CN106410020B - 半导体发光装置 - Google Patents
半导体发光装置 Download PDFInfo
- Publication number
- CN106410020B CN106410020B CN201610140817.8A CN201610140817A CN106410020B CN 106410020 B CN106410020 B CN 106410020B CN 201610140817 A CN201610140817 A CN 201610140817A CN 106410020 B CN106410020 B CN 106410020B
- Authority
- CN
- China
- Prior art keywords
- semiconductor light
- electrode
- phosphor
- resin layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0362—Manufacture or treatment of packages of encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0365—Manufacture or treatment of packages of means for heat extraction or cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8581—Means for heat extraction or cooling characterised by their material
Landscapes
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015153665 | 2015-08-03 | ||
| JP2015-153665 | 2015-08-03 | ||
| JP2015-237219 | 2015-12-04 | ||
| JP2015237219A JP2017034218A (ja) | 2015-08-03 | 2015-12-04 | 半導体発光装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106410020A CN106410020A (zh) | 2017-02-15 |
| CN106410020B true CN106410020B (zh) | 2019-08-09 |
Family
ID=57988939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610140817.8A Expired - Fee Related CN106410020B (zh) | 2015-08-03 | 2016-03-11 | 半导体发光装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10141482B2 (enExample) |
| JP (1) | JP2017034218A (enExample) |
| CN (1) | CN106410020B (enExample) |
| TW (1) | TWI663751B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10193031B2 (en) * | 2016-03-11 | 2019-01-29 | Rohinni, LLC | Method for applying phosphor to light emitting diodes and apparatus thereof |
| DE102016112275B4 (de) * | 2016-07-05 | 2022-10-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum herstellen einer optoelektronischen leuchtvorrichtung und optoelektronische leuchtvorrichtung |
| JP6665872B2 (ja) | 2018-01-15 | 2020-03-13 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
| JP6760324B2 (ja) * | 2018-03-27 | 2020-09-23 | 日亜化学工業株式会社 | 発光装置 |
| US10974226B2 (en) * | 2018-09-24 | 2021-04-13 | Sabic Global Technologies B.V. | Catalytic process for oxidative coupling of methane |
| WO2021002158A1 (ja) * | 2019-07-04 | 2021-01-07 | 日亜化学工業株式会社 | 発光装置の製造方法及び発光モジュールの製造方法、並びに、発光装置及び発光モジュール |
| CN111628066A (zh) * | 2020-06-04 | 2020-09-04 | 江西鸿利光电有限公司 | 一种提升led发光亮度的工艺方法 |
| TWM613115U (zh) * | 2021-01-20 | 2021-06-11 | 長華科技股份有限公司 | 複合式導線架及高亮度發光二極體的封裝結構 |
| JP7381903B2 (ja) * | 2021-03-31 | 2023-11-16 | 日亜化学工業株式会社 | 発光装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1577909A (zh) * | 2003-07-17 | 2005-02-09 | 丰田合成株式会社 | 发光器件 |
| US7049159B2 (en) * | 2000-10-13 | 2006-05-23 | Lumileds Lighting U.S., Llc | Stenciling phosphor layers on light emitting diodes |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6514782B1 (en) * | 1999-12-22 | 2003-02-04 | Lumileds Lighting, U.S., Llc | Method of making a III-nitride light-emitting device with increased light generating capability |
| JP2002314143A (ja) * | 2001-04-09 | 2002-10-25 | Toshiba Corp | 発光装置 |
| JP3707688B2 (ja) | 2002-05-31 | 2005-10-19 | スタンレー電気株式会社 | 発光装置およびその製造方法 |
| JP3655267B2 (ja) * | 2002-07-17 | 2005-06-02 | 株式会社東芝 | 半導体発光装置 |
| JP4857596B2 (ja) * | 2004-06-24 | 2012-01-18 | 豊田合成株式会社 | 発光素子の製造方法 |
| US7259402B2 (en) | 2004-09-22 | 2007-08-21 | Cree, Inc. | High efficiency group III nitride-silicon carbide light emitting diode |
| US8174037B2 (en) | 2004-09-22 | 2012-05-08 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
| JP2007194525A (ja) | 2006-01-23 | 2007-08-02 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
| JP4953846B2 (ja) | 2007-02-06 | 2012-06-13 | スタンレー電気株式会社 | 発光装置およびその製造方法 |
| US8159131B2 (en) | 2008-06-30 | 2012-04-17 | Bridgelux, Inc. | Light emitting device having a transparent thermally conductive layer |
| KR20100080423A (ko) * | 2008-12-30 | 2010-07-08 | 삼성엘이디 주식회사 | 발광소자 패키지 및 그 제조방법 |
| JPWO2010123052A1 (ja) * | 2009-04-22 | 2012-10-25 | シーシーエス株式会社 | 発光装置 |
| JP2011035198A (ja) | 2009-08-03 | 2011-02-17 | Ccs Inc | Led発光デバイスの製造方法 |
| JP2011066047A (ja) * | 2009-09-15 | 2011-03-31 | Sharp Corp | 窒化物半導体発光素子 |
| KR101055095B1 (ko) | 2010-03-09 | 2011-08-08 | 엘지이노텍 주식회사 | 발광장치 |
| JP5701523B2 (ja) * | 2010-06-22 | 2015-04-15 | 日東電工株式会社 | 半導体発光装置 |
| US8308982B2 (en) * | 2010-08-31 | 2012-11-13 | General Electric Company | Alkaline and alkaline earth metal phosphate halides and phosphors |
| DE102010045403A1 (de) * | 2010-09-15 | 2012-03-15 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| TW201220552A (en) | 2010-11-15 | 2012-05-16 | Advanced Optoelectronic Tech | LED pakage |
| JP5840377B2 (ja) | 2011-04-14 | 2016-01-06 | 日東電工株式会社 | 反射樹脂シートおよび発光ダイオード装置の製造方法 |
| JPWO2013011628A1 (ja) * | 2011-07-19 | 2015-02-23 | パナソニック株式会社 | 発光装置及びその製造方法 |
| US8917010B2 (en) | 2012-02-02 | 2014-12-23 | Citizen Electronics Co., Ltd. | Lighting device including phosphor layer and light-transmitting layer that is arranged in contact with the phosphor layer to release static charge to substrate |
| JP2013191685A (ja) * | 2012-03-13 | 2013-09-26 | Panasonic Corp | 発光装置及びそれを用いた照明装置 |
| JP6079159B2 (ja) * | 2012-11-16 | 2017-02-15 | 日亜化学工業株式会社 | 発光装置 |
| JP6107174B2 (ja) * | 2013-01-29 | 2017-04-05 | 東レ株式会社 | 樹脂組成物およびその硬化物 |
| US20140264165A1 (en) | 2013-03-15 | 2014-09-18 | Henkel Corporation | Oxetane-containing compounds and compositions thereof |
| JP5931006B2 (ja) | 2013-06-03 | 2016-06-08 | 日亜化学工業株式会社 | 発光装置 |
| JP2014241341A (ja) | 2013-06-11 | 2014-12-25 | 株式会社東芝 | 半導体発光装置 |
| JP2015041709A (ja) * | 2013-08-22 | 2015-03-02 | 株式会社東芝 | 発光装置 |
| JP2015053361A (ja) | 2013-09-06 | 2015-03-19 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
| CN104064635A (zh) | 2014-05-04 | 2014-09-24 | 易美芯光(北京)科技有限公司 | 一种垂直结构的led芯片的制备方法 |
-
2015
- 2015-12-04 JP JP2015237219A patent/JP2017034218A/ja not_active Ceased
-
2016
- 2016-03-03 US US15/060,550 patent/US10141482B2/en active Active
- 2016-03-09 TW TW105107256A patent/TWI663751B/zh not_active IP Right Cessation
- 2016-03-11 CN CN201610140817.8A patent/CN106410020B/zh not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7049159B2 (en) * | 2000-10-13 | 2006-05-23 | Lumileds Lighting U.S., Llc | Stenciling phosphor layers on light emitting diodes |
| CN1577909A (zh) * | 2003-07-17 | 2005-02-09 | 丰田合成株式会社 | 发光器件 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017034218A (ja) | 2017-02-09 |
| TW201707241A (zh) | 2017-02-16 |
| TWI663751B (zh) | 2019-06-21 |
| US10141482B2 (en) | 2018-11-27 |
| CN106410020A (zh) | 2017-02-15 |
| US20170040499A1 (en) | 2017-02-09 |
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| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20180105 Address after: Tokyo, Japan Applicant after: Kabushiki Kaisha TOSHIBA Address before: Tokyo, Japan Applicant before: Toshiba Corp. |
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| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190809 |
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| CF01 | Termination of patent right due to non-payment of annual fee |