JP2017059570A - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 210000000746 body region Anatomy 0.000 claims abstract description 53
- 239000012535 impurity Substances 0.000 claims description 127
- 230000015556 catabolic process Effects 0.000 abstract description 22
- 229910010271 silicon carbide Inorganic materials 0.000 description 68
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 64
- 239000010410 layer Substances 0.000 description 37
- 230000005684 electric field Effects 0.000 description 18
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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Abstract
【解決手段】実施形態の半導体装置は、第1の面と第2の面とを有するSiC層と、SiC層内に設けられた第1導電型の第1のSiC領域、第2導電型の第1及び第2の低濃度ピラー領域、第1及び第2の低濃度ピラー領域と第1の面との間に設けられた第2導電型の第1及び第2の高濃度ピラー領域と、第1の高濃度ピラー領域と第2の高濃度ピラー領域との間に設けられたゲート電極と、第2導電型の第1及び第2のボディ領域と、ゲート絶縁膜と、第1及び第2の高濃度ピラー領域とゲート電極との間に設けられた第1及び第2のサイドピラー領域と、第1導電型の第1及び第2のソース領域と、を備える。
【選択図】図1
Description
本実施形態の半導体装置は、第1の面と第2の面とを有するSiC層と、SiC層内に設けられた第1導電型の第1のSiC領域と、第1のSiC領域内に設けられた第2導電型の第1の低濃度ピラー領域と、第1のSiC領域内に設けられた第2導電型の第2の低濃度ピラー領域と、第1の低濃度ピラー領域と第1の面との間に設けられ、第1の低濃度ピラー領域よりも第2導電型の不純物濃度の高い第2導電型の第1の高濃度ピラー領域と、第2の低濃度ピラー領域と第1の面との間に設けられ、第2の低濃度ピラー領域よりも第2導電型の不純物濃度の高い第2導電型の第2の高濃度ピラー領域と、少なくとも一部が第1の高濃度ピラー領域と第2の高濃度ピラー領域との間に設けられたゲート電極と、第1のSiC領域と第1の面との間に設けられ、第1の高濃度ピラー領域よりも第2導電型の不純物濃度の低い第2導電型の第1のボディ領域と、第1のSiC領域と第1の面との間に設けられ、第2の高濃度ピラー領域よりも第2導電型の不純物濃度の低い第2導電型の第2のボディ領域と、第1のボディ領域とゲート電極との間、及び、第2のボディ領域とゲート電極との間に設けられ、第1の面を基準とする第2の面側の端部の深さが、第1の面を基準とする第1の高濃度ピラー領域及び第2の高濃度ピラー領域の深さよりも浅いゲート絶縁膜と、第1の高濃度ピラー領域とゲート電極との間に第1の高濃度ピラー領域に接して設けられ、ゲート電極との間に第1のSiC領域を挟み、第1の高濃度ピラー領域よりも第2導電型の不純物濃度の低い第2導電型の第1のサイドピラー領域と、第2の高濃度ピラー領域とゲート電極との間に第2の高濃度ピラー領域に接して設けられ、ゲート電極との間に第1のSiC領域を挟み、第2の高濃度ピラー領域よりも第2導電型の不純物濃度の低い第2導電型の第2のサイドピラー領域と、第1のボディ領域と第1の面との間に設けられた第1導電型の第1のソース領域と、第2のボディ領域と第1の面との間に設けられた第1導電型の第2のソース領域と、を備える。
本実施形態の半導体装置は、第1のサイドピラー領域60aと第2のサイドピラー領域60bとの間の距離が、第1の低濃度ピラー領域28aと第2の低濃度ピラー領域28bとの間の距離が略同一であること以外は、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については記述を省略する。
12 ソース電極
14 ドレイン電極
16 ゲート絶縁膜
18 ゲート電極
22 n+型のドレイン領域(第3のSiC領域)
24 n−型の第1のドリフト領域(第2のSiC領域)
26 n−型の第2のドリフト領域(第1のSiC領域)
28a p−型の第1の低濃度ピラー領域
28b p−型の第2の低濃度ピラー領域
30a p+型の第1の高濃度ピラー領域
30b p+型の第2の高濃度ピラー領域
32a p型の第1のボディ領域
32b p型の第2のボディ領域
34a n+型の第1のソース領域
34b n+型の第2のソース領域
36a p+型の第1のコンタクト領域
36b p+型の第2のコンタクト領域
60a p−型の第1のサイドピラー領域
60b p−型の第2のサイドピラー領域
100 MOSFET(半導体装置)
200 MOSFET(半導体装置)
Claims (7)
- 第1の面と第2の面とを有するSiC層と、
前記SiC層内に設けられた第1導電型の第1のSiC領域と、
前記第1のSiC領域内に設けられた第2導電型の第1の低濃度ピラー領域と、
前記第1のSiC領域内に設けられた第2導電型の第2の低濃度ピラー領域と、
前記第1の低濃度ピラー領域と前記第1の面との間に設けられ、前記第1の低濃度ピラー領域よりも第2導電型の不純物濃度の高い第2導電型の第1の高濃度ピラー領域と、
前記第2の低濃度ピラー領域と前記第1の面との間に設けられ、前記第2の低濃度ピラー領域よりも第2導電型の不純物濃度の高い第2導電型の第2の高濃度ピラー領域と、
少なくとも一部が前記第1の高濃度ピラー領域と前記第2の高濃度ピラー領域との間に設けられたゲート電極と、
前記第1のSiC領域と前記第1の面との間に設けられ、前記第1の高濃度ピラー領域よりも第2導電型の不純物濃度の低い第2導電型の第1のボディ領域と、
前記第1のSiC領域と前記第1の面との間に設けられ、前記第2の高濃度ピラー領域よりも第2導電型の不純物濃度の低い第2導電型の第2のボディ領域と、
前記第1のボディ領域と前記ゲート電極との間、及び、前記第2のボディ領域と前記ゲート電極との間に設けられ、前記第1の面を基準とする前記第2の面側の端部の深さが、前記第1の面を基準とする前記第1の高濃度ピラー領域及び前記第2の高濃度ピラー領域の深さよりも浅いゲート絶縁膜と、
前記第1の高濃度ピラー領域と前記ゲート電極との間に前記第1の高濃度ピラー領域に接して設けられ、前記ゲート電極との間に前記第1のSiC領域を挟み、前記第1の高濃度ピラー領域よりも第2導電型の不純物濃度の低い第2導電型の第1のサイドピラー領域と、
前記第2の高濃度ピラー領域と前記ゲート電極との間に前記第2の高濃度ピラー領域に接して設けられ、前記ゲート電極との間に前記第1のSiC領域を挟み、前記第2の高濃度ピラー領域よりも第2導電型の不純物濃度の低い第2導電型の第2のサイドピラー領域と、
前記第1のボディ領域と前記第1の面との間に設けられた第1導電型の第1のソース領域と、
前記第2のボディ領域と前記第1の面との間に設けられた第1導電型の第2のソース領域と、
を備える半導体装置。 - 前記第1のSiC領域と、前記第2の面との間に、前記第1のSiC領域よりも第1導電型の不純物濃度の低い第1導電型の第2のSiC領域を、更に備える請求項1記載の半導体装置。
- 前記第2のSiC領域と、前記第2の面との間に、前記第1のSiC領域よりも第1導電型の不純物濃度の高い第1導電型の第3のSiC領域を、更に備える請求項2記載の半導体装置。
- 前記第1の面を基準とする前記第1のサイドピラー領域及び前記第2のサイドピラー領域の深さが、前記第1の面を基準とする前記ゲート絶縁膜の前記第2の面側の端部の深さよりも深い請求項1乃至請求項3いずれか一項記載の半導体装置。
- 前記第1のサイドピラー領域と前記第2のサイドピラー領域との間の距離が、前記第1の低濃度ピラー領域と前記第2の低濃度ピラー領域との間の距離よりも短い請求項1乃至請求項4いずれか一項記載の半導体装置。
- 前記第1の高濃度ピラー領域と前記第1の面との間に設けられ、前記第1の高濃度ピラー領域及び前記第1の面に接し、前記第1のボディ領域よりも第2導電型の不純物濃度の高い第2導電型の第1のコンタクト領域と、
前記第2の高濃度ピラー領域と前記第1の面との間に設けられ、前記第2の高濃度ピラー領域及び前記第1の面に接し、前記第2のボディ領域よりも第2導電型の不純物濃度の高い第2導電型の第2のコンタクト領域と、
を更に備える請求項1乃至請求項5いずれか一項記載の半導体装置。 - 前記第1の面に設けられ、前記第1のソース電極、前記第2のソース電極、前記第1の高濃度ピラー領域、及び、前記第2の高濃度ピラー領域に電気的に接続されたソース電極と、
前記第2の面に設けられ前記第1のSiC領域に電気的に接続された第2の電極と、
を更に備える請求項1乃至請求項6いずれか一項記載の半導体装置。
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JP7263178B2 (ja) | 2019-08-02 | 2023-04-24 | 株式会社東芝 | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 |
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