TWI663751B - 半導體發光裝置 - Google Patents

半導體發光裝置 Download PDF

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Publication number
TWI663751B
TWI663751B TW105107256A TW105107256A TWI663751B TW I663751 B TWI663751 B TW I663751B TW 105107256 A TW105107256 A TW 105107256A TW 105107256 A TW105107256 A TW 105107256A TW I663751 B TWI663751 B TW I663751B
Authority
TW
Taiwan
Prior art keywords
semiconductor light
emitting device
electrode
phosphor
light emitting
Prior art date
Application number
TW105107256A
Other languages
English (en)
Chinese (zh)
Other versions
TW201707241A (zh
Inventor
Naoya Ushiyama
牛山直矢
Masahiro Ogushi
小串昌弘
Kazuhiro Tamura
田村一博
Hidenori Egoshi
江越秀徳
Toshihiro Kuroki
黑木敏宏
Original Assignee
Alpad Corporation
日商阿爾發得股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alpad Corporation, 日商阿爾發得股份有限公司 filed Critical Alpad Corporation
Publication of TW201707241A publication Critical patent/TW201707241A/zh
Application granted granted Critical
Publication of TWI663751B publication Critical patent/TWI663751B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0365—Manufacture or treatment of packages of means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material

Landscapes

  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
TW105107256A 2015-08-03 2016-03-09 半導體發光裝置 TWI663751B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015153665 2015-08-03
JP2015-153665 2015-08-03
JP2015-237219 2015-12-04
JP2015237219A JP2017034218A (ja) 2015-08-03 2015-12-04 半導体発光装置

Publications (2)

Publication Number Publication Date
TW201707241A TW201707241A (zh) 2017-02-16
TWI663751B true TWI663751B (zh) 2019-06-21

Family

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Family Applications (1)

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TW105107256A TWI663751B (zh) 2015-08-03 2016-03-09 半導體發光裝置

Country Status (4)

Country Link
US (1) US10141482B2 (enExample)
JP (1) JP2017034218A (enExample)
CN (1) CN106410020B (enExample)
TW (1) TWI663751B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10193031B2 (en) * 2016-03-11 2019-01-29 Rohinni, LLC Method for applying phosphor to light emitting diodes and apparatus thereof
DE102016112275B4 (de) * 2016-07-05 2022-10-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum herstellen einer optoelektronischen leuchtvorrichtung und optoelektronische leuchtvorrichtung
JP6665872B2 (ja) 2018-01-15 2020-03-13 日亜化学工業株式会社 発光装置及び発光装置の製造方法
JP6760324B2 (ja) * 2018-03-27 2020-09-23 日亜化学工業株式会社 発光装置
US10974226B2 (en) * 2018-09-24 2021-04-13 Sabic Global Technologies B.V. Catalytic process for oxidative coupling of methane
WO2021002158A1 (ja) * 2019-07-04 2021-01-07 日亜化学工業株式会社 発光装置の製造方法及び発光モジュールの製造方法、並びに、発光装置及び発光モジュール
CN111628066A (zh) * 2020-06-04 2020-09-04 江西鸿利光电有限公司 一种提升led发光亮度的工艺方法
TWM613115U (zh) * 2021-01-20 2021-06-11 長華科技股份有限公司 複合式導線架及高亮度發光二極體的封裝結構
JP7381903B2 (ja) * 2021-03-31 2023-11-16 日亜化学工業株式会社 発光装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1577909A (zh) * 2003-07-17 2005-02-09 丰田合成株式会社 发光器件
TW200623464A (en) * 2004-09-22 2006-07-01 Cree Inc High efficiency group III nitride led with lenticular surface
TW201145624A (en) * 2010-03-09 2011-12-16 Lg Innotek Co Ltd Light emitting device
TW201220552A (en) * 2010-11-15 2012-05-16 Advanced Optoelectronic Tech LED pakage
TW201242113A (en) * 2011-04-14 2012-10-16 Nitto Denko Corp Reflecting resin sheet, light emitting diode device and producing method thereof
US20130200785A1 (en) * 2012-02-02 2013-08-08 Citizen Electronics Co., Ltd. Lighting device
CN104064635A (zh) * 2014-05-04 2014-09-24 易美芯光（北京）科技有限公司 一种垂直结构的led芯片的制备方法
TW201443144A (zh) * 2013-03-15 2014-11-16 Henkel IP & Holding GmbH 含環氧丙烷之化合物及其組合物
TW201511351A (zh) * 2013-09-06 2015-03-16 Toshiba Kk 半導體發光裝置及其製造方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6514782B1 (en) * 1999-12-22 2003-02-04 Lumileds Lighting, U.S., Llc Method of making a III-nitride light-emitting device with increased light generating capability
US6650044B1 (en) 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
JP2002314143A (ja) * 2001-04-09 2002-10-25 Toshiba Corp 発光装置
JP3707688B2 (ja) 2002-05-31 2005-10-19 スタンレー電気株式会社 発光装置およびその製造方法
JP3655267B2 (ja) * 2002-07-17 2005-06-02 株式会社東芝 半導体発光装置
JP4857596B2 (ja) * 2004-06-24 2012-01-18 豊田合成株式会社 発光素子の製造方法
US7259402B2 (en) 2004-09-22 2007-08-21 Cree, Inc. High efficiency group III nitride-silicon carbide light emitting diode
JP2007194525A (ja) 2006-01-23 2007-08-02 Matsushita Electric Ind Co Ltd 半導体発光装置
JP4953846B2 (ja) 2007-02-06 2012-06-13 スタンレー電気株式会社 発光装置およびその製造方法
US8159131B2 (en) 2008-06-30 2012-04-17 Bridgelux, Inc. Light emitting device having a transparent thermally conductive layer
KR20100080423A (ko) * 2008-12-30 2010-07-08 삼성엘이디 주식회사 발광소자 패키지 및 그 제조방법
JPWO2010123052A1 (ja) * 2009-04-22 2012-10-25 シーシーエス株式会社 発光装置
JP2011035198A (ja) 2009-08-03 2011-02-17 Ccs Inc Ｌｅｄ発光デバイスの製造方法
JP2011066047A (ja) * 2009-09-15 2011-03-31 Sharp Corp 窒化物半導体発光素子
JP5701523B2 (ja) * 2010-06-22 2015-04-15 日東電工株式会社 半導体発光装置
US8308982B2 (en) * 2010-08-31 2012-11-13 General Electric Company Alkaline and alkaline earth metal phosphate halides and phosphors
DE102010045403A1 (de) * 2010-09-15 2012-03-15 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JPWO2013011628A1 (ja) * 2011-07-19 2015-02-23 パナソニック株式会社 発光装置及びその製造方法
JP2013191685A (ja) * 2012-03-13 2013-09-26 Panasonic Corp 発光装置及びそれを用いた照明装置
JP6079159B2 (ja) * 2012-11-16 2017-02-15 日亜化学工業株式会社 発光装置
JP6107174B2 (ja) * 2013-01-29 2017-04-05 東レ株式会社 樹脂組成物およびその硬化物
JP5931006B2 (ja) 2013-06-03 2016-06-08 日亜化学工業株式会社 発光装置
JP2014241341A (ja) 2013-06-11 2014-12-25 株式会社東芝 半導体発光装置
JP2015041709A (ja) * 2013-08-22 2015-03-02 株式会社東芝 発光装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1577909A (zh) * 2003-07-17 2005-02-09 丰田合成株式会社 发光器件
TW200623464A (en) * 2004-09-22 2006-07-01 Cree Inc High efficiency group III nitride led with lenticular surface
TW201145624A (en) * 2010-03-09 2011-12-16 Lg Innotek Co Ltd Light emitting device
TW201220552A (en) * 2010-11-15 2012-05-16 Advanced Optoelectronic Tech LED pakage
TW201242113A (en) * 2011-04-14 2012-10-16 Nitto Denko Corp Reflecting resin sheet, light emitting diode device and producing method thereof
US20130200785A1 (en) * 2012-02-02 2013-08-08 Citizen Electronics Co., Ltd. Lighting device
TW201443144A (zh) * 2013-03-15 2014-11-16 Henkel IP & Holding GmbH 含環氧丙烷之化合物及其組合物
TW201511351A (zh) * 2013-09-06 2015-03-16 Toshiba Kk 半導體發光裝置及其製造方法
CN104064635A (zh) * 2014-05-04 2014-09-24 易美芯光（北京）科技有限公司 一种垂直结构的led芯片的制备方法

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Publication number Publication date
CN106410020B (zh) 2019-08-09
JP2017034218A (ja) 2017-02-09
TW201707241A (zh) 2017-02-16
US10141482B2 (en) 2018-11-27
CN106410020A (zh) 2017-02-15
US20170040499A1 (en) 2017-02-09

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