JP2017034218A5 - - Google Patents

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Publication number
JP2017034218A5
JP2017034218A5 JP2015237219A JP2015237219A JP2017034218A5 JP 2017034218 A5 JP2017034218 A5 JP 2017034218A5 JP 2015237219 A JP2015237219 A JP 2015237219A JP 2015237219 A JP2015237219 A JP 2015237219A JP 2017034218 A5 JP2017034218 A5 JP 2017034218A5
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JP
Japan
Prior art keywords
semiconductor light
electrode
light emitting
emitting device
resin layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2015237219A
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English (en)
Japanese (ja)
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JP2017034218A (ja
Filing date
Publication date
Application filed filed Critical
Priority to US15/060,550 priority Critical patent/US10141482B2/en
Priority to TW105107256A priority patent/TWI663751B/zh
Priority to CN201610140817.8A priority patent/CN106410020B/zh
Publication of JP2017034218A publication Critical patent/JP2017034218A/ja
Publication of JP2017034218A5 publication Critical patent/JP2017034218A5/ja
Ceased legal-status Critical Current

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JP2015237219A 2015-08-03 2015-12-04 半導体発光装置 Ceased JP2017034218A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US15/060,550 US10141482B2 (en) 2015-08-03 2016-03-03 Semiconductor light emitting device
TW105107256A TWI663751B (zh) 2015-08-03 2016-03-09 半導體發光裝置
CN201610140817.8A CN106410020B (zh) 2015-08-03 2016-03-11 半导体发光装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015153665 2015-08-03
JP2015153665 2015-08-03

Publications (2)

Publication Number Publication Date
JP2017034218A JP2017034218A (ja) 2017-02-09
JP2017034218A5 true JP2017034218A5 (enExample) 2019-01-31

Family

ID=57988939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015237219A Ceased JP2017034218A (ja) 2015-08-03 2015-12-04 半導体発光装置

Country Status (4)

Country Link
US (1) US10141482B2 (enExample)
JP (1) JP2017034218A (enExample)
CN (1) CN106410020B (enExample)
TW (1) TWI663751B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10193031B2 (en) * 2016-03-11 2019-01-29 Rohinni, LLC Method for applying phosphor to light emitting diodes and apparatus thereof
DE102016112275B4 (de) * 2016-07-05 2022-10-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum herstellen einer optoelektronischen leuchtvorrichtung und optoelektronische leuchtvorrichtung
JP6665872B2 (ja) 2018-01-15 2020-03-13 日亜化学工業株式会社 発光装置及び発光装置の製造方法
JP6760324B2 (ja) * 2018-03-27 2020-09-23 日亜化学工業株式会社 発光装置
US10974226B2 (en) * 2018-09-24 2021-04-13 Sabic Global Technologies B.V. Catalytic process for oxidative coupling of methane
WO2021002158A1 (ja) * 2019-07-04 2021-01-07 日亜化学工業株式会社 発光装置の製造方法及び発光モジュールの製造方法、並びに、発光装置及び発光モジュール
CN111628066A (zh) * 2020-06-04 2020-09-04 江西鸿利光电有限公司 一种提升led发光亮度的工艺方法
TWM613115U (zh) * 2021-01-20 2021-06-11 長華科技股份有限公司 複合式導線架及高亮度發光二極體的封裝結構
JP7381903B2 (ja) * 2021-03-31 2023-11-16 日亜化学工業株式会社 発光装置

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6514782B1 (en) * 1999-12-22 2003-02-04 Lumileds Lighting, U.S., Llc Method of making a III-nitride light-emitting device with increased light generating capability
US6650044B1 (en) 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
JP2002314143A (ja) * 2001-04-09 2002-10-25 Toshiba Corp 発光装置
JP3707688B2 (ja) 2002-05-31 2005-10-19 スタンレー電気株式会社 発光装置およびその製造方法
JP3655267B2 (ja) * 2002-07-17 2005-06-02 株式会社東芝 半導体発光装置
DE102004034166B4 (de) 2003-07-17 2015-08-20 Toyoda Gosei Co., Ltd. Lichtemittierende Vorrichtung
JP4857596B2 (ja) * 2004-06-24 2012-01-18 豊田合成株式会社 発光素子の製造方法
US7259402B2 (en) 2004-09-22 2007-08-21 Cree, Inc. High efficiency group III nitride-silicon carbide light emitting diode
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
JP2007194525A (ja) 2006-01-23 2007-08-02 Matsushita Electric Ind Co Ltd 半導体発光装置
JP4953846B2 (ja) 2007-02-06 2012-06-13 スタンレー電気株式会社 発光装置およびその製造方法
US8159131B2 (en) 2008-06-30 2012-04-17 Bridgelux, Inc. Light emitting device having a transparent thermally conductive layer
KR20100080423A (ko) * 2008-12-30 2010-07-08 삼성엘이디 주식회사 발광소자 패키지 및 그 제조방법
JPWO2010123052A1 (ja) * 2009-04-22 2012-10-25 シーシーエス株式会社 発光装置
JP2011035198A (ja) 2009-08-03 2011-02-17 Ccs Inc Ｌｅｄ発光デバイスの製造方法
JP2011066047A (ja) * 2009-09-15 2011-03-31 Sharp Corp 窒化物半導体発光素子
KR101055095B1 (ko) 2010-03-09 2011-08-08 엘지이노텍 주식회사 발광장치
JP5701523B2 (ja) * 2010-06-22 2015-04-15 日東電工株式会社 半導体発光装置
US8308982B2 (en) * 2010-08-31 2012-11-13 General Electric Company Alkaline and alkaline earth metal phosphate halides and phosphors
DE102010045403A1 (de) * 2010-09-15 2012-03-15 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
TW201220552A (en) 2010-11-15 2012-05-16 Advanced Optoelectronic Tech LED pakage
JP5840377B2 (ja) 2011-04-14 2016-01-06 日東電工株式会社 反射樹脂シートおよび発光ダイオード装置の製造方法
JPWO2013011628A1 (ja) * 2011-07-19 2015-02-23 パナソニック株式会社 発光装置及びその製造方法
US8917010B2 (en) 2012-02-02 2014-12-23 Citizen Electronics Co., Ltd. Lighting device including phosphor layer and light-transmitting layer that is arranged in contact with the phosphor layer to release static charge to substrate
JP2013191685A (ja) * 2012-03-13 2013-09-26 Panasonic Corp 発光装置及びそれを用いた照明装置
JP6079159B2 (ja) * 2012-11-16 2017-02-15 日亜化学工業株式会社 発光装置
JP6107174B2 (ja) * 2013-01-29 2017-04-05 東レ株式会社 樹脂組成物およびその硬化物
US20140264165A1 (en) 2013-03-15 2014-09-18 Henkel Corporation Oxetane-containing compounds and compositions thereof
JP5931006B2 (ja) 2013-06-03 2016-06-08 日亜化学工業株式会社 発光装置
JP2014241341A (ja) 2013-06-11 2014-12-25 株式会社東芝 半導体発光装置
JP2015041709A (ja) * 2013-08-22 2015-03-02 株式会社東芝 発光装置
JP2015053361A (ja) 2013-09-06 2015-03-19 株式会社東芝 半導体発光装置及びその製造方法
CN104064635A (zh) 2014-05-04 2014-09-24 易美芯光（北京）科技有限公司 一种垂直结构的led芯片的制备方法

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