JP6803815B2 - 基板処理装置、及び、基板処理装置の運用方法 - Google Patents
基板処理装置、及び、基板処理装置の運用方法 Download PDFInfo
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- JP6803815B2 JP6803815B2 JP2017143697A JP2017143697A JP6803815B2 JP 6803815 B2 JP6803815 B2 JP 6803815B2 JP 2017143697 A JP2017143697 A JP 2017143697A JP 2017143697 A JP2017143697 A JP 2017143697A JP 6803815 B2 JP6803815 B2 JP 6803815B2
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- 239000000758 substrate Substances 0.000 title claims description 129
- 238000012545 processing Methods 0.000 title claims description 97
- 238000000034 method Methods 0.000 title claims description 20
- 239000003507 refrigerant Substances 0.000 claims description 166
- 238000001816 cooling Methods 0.000 claims description 74
- 239000007788 liquid Substances 0.000 claims description 17
- 238000013459 approach Methods 0.000 claims description 16
- 238000001704 evaporation Methods 0.000 claims description 13
- 230000008020 evaporation Effects 0.000 claims description 13
- 230000001105 regulatory effect Effects 0.000 claims description 8
- 238000005259 measurement Methods 0.000 description 11
- 238000002474 experimental method Methods 0.000 description 7
- 230000004043 responsiveness Effects 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 238000007743 anodising Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
Description
θ:0(°)
入熱:1050(W)
流速制御器72(圧縮機)の回転数:0(rpm)
<第2の条件>
θ:5(°)
入熱:1050(W)
流速制御器72(圧縮機)の回転数:0(rpm)
<第3の条件>
θ:0(°)
入熱:1050(W)
流速制御器72(圧縮機)の回転数:1000(rpm)
<第4の条件>
θ:0(°)
入熱:1050(W)
流速制御器72(圧縮機)の回転数:2000(rpm)
<第5の条件>
θ:0(°)
入熱:1050(W)
流速制御器72(圧縮機)の回転数:4000(rpm)
<第6の条件>
θ:0(°)
入熱:0(W)
流速制御器72(圧縮機)の回転数:0(rpm)
Claims (8)
- チャンバ本体と、
前記チャンバ本体の内部空間の中に設けられたステージであり、その上に載置される基板を支持するように構成されており、その内部に冷媒流路が形成された、該ステージと、
圧縮機、凝縮器、第1の膨張弁、及び、蒸発器を含む冷却ループを有し、前記チャンバ本体の外部に設けられた冷却装置と、
前記冷却装置よりも前記チャンバ本体の近くに設けられたローカルループであり、冷媒を貯留するよう構成されたレシーバ、該レシーバと前記冷媒流路との間で接続されており、前記レシーバ内に貯留された前記冷媒の流速を調整して、該冷媒を前記冷媒流路に供給するよう構成された流速制御器、及び、該冷媒流路と前記レシーバとの間に接続された蒸発圧力調整弁を有する、該ローカルループと、
前記冷却ループ内において、前記凝縮器と前記第1の膨張弁との間で接続された第1のバルブと、
前記第1のバルブと前記凝縮器との間で前記冷却ループに接続された一端、及び、前記レシーバに接続された他端を有する供給流路と、
前記供給流路上に設けられた第2のバルブと、
前記供給流路上、且つ、前記第2のバルブと前記レシーバとの間に設けられた第2の膨張弁と、
前記蒸発圧力調整弁の出力側で前記ローカルループに接続された一端、及び、前記第1の膨張弁と前記蒸発器との間で前記冷却ループに接続された他端を有する排出流路と、
を備える基板処理装置。 - 前記ステージは、前記冷媒流路への冷媒の入口、及び、前記冷媒流路からの冷媒の出口を有し、前記出口は前記入口よりも前記ステージの外縁の近くに設けられており、
前記冷媒流路は、前記入口から前記出口に近付くにつれて前記ステージの上面に近付くように傾斜している、
請求項1に記載の基板処理装置。 - 前記出口は、前記冷媒流路内に設けられており、前記冷媒流路内の気体を液体に対して優先的に排出するように、前記冷媒流路を画成する下壁面よりも鉛直方向において高い位置に設けられている、
請求項2に記載の基板処理装置。 - 該基板処理装置は、プラズマ処理装置であり、
前記ステージは、前記冷媒流路が形成された基台、及び、該基台上に設けられた静電チャックを有する、
請求項1〜3の何れか一項に記載の基板処理装置。 - 前記流速制御器は、圧縮機である、請求項1〜4の何れか一項に記載の基板処理装置。
- 前記第1のバルブ及び前記第2のバルブは、一つの三方弁によって提供されている、請求項1〜5の何れか一項に記載の基板処理装置。
- 請求項1〜6の何れか一項に記載の基板処理装置の運用方法であって、
前記冷却装置から前記供給流路を介して前記レシーバに冷媒を供給する工程と、
前記ステージ上に載置された基板が処理されている基板処理期間中に、前記ローカルループ内で冷媒を循環させる工程と、
前記基板処理期間中に、前記冷却ループ内で冷媒を循環させる工程と、
を含み、
前記基板処理期間中の前記冷却装置の前記圧縮機の回転数が、冷媒を供給する前記工程の実行中の前記冷却装置の前記圧縮機の回転数よりも低い回転数に設定される、
基板処理装置の運用方法。 - 前記チャンバ本体の前記内部空間と該チャンバ本体の外部との間で基板が搬送されている期間中に、冷媒を供給する前記工程が実行される、請求項7に記載の基板処理装置の運用方法。
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JP2017143697A JP6803815B2 (ja) | 2017-07-25 | 2017-07-25 | 基板処理装置、及び、基板処理装置の運用方法 |
KR1020180085549A KR102476883B1 (ko) | 2017-07-25 | 2018-07-23 | 기판 처리 장치 및 기판 처리 장치의 운용 방법 |
US16/043,267 US10804082B2 (en) | 2017-07-25 | 2018-07-24 | Substrate processing apparatus, and operation method for substrate processing apparatus |
CN201810824452.XA CN109300763B (zh) | 2017-07-25 | 2018-07-25 | 基片处理装置和基片处理装置的运用方法 |
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US11437261B2 (en) | 2018-12-11 | 2022-09-06 | Applied Materials, Inc. | Cryogenic electrostatic chuck |
US11764041B2 (en) | 2019-06-14 | 2023-09-19 | Applied Materials, Inc. | Adjustable thermal break in a substrate support |
US11373893B2 (en) | 2019-09-16 | 2022-06-28 | Applied Materials, Inc. | Cryogenic electrostatic chuck |
JP7374026B2 (ja) * | 2020-03-11 | 2023-11-06 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理装置の製造方法 |
US11646183B2 (en) | 2020-03-20 | 2023-05-09 | Applied Materials, Inc. | Substrate support assembly with arc resistant coolant conduit |
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JP2002168551A (ja) * | 2000-11-30 | 2002-06-14 | Tokyo Electron Ltd | 処理装置の電極用冷却装置 |
JP2002174466A (ja) * | 2000-12-06 | 2002-06-21 | Smc Corp | チャックプレート冷却装置 |
US20070091541A1 (en) * | 2005-10-20 | 2007-04-26 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor using feed forward thermal control |
JP2007271183A (ja) * | 2006-03-31 | 2007-10-18 | Toyota Industries Corp | 冷却装置 |
JP4815295B2 (ja) * | 2006-07-26 | 2011-11-16 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
CN201449093U (zh) * | 2006-12-25 | 2010-05-05 | 株式会社生方制作所 | 冷冻循环用的检测器 |
JP4838197B2 (ja) * | 2007-06-05 | 2011-12-14 | 東京エレクトロン株式会社 | プラズマ処理装置,電極温度調整装置,電極温度調整方法 |
JP5185790B2 (ja) * | 2008-11-27 | 2013-04-17 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US8453468B1 (en) * | 2009-03-18 | 2013-06-04 | Be Aerospace, Inc. | System and method for thermal control of different heat loads from a single source of saturated fluids |
JP5401286B2 (ja) | 2009-12-04 | 2014-01-29 | 株式会社日立ハイテクノロジーズ | 試料台の温度制御機能を備えた真空処理装置及びプラズマ処理装置 |
JP5822578B2 (ja) * | 2011-07-20 | 2015-11-24 | 東京エレクトロン株式会社 | 載置台温度制御装置及び基板処理装置 |
JP5416748B2 (ja) | 2011-10-11 | 2014-02-12 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP5938716B2 (ja) * | 2013-11-01 | 2016-06-22 | パナソニックIpマネジメント株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP6976043B2 (ja) * | 2015-07-15 | 2021-12-01 | ラム リサーチ コーポレーションLam Research Corporation | 原子層堆積中における化学物質の制御された分離および送出により低欠陥処理を可能にするシステムおよび方法 |
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CN109300763B (zh) | 2020-10-16 |
US20190035609A1 (en) | 2019-01-31 |
JP2019029373A (ja) | 2019-02-21 |
CN109300763A (zh) | 2019-02-01 |
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US10804082B2 (en) | 2020-10-13 |
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