、第1のダイと、
前記第1のダイの前記第2の側面に配置される接着層と、
第2のTSVと、該第2のTSVと電気的に結合された第2の電気配線特徴部とを有する第2のダイと、
前記第1の電気配線特徴部と前記第2の電気配線特徴部との間に配置されたダイ相互接続部と、
前記第1のTSV及び前記第2のTSVを含む電気パスであって、該電気パスは、前記1つ又は複数のビルドアップ層を通って前記第2のダイと前記回路基板との間で電気信号を配信する、電気パスと、を含む、パッケージアセンブリと、を備える、システム。
[項目19]
前記第1のTSVは、前記第1のダイの第1の複数のTSVのうちの1つであり、前記第2のダイは、3次元(3D)スタックに配列された複数のメモリダイであり、前記第2のTSVは、前記第1の複数のTSVと一致するとともに前記第1の複数のTSVと垂直方向に位置合わせされて配列された、前記第2のダイの複数のTSVのうちの1つである、項目18に記載のシステム。
[項目20]
前記第1のダイと前記第2のダイとの間に配置されたアンダーフィル材料、又は、
前記第2のダイを密封するように配置された成形コンパウンド、を更に備える、項目19に記載のシステム。
Claims (22)
- パッケージアセンブリであって、
複数のビルドアップ層を有するパッケージ基板と、
前記パッケージ基板に組み込まれた第1のダイであって、該第1のダイは、1つ又は複数のトランジスタを有する第1の側面と、該第1の側面の反対側の第2の側面と、第1のシリコン貫通ビア(第1のTSV)と、前記第2の側面上に配置された電気配線特徴部とを有し、前記電気配線特徴部は、前記第1のTSVによって、前記1つ又は複数のトランジスタのうちの少なくとも1つのトランジスタと電気的に結合されている、第1のダイと、
前記第1のダイの前記第2の側面と結合された第2のダイであって、該第2のダイは、第2のTSVを有し、該第2のTSVは、前記第1のTSVと電気的に結合されている、第2のダイと、
前記第1のダイの前記第2の側面に配置された接着層と、
前記接着層における開口部内に配置されたアンダーフィル層と、
を備え、前記電気配線特徴部は、前記接着層における前記開口部内に配置される、パッケージアセンブリ。 - 前記第2のダイはメモリダイであり、
前記電気配線特徴部はTSVパッドであり、
前記第1のTSVは、前記第1のダイの第1の複数のTSVのうちの1つであり、
前記第2のTSVは、前記第1の複数のTSVと一致するとともに前記第1の複数のTSVと垂直方向に位置合わせされて配列された、前記第2のダイの第2の複数のTSVのうちの1つである、請求項1に記載のパッケージアセンブリ。 - 前記第2のダイは、3次元(3D)メモリダイスタックに構成された複数のメモリダイのうちの1つである、請求項1または2に記載のパッケージアセンブリ。
- 前記電気配線特徴部は、第1のTSVパッドであり、前記第2のダイは、前記第2のTSVと結合された第2のTSVパッドを有し、該パッケージアセンブリは、前記第1のTSVパッド及び前記第2のTSVパッドと結合されたダイ相互接続部を更に備える、請求項1または2に記載のパッケージアセンブリ。
- 前記第1のダイと前記第2のダイとの間に配置されたアンダーフィル層を更に備える、請求項1または2に記載のパッケージアセンブリ。
- 前記アンダーフィル層の一部は、前記接着層と前記第1のダイとの間に配置されている、請求項1または2に記載のパッケージアセンブリ。
- 前記第2のダイを密閉する成形材料の層を更に備える、請求項1または2に記載のパッケージアセンブリ。
- 集積回路パッケージアセンブリを製造する方法であって、
第1のダイを準備することであって、該第1のダイは、1つ又は複数のトランジスタを有する第1の側面と、電気配線特徴部を有する第2の側面と、前記電気配線特徴部に結合されるとともに前記第1の側面と前記第2の側面との間に配置される第1のシリコン貫通ビア(第1のTSV)とを有することと、
接着層を犠牲パネルに結合することと、
前記接着層に開口部を形成することと、
前記第1のダイの前記第2の側面に前記接着層を結合することと、
前記第1のダイの前記第1の側面上に1つ又は複数のビルドアップ層を形成することと、
前記犠牲パネルを前記接着層から除去することと、
第2のダイを前記第1のダイの前記第2の側面と結合することであって、前記接着層は、前記第1のダイと前記第2のダイとの間に配置され、前記第2のダイは、第2のTSVを有し、前記第1のTSVは、前記開口部内を通って配置された導電パスによって前記第2のTSVと電気的に結合されることと、
前記接着層の前記開口部にアンダーフィル材料を配置することと、
を含む、集積回路パッケージアセンブリを製造する方法。 - 前記接着層に前記開口部を形成することは、前記第1のダイの前記第2の側面に前記接着層を結合する前に、前記接着層を通って前記犠牲パネルまで開口部を形成することを含み、前記第1のダイの前記第2の側面に前記接着層を結合することは、前記開口部に配置された前記電気配線特徴部を用いて前記接着層上に前記第1のダイの前記第2の側面を配置することを含む、請求項8に記載の方法。
- 前記犠牲パネル上に銅層を形成することと、
前記銅層にキャビティを形成することと、
を更に含み、前記接着層を前記犠牲パネルに結合することは、前記接着層を通って前記犠牲パネルまで前記開口部を形成する前に、前記接着層を前記キャビティ内に配置することを含む、請求項9に記載の方法。 - 集積回路パッケージアセンブリを製造する方法であって、
第1のダイを準備することであって、該第1のダイは、1つ又は複数のトランジスタを有する第1の側面と、電気配線特徴部を有する第2の側面と、前記電気配線特徴部に結合されるとともに前記第1の側面と前記第2の側面との間に配置される第1のシリコン貫通ビア(第1のTSV)とを有することと、
前記第1のダイの前記第2の側面に接着層を結合することと、
前記第1のダイ及び前記接着層を犠牲パネル上に配置することであって、前記接着層は、前記第1のダイと前記犠牲パネルとの間に配置されることと、
前記第1のダイの前記第1の側面上に1つ又は複数のビルドアップ層を形成することと、
前記犠牲パネルを前記接着層から除去することと、
前記接着層に開口部を形成することと、
第2のダイを前記第1のダイの前記第2の側面と結合することであって、前記接着層は、前記第1のダイと前記第2のダイとの間に配置され、前記第2のダイは、第2のTSVを有し、前記第1のTSVは、前記開口部内を通って配置された導電パスによって前記第2のTSVと電気的に結合されることと、
前記接着層の前記開口部にアンダーフィル材料を配置することと、
を含む、集積回路パッケージアセンブリを製造する方法。 - 前記第1のダイの前記第2の側面に前記接着層を結合することは、前記接着層の一部を前記電気配線特徴部上に配置することを含み、
前記接着層に前記開口部を形成することは、前記犠牲パネルを除去して前記電気配線特徴部を露出させた後に、前記接着層の前記一部を除去することを含む、請求項11に記載の方法。 - 前記接着層に前記開口部を形成することは、前記接着層の一部をレーザー放射にさらすことを含む、請求項8〜12のいずれか一項に記載の方法。
- 前記接着層の前記一部をレーザー放射にさらすことは、レーザー投影パターニングツールによって実行される、請求項13に記載の方法。
- 前記接着層の前記一部を除去することは、紫外線(UV)レーザーを用いて前記接着層の前記一部を走査することを更に含む、請求項13に記載の方法。
- 前記第2のダイ及び前記1つ又は複数のビルドアップ層にわたって成形材料を付着させることを更に含み、前記第2のダイは、前記成形材料に組み込まれる、請求項8〜15のいずれか1項に記載の方法。
- 前記第1のダイと前記第2のダイとの間にアンダーフィル材料を付着させることを更に含む、請求項8〜15のいずれか1項に記載の方法。
- コンピューティングデバイスであって、
回路基板と、
パッケージアセンブリであって、該パッケージアセンブリの外表面上に配置された電気配線特徴部を介して前記回路基板と結合され、
1つ又は複数のビルドアップ層を有する基板と、
前記基板に組み込まれた第1のダイであって、該第1のダイは、1つ又は複数のトランジスタを有する第1の側面と、該第1の側面の反対側の第2の側面と、第1のTSVと、前記第2の側面上の第1の電気配線特徴部とを有し、前記第1の側面は、前記第1のTSVによって前記第1の電気配線特徴部と電気的に結合されている、第1のダイと、
第2のTSVと、該第2のTSVと電気的に結合された第2の電気配線特徴部とを有する第2のダイと、
前記第1のダイの前記第2の側面に配置された接着層と、
前記接着層における開口部内に配置されたアンダーフィル材料と、
前記第1の電気配線特徴部と前記第2の電気配線特徴部との間に配置されたダイ相互接続部と、
前記第1のTSV及び前記第2のTSVを含む電気パスであって、該電気パスは、前記1つ又は複数のビルドアップ層を通って前記第2のダイと前記回路基板との間で電気信号を配信する、電気パスと、
を含み、前記電気配線特徴部は、前記接着層における前記開口部内に配置される、パッケージアセンブリと、
を備える、コンピューティングデバイス。 - 前記第1のダイは、マイクロプロセッサダイを含む、請求項18に記載のコンピューティングデバイス。
- 前記第1のTSVは、前記第1のダイの第1の複数のTSVのうちの1つであり、前記第2のダイは、3次元(3D)スタックに配列された複数のメモリダイのうちの1つであり、前記第2のTSVは、前記第1の複数のTSVと一致するとともに前記第1の複数のTSVと垂直方向に位置合わせされて配列された、前記第2のダイの複数のTSVのうちの1つである、請求項18に記載のコンピューティングデバイス。
- 前記第1のダイと前記第2のダイとの間に配置されたアンダーフィル材料、又は、
前記第2のダイを密封するように配置された成形コンパウンド、
を更に備える、請求項18〜20のいずれか1項に記載のコンピューティングデバイス。 - アンテナ、タッチスクリーンディスプレイ、タッチスクリーンコントローラー、バッテリー、全地球測位システム(GPS)デバイス、コンパス、スピーカー、カメラ、及びマスストレージデバイスのうちの1つ又は複数を更に備える、請求項18〜20のいずれか1項に記載のコンピューティングデバイス。
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