JP2017036493A5 - - Google Patents

Download PDF

Info

Publication number
JP2017036493A5
JP2017036493A5 JP2016135523A JP2016135523A JP2017036493A5 JP 2017036493 A5 JP2017036493 A5 JP 2017036493A5 JP 2016135523 A JP2016135523 A JP 2016135523A JP 2016135523 A JP2016135523 A JP 2016135523A JP 2017036493 A5 JP2017036493 A5 JP 2017036493A5
Authority
JP
Japan
Prior art keywords
gas
valve
channel
gas source
delivery system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016135523A
Other languages
English (en)
Japanese (ja)
Other versions
JP6976043B2 (ja
JP2017036493A (ja
Filing date
Publication date
Priority claimed from US14/805,852 external-priority patent/US9631276B2/en
Application filed filed Critical
Publication of JP2017036493A publication Critical patent/JP2017036493A/ja
Publication of JP2017036493A5 publication Critical patent/JP2017036493A5/ja
Application granted granted Critical
Publication of JP6976043B2 publication Critical patent/JP6976043B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2016135523A 2015-07-15 2016-07-08 原子層堆積中における化学物質の制御された分離および送出により低欠陥処理を可能にするシステムおよび方法 Active JP6976043B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562192844P 2015-07-15 2015-07-15
US62/192,844 2015-07-15
US14/805,852 2015-07-22
US14/805,852 US9631276B2 (en) 2014-11-26 2015-07-22 Systems and methods enabling low defect processing via controlled separation and delivery of chemicals during atomic layer deposition

Publications (3)

Publication Number Publication Date
JP2017036493A JP2017036493A (ja) 2017-02-16
JP2017036493A5 true JP2017036493A5 (enrdf_load_stackoverflow) 2019-08-15
JP6976043B2 JP6976043B2 (ja) 2021-12-01

Family

ID=57843186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016135523A Active JP6976043B2 (ja) 2015-07-15 2016-07-08 原子層堆積中における化学物質の制御された分離および送出により低欠陥処理を可能にするシステムおよび方法

Country Status (5)

Country Link
JP (1) JP6976043B2 (enrdf_load_stackoverflow)
KR (2) KR102620610B1 (enrdf_load_stackoverflow)
CN (1) CN106356285B (enrdf_load_stackoverflow)
SG (1) SG10201605682QA (enrdf_load_stackoverflow)
TW (1) TWI705153B (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6803815B2 (ja) * 2017-07-25 2020-12-23 東京エレクトロン株式会社 基板処理装置、及び、基板処理装置の運用方法
US10529543B2 (en) * 2017-11-15 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Etch process with rotatable shower head
JP6902991B2 (ja) * 2017-12-19 2021-07-14 株式会社日立ハイテク プラズマ処理装置
WO2019195292A1 (en) * 2018-04-03 2019-10-10 Lam Research Corporation Mems coriolis gas flow controller
US11021792B2 (en) * 2018-08-17 2021-06-01 Lam Research Corporation Symmetric precursor delivery
CN113767453B (zh) 2020-04-03 2023-12-12 株式会社日立高新技术 等离子处理装置以及等离子处理方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62136871A (ja) * 1985-12-11 1987-06-19 Canon Inc 光センサ−、その製造方法及びその製造装置
US4660598A (en) * 1986-01-13 1987-04-28 Spraying Systems Co. Diaphragm-type antidrip valve
AU734902B2 (en) * 1996-08-21 2001-06-28 Fisher Controls International Llc Elastomeric element valve
US5939831A (en) * 1996-11-13 1999-08-17 Applied Materials, Inc. Methods and apparatus for pre-stabilized plasma generation for microwave clean applications
US7389792B2 (en) * 1998-12-24 2008-06-24 Nl Technologies, Ltd. Dip tube valve assembly
JP3736322B2 (ja) * 2000-04-26 2006-01-18 昭和電工株式会社 気相成長装置
JP2009267345A (ja) * 2008-04-01 2009-11-12 Hitachi Kokusai Electric Inc 基板処理装置
JP5270476B2 (ja) * 2009-07-07 2013-08-21 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
US8945317B2 (en) * 2011-12-07 2015-02-03 Lam Research Corporation System and method for cleaning gas injectors

Similar Documents

Publication Publication Date Title
JP2017036493A5 (enrdf_load_stackoverflow)
CN110016655B (zh) 用于供应载气和干燥气体的喷淋板结构
TWI626700B (zh) 具有電漿能力之半導體反應室
JP2015015469A5 (enrdf_load_stackoverflow)
TWI654333B (zh) 具有均勻性折流板之半導體基板處理設備
JP6924136B2 (ja) 空間的原子層堆積におけるガス分離制御
TW201505076A (zh) 透過電漿輔助製程處理基板的平面內均勻性的控制方法
JP7203207B2 (ja) ガス吸気システム、原子層堆積装置および方法
JP6302082B2 (ja) Aldコーティングによるガスコンテナ内部の保護
CN102017068B (zh) 具有增加的流动均匀度的狭缝阀
CN103194737B (zh) 一种用于原子层沉积设备的气体分配器
TW201617473A (zh) 二次清洗啟動的原子層沉積系統中噴淋頭背側寄生電漿抑制用方法及設備
TW201600630A (zh) 氣體供給機構及氣體供給方法以及使用其之成膜裝置及成膜方法
CN107365977A (zh) 用于提供均匀气流的设备与方法
TWI606137B (zh) 基板處理設備
JP2016520717A (ja) Aldコーティングによるターゲットポンプ内部の保護
JP2018501405A5 (enrdf_load_stackoverflow)
TWI721149B (zh) 用於晶圓釋氣的電漿增強式退火腔室
TWI699450B (zh) 藉由原子層沉積的保護技術
CN108231632A (zh) 喷头和气体供应系统
JP2011528069A (ja) ガス供給デバイス
JP2010504436A5 (enrdf_load_stackoverflow)
EP2578977A3 (en) Heat treating furnace
KR101366385B1 (ko) 원자층 박막 증착 장치
JP2019518327A5 (enrdf_load_stackoverflow)