JP6412466B2 - 基板処理装置及び基板処理方法 - Google Patents
基板処理装置及び基板処理方法 Download PDFInfo
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- JP6412466B2 JP6412466B2 JP2015111907A JP2015111907A JP6412466B2 JP 6412466 B2 JP6412466 B2 JP 6412466B2 JP 2015111907 A JP2015111907 A JP 2015111907A JP 2015111907 A JP2015111907 A JP 2015111907A JP 6412466 B2 JP6412466 B2 JP 6412466B2
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- etching
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- substrate processing
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- 239000000758 substrate Substances 0.000 title claims description 139
- 238000012545 processing Methods 0.000 title claims description 115
- 238000003672 processing method Methods 0.000 title claims description 28
- 239000007789 gas Substances 0.000 claims description 239
- 238000005530 etching Methods 0.000 claims description 195
- 230000002093 peripheral effect Effects 0.000 claims description 83
- 238000000034 method Methods 0.000 claims description 48
- 230000008569 process Effects 0.000 claims description 46
- 238000000926 separation method Methods 0.000 claims description 44
- 239000012495 reaction gas Substances 0.000 claims description 39
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 230000007423 decrease Effects 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 13
- 239000007795 chemical reaction product Substances 0.000 claims description 9
- 238000010926 purge Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims 3
- 238000001020 plasma etching Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 48
- 229910004298 SiO 2 Inorganic materials 0.000 description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 18
- 239000001257 hydrogen Substances 0.000 description 18
- 229910052739 hydrogen Inorganic materials 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 14
- 230000001590 oxidative effect Effects 0.000 description 14
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 13
- 229910052731 fluorine Inorganic materials 0.000 description 13
- 239000011737 fluorine Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 238000009826 distribution Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
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- 239000010453 quartz Substances 0.000 description 4
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- 238000002156 mixing Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
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- 238000012986 modification Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
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- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 230000006870 function Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description
該処理容器内に設けられ、周方向に沿って表面に形成された基板載置領域を有する回転テーブルと、
該回転テーブルの前記周方向に沿った所定領域に設けられたエッチング領域と、
該エッチング領域に前記回転テーブルに対向するように設けられ、前記回転テーブルの半径方向に延在して配置されたガス吐出孔を有するエッチングガス供給部と、
該エッチングガス供給部の下面の前記回転テーブルの半径方向の外周側に、前記回転テーブルの上面又は外周側面に平行に対向する平坦面をなして設けられた突出部材と、を有する。
前記エッチングガス供給部の下面の前記回転テーブルの半径方向の外周側に、前記回転テーブルの上面又は外周側面に平行に対向する平坦面をなす突出部材を設け、前記エッチング領域の外周側の圧力の低下を防止しながら、前記基板をエッチング処理する。
(基板処理装置)
本発明の第1の実施形態に係る基板処理装置について説明する。図1は、本発明の第1の実施形態に係る基板処理装置の概略断面図である。図2は、本発明の第1の実施形態に係る基板処理装置の概略平面図である。図3は、本発明の第1の実施形態に係る基板処理装置における分離領域を説明するための一部断面図である。図4は、本発明の第1の実施形態に係る基板処理装置の他の断面を示す一部断面図である。
本発明の第1の実施形態に係る基板処理装置を用いた基板処理方法の一例について説明する。以下では、ウエハW上に形成された凹形状パターンの1つであるビア内にSiO2膜を形成する方法を例として説明する。なお、第1の反応ガスとしてSi含有ガス、第2の反応ガスとして酸化ガス、フッ素含有ガスとしてCF4とArガスとO2ガスとの混合ガス(以下「CF4/Ar/O2ガス」という。)を用いる場合を例として説明する。
図7は、本発明の第2の実施形態に係る基板処理装置の一例を示した図である。第2の実施形態に係る基板処理装置は、エッチング領域P3内のシャワーヘッド部93の構成が第1の実施形態に係る基板処理装置と異なっているが、その他の構成要素については、第1の実施形態に係る基板処理装置と同様であるので、異なる点についてのみ説明する。また、第1の実施形態に係る基板処理装置と同様の構成要素については同一の参照符号を付し、その説明を簡略化又は省略する。
第3の実施形態に係る基板処理装置では、エッチング領域P3内における外周側の温度の低下を防ぐことにより、エッチング反応エネルギーの低下を防止する例について説明する。エッチング反応エネルギーの低下の防止は、エッチング領域内における圧力の低下を防止するだけでなく、温度の低下を防止することによっても達成することができる。
図10は、本発明の第4の実施形態に係る基板処理装置の一例を示した図である。図10に示されるように、第4の実施形態に係る基板処理装置は、エッチング領域P3における回転テーブル2の外側の箇所に側壁部111を備え、側壁部111の内部に形成された収納空間112内にヒータ113が設けられた構成を有する。
次に、本発明の実施形態に係る基板処理装置及び基板処理方法を実施した実施例を、比較例とともに説明する。なお、説明の便宜のため、今まで説明した構成要素と同様の構成要素には、今までと同一の参照符号を付すものとする。
図11は、シャワーヘッド部93のガス吐出孔93aの孔分布を変更してエッチング量を測定した実験及びその結果を示した図である。
図12は、比較例2に係る基板処理装置のシャワーヘッド部93の下方の圧力分布シミュレーション結果を示した図である。比較例2に係る基板処理装置は、エッチング領域P3の外周部のエッチング反応エネルギーの低下を防止する対策を何ら施さない基板処理装置である。
図13は、実施例1に係る基板処理装置のシャワーヘッド部93の可能の圧力分布シミュレーション結果を示した図である。実施例1に係る基板処理装置は、実施形態1に係る基板処理装置と同様の構成を有し、シャーヘッド部93の下面93bと回転テーブル2との間隔d1を4mm、シャワーヘッド部93の外周側に設けられた下方突出面93cと回転テーブル2との間の狭間隔d2を2mmに設定した基板処理装置である。
図14は、比較例2に係る基板処理装置のエッチングレートの圧力依存性を示した図である。図14に示されるように、圧力が1Torrの時は、エッチングレートが最も低く、1.5Torr、1.8Torr、2.0Torr、3.0Torr、4.0Torrと圧力を増加させることにより、エッチングレートを全体的に増加せることができることが分かる。
2 回転テーブル
11 天板
12 容器本体
24 凹部
31、32 反応ガスノズル
41、42 分離ガスノズル
90 エッチングガス供給部
93 シャワーヘッド部
93a ガス吐出孔
93b 下面
93c 下方突出面
93d 下方突出部
93e、112 収納空間
110、113 ヒータ
111 側壁部
D 分離領域
P1、P2、P2 処理領域
W ウエハ
Claims (20)
- 処理容器と、
該処理容器内に設けられ、周方向に沿って表面に形成された基板載置領域を有する回転テーブルと、
該回転テーブルの前記周方向に沿った所定領域に設けられたエッチング領域と、
該エッチング領域に前記回転テーブルに対向するように設けられ、前記回転テーブルの半径方向に延在して配置されたガス吐出孔を有するエッチングガス供給部と、
該エッチングガス供給部の下面の前記回転テーブルの半径方向の外周側に、前記回転テーブルの上面又は外周側面に平行に対向する平坦面をなして設けられた突出部材と、を有する基板処理装置。 - 前記突出部材は、前記エッチング領域内の前記基板載置領域よりも外側に、前記エッチングガス供給部と前記回転テーブルとの間に形成される第1の間隔よりも狭い第2の間隔を前記回転テーブルの上面又は外周側面との間に形成する狭間隔形成手段である請求項1に記載の基板処理装置。
- 前記第2の間隔は、前記回転テーブルの前記上面と、前記突出部材の下面との間に形成される請求項2に記載の基板処理装置。
- 前記突出部材は、前記エッチングガス供給部の下面の外周部に沿って帯状に設けられた下方突出面を形成する請求項3に記載の基板処理装置。
- 前記突出部材は、エッチングガス供給部の外周部の前記回転テーブルからはみ出す領域に形成され、前記回転テーブルの外側面を側方から覆い、
前記第2の間隔は、前記回転テーブルの外周側面と、前記突出部材の内側面との間に形成される請求項2に記載の基板処理装置。 - 処理容器と、
該処理容器内に設けられ、周方向に沿って表面に形成された基板載置領域を有する回転テーブルと、
該回転テーブルの前記周方向に沿った所定領域に設けられたエッチング領域と、
該エッチング領域に前記回転テーブルに対向するように設けられ、前記回転テーブルの半径方向に延在して配置されたガス吐出孔を有するエッチングガス供給部と、
該エッチングガス供給部の下面の前記回転テーブルの半径方向の外周側に、前記回転テーブルの上面に平行に対向して設けられた加熱手段と、を有する基板処理装置。 - 処理容器と、
該処理容器内に設けられ、周方向に沿って表面に形成された基板載置領域を有する回転テーブルと、
該回転テーブルの前記周方向に沿った所定領域に設けられたエッチング領域と、
該エッチング領域に前記回転テーブルに対向するように設けられ、前記回転テーブルの半径方向に延在して配置されたガス吐出孔を有するエッチングガス供給部と、
前記回転テーブルの外周側面よりも外側に、前記回転テーブルの外周側面に対向して設けられた加熱手段と、を有する基板処理装置。 - 前記加熱手段は、前記回転テーブルの外周側面よりも外側の位置に立設して設けられた請求項7に記載の基板処理装置。
- 前記エッチングガス供給部は、扇形のシャワーヘッドである請求項1乃至8のいずれか一項に記載の基板処理装置。
- 前記エッチングガス供給部にプラズマエッチングガスを供給するプラズマ源を有する請求項1乃至9のいずれか一項に記載の基板処理装置。
- 前記回転テーブルの前記周方向に沿った前記エッチング領域と離間した所定領域に、成膜領域を更に有する請求項1乃至10のいずれか一項に記載の基板処理装置。
- 前記成膜領域は、前記回転テーブルに原料ガスを供給する原料ガス供給領域と、該原料ガス供給領域と前記回転テーブルの前記周方向において離間して設けられ、該原料ガスと反応して反応生成物を生成可能な反応ガスを供給する反応ガス供給領域と、を有する請求項11に記載の基板処理装置。
- 前記原料ガス供給領域と前記反応ガス供給領域との間には、パージガスを供給する分離領域が設けられた請求項12に記載の基板処理装置。
- 処理容器内に設けられた回転テーブルの周方向に沿って所定の基板載置領域上に基板を載置し、前記回転テーブルを回転させることにより、前記回転テーブルに対向するように設けられ、前記回転テーブルの半径方向に延在して配置されたガス吐出孔を有するエッチングガス供給部を有するとともに、前記基板に前記回転テーブルの前記周方向における所定領域に設けられたエッチング領域を通過させ、前記基板をエッチング処理する基板処理方法であって、
前記エッチングガス供給部の下面の前記回転テーブルの半径方向の外周側に、前記回転テーブルの上面又は外周側面に平行に対向する平坦面をなす突出部材を設け、前記エッチング領域の外周側の圧力の低下を防止しながら、前記基板をエッチング処理する工程を有する基板処理方法。 - 前記突出部材は、前記回転テーブルの外周部の上面に対向している請求項14に記載の基板処理方法。
- 前記突出部材は、前記回転テーブルの外周側面に対向している請求項15に記載の基板処理方法。
- 処理容器内に設けられた回転テーブルの周方向に沿って所定の基板載置領域上に基板を載置し、前記回転テーブルを回転させることにより、前記回転テーブルに対向するように設けられ、前記回転テーブルの半径方向に延在して配置されたガス吐出孔を有するエッチングガス供給部を有するとともに、前記基板に前記回転テーブルの前記周方向における所定領域に設けられたエッチング領域を通過させ、前記基板をエッチング処理する基板処理方法であって、
前記エッチングガス供給部の下面の前記回転テーブルの半径方向の外周側に、前記回転テーブルの上面又は外周側面に平行に対向して加熱手段を設け、前記エッチング領域の外周側の温度の低下を防止しながら、前記基板をエッチング処理する工程を有する基板処理方法。 - 前記加熱手段は、前記回転テーブルの外周側面よりも外側の位置に立設して設けられ、前記回転テーブルの外周側面よりも外側から前記エッチング領域の外周側の温度の低下を防止する請求項17に記載の基板処理方法。
- 前記基板に、前記回転テーブルの前記周方向において前記エッチング領域と離間した所定領域に設けられた成膜領域を通過させ、前記基板に成膜処理を施す工程を更に有し、
前記基板をエッチング処理する工程は、前記基板に成膜処理を施す工程により前記基板上に堆積された膜をエッチングする工程を含む請求項14乃至18のいずれか一項に基板処理方法。 - 前記成膜処理を施す工程は、前記基板に原料ガスを供給する工程と、
前記基板に、前記原料ガスと反応可能な反応ガスを供給し、前記基板上に前記原料ガスと前記反応ガスとの反応生成物を堆積させる工程と、を含む請求項19に記載の基板処理方法。
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