JP2017036441A - ブロックコポリマー及び関連フォトレジスト組成物ならびに電子デバイスの形成方法 - Google Patents
ブロックコポリマー及び関連フォトレジスト組成物ならびに電子デバイスの形成方法 Download PDFInfo
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- ZNJXRXXJPIFFAO-UHFFFAOYSA-N CC(C(OCC(C(C(C(F)F)(F)F)(F)F)(F)F)=O)=C Chemical compound CC(C(OCC(C(C(C(F)F)(F)F)(F)F)(F)F)=O)=C ZNJXRXXJPIFFAO-UHFFFAOYSA-N 0.000 description 1
- QTKPMCIBUROOGY-UHFFFAOYSA-N CC(C(OCC(F)(F)F)=O)=C Chemical compound CC(C(OCC(F)(F)F)=O)=C QTKPMCIBUROOGY-UHFFFAOYSA-N 0.000 description 1
- DSESELHEBRQXBA-UHFFFAOYSA-N CC(C(OCc(c(F)c(c(F)c1F)F)c1F)=O)=C Chemical compound CC(C(OCc(c(F)c(c(F)c1F)F)c1F)=O)=C DSESELHEBRQXBA-UHFFFAOYSA-N 0.000 description 1
- GPKNGJJISSVRDM-UHFFFAOYSA-N CC(C)(C)C(OCC(C(F)F)(F)F)=O Chemical compound CC(C)(C)C(OCC(C(F)F)(F)F)=O GPKNGJJISSVRDM-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】塩基溶解度向上モノマー及びフッ素置換エステル基を排除する帯域外吸収性モノマー由来の単位を有する第1のブロックと、少なくとも1個のFを含むフッ素化(メタ)アクリル酸エステル由来の繰り返し単位を含み、15〜34mJ/m2の低表面エネルギーを有する第2のブロックと、を含むブロックコポリマー。流涎されたフィルムが150〜400nmの波長で0.1〜0.5の消衰係数kを有する、ブロックコポリマー。帯域外吸収性モノマーが下記式で表される構造を有するブロックコポリマー。
【選択図】図1
Description
Claims (14)
- フッ素置換エステル基を排除する帯域外吸収性モノマー、及び
塩基溶解度向上モノマー由来の繰り返し単位を有する第1のブロックと、
1平方メートル当たり15〜34ミリジュールの表面エネルギーを有する第2のブロックと、を含むブロックコポリマーであって、
前記ブロックコポリマーから流涎されたフィルムが、150〜400ナノメートルの範囲の波長で0.1〜0.5の消衰係数kを有する、前記ブロックコポリマー。 - 1.05〜1.2の分散度(Mw/Mn)を有する、請求項1に記載の前記ブロックコポリマー。
- 前記帯域外吸収性モノマーが、フッ素を含まない非置換もしくは置換C6−C18アリール基、非置換もしくは置換C2−C17ヘテロアリール基、C5−C12ジエノン基、またはそれらの組み合わせを含む、請求項1または2に記載の前記ブロックコポリマー。
- 前記塩基溶解度向上モノマーが、酸不安定(メタ)アクリル酸エステル、塩基不安定(メタ)アクリル酸エステル、2〜12のpKaを有する基で置換された(メタ)アクリル酸エステル、及びそれらの組み合わせからなる群から選択される、請求項1〜4のいずれか一項に記載の前記ブロックコポリマー。
- 前記塩基溶解度向上モノマーが、第三級(メタ)アクリル酸エステルを含む、請求項1〜5のいずれか一項に記載の前記ブロックコポリマー。
- 前記第2のブロックが、
ビニル、アリル、ノルボルネニル、(メタ)アクリロイル、ジアルコール、ジカルボン酸、ジエステル、ジイソシアン酸塩、イソシアン酸塩とアルコールとの組み合わせ、シリル(ジクロロ)(ヒドロカルビル)、ジアセチレン、グリシジル、及びヒドロキシフェニルからなる群から選択される重合性部分と、
C10−C36アルキル、C2−C12ジアルキルシロキサン、及びC1−C12フッ素化アルキルからなる群から選択される低表面エネルギー部分と、を含むモノマーの重合生成物である、請求項1〜6のいずれか一項に記載の前記ブロックコポリマー。 - 前記第1のブロックが、光酸発生モノマー由来の繰り返し単位をさらに含む、請求項1〜8のいずれか一項に記載の前記ブロックコポリマー。
- 請求項1〜9のいずれか一項に記載の前記ブロックコポリマーを含む、フォトレジスト組成物。
- 光酸発生剤をさらに含む、請求項10に記載の前記フォトレジスト組成物。
- C1−30アミン、C1−30アミド、及びそれらの組み合わせからなる群から選択される消光剤をさらに含む、請求項10または11に記載の前記フォトレジスト組成物。
- 請求項10に記載の前記フォトレジスト組成物を含むフィルムであって、前記フィルムが、50〜200ナノメートルの厚みを有し、前記フィルムが、空気と接触する上面を備え、前記フィルム中の前記ブロックコポリマーの少なくとも50重量パーセントが、前記上面の20ナノメートル以内に存在する、前記フィルム。
- 電子デバイスの形成方法であって、
(a)請求項10に記載のフォトレジスト組成物の層を基材上に適用することと、
(b)前記フォトレジスト組成物層を電子ビームまたは極端紫外線放射線にパターン状に露光することと、
(c)前記露光されたフォトレジスト組成物層を現像して、レジストレリーフ画像を提供することと、を含む、前記方法。
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