JP2011528069A - ガス供給デバイス - Google Patents
ガス供給デバイス Download PDFInfo
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- JP2011528069A JP2011528069A JP2011517988A JP2011517988A JP2011528069A JP 2011528069 A JP2011528069 A JP 2011528069A JP 2011517988 A JP2011517988 A JP 2011517988A JP 2011517988 A JP2011517988 A JP 2011517988A JP 2011528069 A JP2011528069 A JP 2011528069A
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- JP
- Japan
- Prior art keywords
- gas
- supply device
- chamber
- gas supply
- processing
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45538—Plasma being used continuously during the ALD cycle
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
処理ゾーンに処理ガスを供給するための第1の概して細長い注入器と、
処理ゾーンの周囲にある第1の排出ゾーンと、
処理ゾーンを包囲する出口において、パージガス又は不活性ガスを供給するための、第1の排出ガスの周囲にあるさらなる注入器であって、少なくとも1つの部分ガスシール部を画定するための出口の周囲にある基板位置に対面する壁を有するさらなる注入器と、
を含む、
デバイスから構成される。
少なくとも1つのガス注入器と、
上記記載で画定されたような少なくとも1つのガス供給デバイスと、
を有する処理チャンバと、
基板を、処理チャンバの周りに、かつガス供給デバイスの処理領域を通って移動させるための回転可能支持体と、
を含む基板上に層を形成するための低圧原子層堆積装置から構成される。
Claims (19)
- 基板位置での低圧原子層堆積に使用するためのガス供給デバイスであって、
処理ゾーンに処理ガスを供給するための第1の概して細長い注入器と、
処理ゾーンの周囲にある第1の排出ゾーンと、
処理ゾーンを包囲する出口において、パージガス又は不活性ガスを供給するための、第1の排出ガスの周囲にあるさらなる注入器であって、少なくとも1つの部分ガスシール部を画定するための出口の周囲にある基板位置に対面する壁を有するさらなる注入器と、
を含む、
デバイス。 - 内部及び外部のパージガス注入器によって画定され、かつさらなる排出領域内部に画定される活性領域(プラズマ/UV又は熱線の励起作用)が存在する、
請求項1に記載のデバイス。 - 処理領域が、典型的には高さ10mm〜40mmである、
請求項1又は2に記載のデバイス。 - さらに、さらなる注入器の周囲にあるさらなるガス排出領域を含む、
請求項1〜4のいずれか1項に記載のデバイス。 - ガス供給デバイスであって、
処理チャンバ内に置くことができ、かつ、
ガス処理領域を画定するように、その周囲全体の周りにガスシール部を有する
ガス供給デバイス。 - 基板上に層を形成するための低圧原子層堆積装置であって、
少なくとも1つのガス注入器と、
請求項1〜5のいずれか1項に記載の少なくとも1つのガス供給デバイスと、
を有する処理チャンバと、
基板を、処理チャンバの周りに、かつガス供給デバイスの処理領域を通って移動させるための回転可能支持体と、
を含む、
装置。 - さらに、ガス供給デバイスを作動状態又は非作動状態にするための制御機構を含み、それにより、基板が、基板上で行われるべき処理に応じて、チャンバ内において単独で、又はガス供給デバイスから処理チャンバに順次に、若しくは逆もまた同様に、処理されることができる、
請求項6に記載の装置。 - 少なくとも部分的に、幅約1.5mm〜約3mmの通路によって構成される部分ガスシール部により、反応ゾーン同士の間で10,000ppm未満の閉じ込め作用をもたらす、
請求項5〜7のいずれか1項に記載の装置。 - 部分ガスシール部が、少なくとも部分的に、長さ約30mm〜約100mmの通路によって構成される、
請求項5〜7のいずれか1項に記載の装置。 - 通路が、
長さ約60mm〜約100mmであり、
幅約15mm〜3mmである、
請求項9に記載の装置。 - 部分ガスシール部が、反応ゾーン同士の間で10,000ppm未満の閉じ込め作用をもたらす、
請求項5〜7のいずれか1項に記載の装置。 - 前記処理領域での圧力が、前記チャンバ内の圧力の約±50%の範囲を出ない、
請求項5〜10のいずれか1項に記載の装置。 - さらなる注入器でのガスの速度が、少なくとも約50m/sである、
請求項5〜11のいずれか1項に記載の装置。 - 処理チャンバから分離処理領域を画定するための全周シール作用を有するガス供給デバイスと、処理チャンバの周りにかつ処理領域を通って基板を移動させるための回転可能支持体とを含む処理チャンバ内において、原子層堆積を行う方法であって、
基板が、この方法の少なくとも一部の間に、チャンバ及び処理領域内の両方において処理される、
方法。 - ガス供給デバイスが、支持体の1回転又はそれ以上の回転の間に停止される、
請求項7に記載の方法。 - 処理ガスが、処理チャンバに供給される、
請求項14に記載の方法。 - プラズマ/UV又は熱線の励起によって励起された処理ガスが、処理チャンバに供給される、
請求項14に記載の方法。 - 処理チャンバが、プラズマ、UV又は熱線の励起源を含む、
請求項14〜16のいずれか1項に記載の方法。 - パージガスが、処理チャンバに供給される、
請求項14〜17のいずれか1項に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8146308P | 2008-07-17 | 2008-07-17 | |
US61/081,463 | 2008-07-17 | ||
GBGB0816186.1A GB0816186D0 (en) | 2008-09-05 | 2008-09-05 | Gas delivery device |
GB0816186.1 | 2008-09-05 | ||
PCT/GB2009/001731 WO2010007356A2 (en) | 2008-07-17 | 2009-07-13 | Gas delivery device |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2011528069A true JP2011528069A (ja) | 2011-11-10 |
Family
ID=39888820
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011517988A Pending JP2011528069A (ja) | 2008-07-17 | 2009-07-13 | ガス供給デバイス |
Country Status (7)
Country | Link |
---|---|
US (1) | US20110268891A1 (ja) |
EP (1) | EP2310552A2 (ja) |
JP (1) | JP2011528069A (ja) |
KR (1) | KR20110041488A (ja) |
CN (1) | CN102203316A (ja) |
GB (1) | GB0816186D0 (ja) |
WO (1) | WO2010007356A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015209557A (ja) * | 2014-04-24 | 2015-11-24 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体 |
JP2017092454A (ja) * | 2015-09-28 | 2017-05-25 | ウルトラテック インク | 高スループットの複数チャンバ原子層堆積システムおよび方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL2007114C2 (en) * | 2011-07-14 | 2013-01-15 | Levitech B V | Floating substrate monitoring and control device, and method for the same. |
KR20140144243A (ko) * | 2012-03-23 | 2014-12-18 | 피코순 오와이 | 원자층 증착 방법 및 장치 |
JP6134191B2 (ja) * | 2013-04-07 | 2017-05-24 | 村川 惠美 | 回転型セミバッチald装置 |
FI126315B (en) * | 2014-07-07 | 2016-09-30 | Beneq Oy | A nozzle head, apparatus and method for subjecting a substrate surface to successive surface reactions |
FI130052B (fi) * | 2020-10-12 | 2023-01-13 | Beneq Oy | Atomikerroskasvatuslaitteisto |
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US20050084610A1 (en) * | 2002-08-13 | 2005-04-21 | Selitser Simon I. | Atmospheric pressure molecular layer CVD |
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US8398770B2 (en) * | 2007-09-26 | 2013-03-19 | Eastman Kodak Company | Deposition system for thin film formation |
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US20090324826A1 (en) * | 2008-06-27 | 2009-12-31 | Hitoshi Kato | Film Deposition Apparatus, Film Deposition Method, and Computer Readable Storage Medium |
US8470718B2 (en) * | 2008-08-13 | 2013-06-25 | Synos Technology, Inc. | Vapor deposition reactor for forming thin film |
-
2008
- 2008-09-05 GB GBGB0816186.1A patent/GB0816186D0/en not_active Ceased
-
2009
- 2009-07-13 KR KR1020117001874A patent/KR20110041488A/ko not_active Application Discontinuation
- 2009-07-13 EP EP09784690A patent/EP2310552A2/en not_active Withdrawn
- 2009-07-13 WO PCT/GB2009/001731 patent/WO2010007356A2/en active Application Filing
- 2009-07-13 US US13/054,033 patent/US20110268891A1/en not_active Abandoned
- 2009-07-13 CN CN2009801279122A patent/CN102203316A/zh active Pending
- 2009-07-13 JP JP2011517988A patent/JP2011528069A/ja active Pending
Patent Citations (3)
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JP2001510242A (ja) * | 1997-07-14 | 2001-07-31 | シリコン ヴァレイ グループ サーマル システムズ リミテッド ライアビリティ カンパニー | 単一ボデー噴射器及び蒸着室 |
US20040058293A1 (en) * | 2002-08-06 | 2004-03-25 | Tue Nguyen | Assembly line processing system |
DE102004015216A1 (de) * | 2004-03-23 | 2005-10-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Modul und Verfahren für die Modifizierung von Substratoberflächen bei Atmosphärenbedingungen |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015209557A (ja) * | 2014-04-24 | 2015-11-24 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体 |
JP2017092454A (ja) * | 2015-09-28 | 2017-05-25 | ウルトラテック インク | 高スループットの複数チャンバ原子層堆積システムおよび方法 |
Also Published As
Publication number | Publication date |
---|---|
GB0816186D0 (en) | 2008-10-15 |
EP2310552A2 (en) | 2011-04-20 |
KR20110041488A (ko) | 2011-04-21 |
CN102203316A (zh) | 2011-09-28 |
WO2010007356A3 (en) | 2011-02-24 |
WO2010007356A2 (en) | 2010-01-21 |
US20110268891A1 (en) | 2011-11-03 |
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