JP2016536599A - ナノギャップ電極およびその製造方法 - Google Patents

ナノギャップ電極およびその製造方法 Download PDF

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JP2016536599A
JP2016536599A JP2016537398A JP2016537398A JP2016536599A JP 2016536599 A JP2016536599 A JP 2016536599A JP 2016537398 A JP2016537398 A JP 2016537398A JP 2016537398 A JP2016537398 A JP 2016537398A JP 2016536599 A JP2016536599 A JP 2016536599A
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池田　修二
修二 池田
オールダム マーク
オールダム マーク
ノードマン エリック
ノードマン エリック
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クオンタムバイオシステムズ株式会社
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    • G—PHYSICS
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    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/483—Physical analysis of biological material
    • G01N33/487—Physical analysis of biological material of liquid biological material
    • G01N33/48707—Physical analysis of biological material of liquid biological material by electrical means
    • G01N33/48721—Investigating individual macromolecules, e.g. by translocation through nanopores
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    • C12Q1/00—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions
    • C12Q1/68—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions involving nucleic acids
    • C12Q1/6869—Methods for sequencing
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/5886—Mechanical treatment
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/416—Systems
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    • G01N27/44704—Details; Accessories
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    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/416—Systems
    • G01N27/447—Systems using electrophoresis
    • G01N27/44756—Apparatus specially adapted therefor
    • G01N27/44791—Microapparatus
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/205—Nanosized electrodes, e.g. nanowire electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
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    • C12Q2565/00—Nucleic acid analysis characterised by mode or means of detection
    • C12Q2565/60—Detection means characterised by use of a special device
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    • G01N27/28—Electrolytic cell components
    • G01N27/30—Electrodes, e.g. test electrodes; Half-cells
    • G01N27/327—Biochemical electrodes, e.g. electrical or mechanical details for in vitro measurements
    • G01N27/3275—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction
    • G01N27/3278—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction involving nanosized elements, e.g. nanogaps or nanoparticles

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  • Genetics & Genomics (AREA)
  • Electrochemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
JP2016537398A 2013-08-27 2014-08-26 ナノギャップ電極およびその製造方法 Pending JP2016536599A (ja)

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JP2013176132 2013-08-27
JP2013176132 2013-08-27
JP2013177051 2013-08-28
JP2013177051 2013-08-28
PCT/IB2014/002143 WO2015028886A2 (en) 2013-08-27 2014-08-26 Nano-gap electrode and methods for manufacturing same

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JP2016536599A true JP2016536599A (ja) 2016-11-24
JP2016536599A5 JP2016536599A5 (enExample) 2017-11-16

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EP (1) EP3042187A4 (enExample)
JP (1) JP2016536599A (enExample)
KR (1) KR20160086320A (enExample)
CN (1) CN105593673A (enExample)
CA (1) CA2922600A1 (enExample)
TW (2) TWI632599B (enExample)
WO (1) WO2015028886A2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011108540A1 (ja) 2010-03-03 2011-09-09 国立大学法人大阪大学 ヌクレオチドを識別する方法および装置、ならびにポリヌクレオチドのヌクレオチド配列を決定する方法および装置
JP6276182B2 (ja) 2012-08-17 2018-02-07 クオンタムバイオシステムズ株式会社 試料の分析方法
JP6282036B2 (ja) 2012-12-27 2018-02-21 クオンタムバイオシステムズ株式会社 物質の移動速度の制御方法および制御装置
CN106104274B (zh) 2013-09-18 2018-05-22 量子生物有限公司 生物分子测序装置、系统和方法
JP2015077652A (ja) 2013-10-16 2015-04-23 クオンタムバイオシステムズ株式会社 ナノギャップ電極およびその製造方法
US10438811B1 (en) 2014-04-15 2019-10-08 Quantum Biosystems Inc. Methods for forming nano-gap electrodes for use in nanosensors
WO2015170782A1 (en) 2014-05-08 2015-11-12 Osaka University Devices, systems and methods for linearization of polymers
KR101489154B1 (ko) * 2014-06-26 2015-02-03 국민대학교산학협력단 잔류응력을 이용한 나노갭 센서의 제조방법 및 이에 의해 제조되는 나노갭 센서
US20160177383A1 (en) * 2014-12-16 2016-06-23 Arizona Board Of Regents On Behalf Of Arizona State University Nanochannel with integrated tunnel gap
CA3000942A1 (en) * 2015-10-08 2017-04-13 Quantum Biosystems Inc. Devices, systems and methods for nucleic acid sequencing
CN115595360A (zh) 2016-04-27 2023-01-13 因美纳剑桥有限公司（Gb） 用于生物分子的测量和测序的系统和方法
US10168299B2 (en) * 2016-07-15 2019-01-01 International Business Machines Corporation Reproducible and manufacturable nanogaps for embedded transverse electrode pairs in nanochannels
JP2019525766A (ja) * 2016-08-02 2019-09-12 国立大学法人大阪大学 ナノ電極対の作製及び較正のためのデバイス及び方法
US10739299B2 (en) * 2017-03-14 2020-08-11 Roche Sequencing Solutions, Inc. Nanopore well structures and methods
WO2019072743A1 (en) 2017-10-13 2019-04-18 Analog Devices Global Unlimited Company DESIGN AND MANUFACTURE OF SENSORS IN NANOGAP
EP3572104A1 (de) * 2018-05-25 2019-11-27 Berlin Heart GmbH Bauteil zum führen eines fluids mit einem sensor
TWI753317B (zh) * 2019-10-31 2022-01-21 錼創顯示科技股份有限公司 電極結構、微型發光元件以及顯示面板
WO2024181927A1 (en) * 2023-03-02 2024-09-06 Agency For Science, Technology And Research A nanogap electrode device, a method of making a nanogap electrode device, and a sensor for detecting a target analyte
CN120348906A (zh) * 2025-06-24 2025-07-22 中国人民解放军国防科技大学 一种金属纳米缝隙阵列的制备方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62194673A (ja) * 1986-02-20 1987-08-27 Fujitsu Ltd 半導体装置の製造方法
JPH04302151A (ja) * 1991-03-29 1992-10-26 Toshiba Corp 電荷結合装置の製造方法
JP3560990B2 (ja) * 1993-06-30 2004-09-02 株式会社東芝 固体撮像装置
US6905586B2 (en) * 2002-01-28 2005-06-14 Ut-Battelle, Llc DNA and RNA sequencing by nanoscale reading through programmable electrophoresis and nanoelectrode-gated tunneling and dielectric detection
JP2003332555A (ja) * 2002-05-09 2003-11-21 Fuji Film Microdevices Co Ltd 固体撮像素子およびその製造方法
US7410564B2 (en) * 2003-01-27 2008-08-12 Agilent Technologies, Inc. Apparatus and method for biopolymer identification during translocation through a nanopore
JP3787630B2 (ja) * 2003-02-14 2006-06-21 独立行政法人情報通信研究機構 ナノギャップ電極の製造方法
TWI273237B (en) * 2004-12-13 2007-02-11 Nat Applied Res Laboratories Coulomb blockade device operated under room temperature
CN101203740B (zh) * 2005-04-06 2011-03-23 哈佛大学校长及研究员协会 用碳纳米管控制的分子鉴定
TWI287041B (en) * 2005-04-27 2007-09-21 Jung-Tang Huang An ultra-rapid DNA sequencing method with nano-transistors array based devices
JP4869985B2 (ja) * 2006-03-06 2012-02-08 株式会社Ｊｖｃケンウッド 液晶表示装置及びその製造方法
JP2010500559A (ja) * 2006-08-11 2010-01-07 エージェンシー フォー サイエンス，テクノロジー アンド リサーチ ナノワイヤセンサ、ナノワイヤセンサアレイ、及び当該センサ及びセンサアレイを形成する方法
GB0625070D0 (en) * 2006-12-15 2007-01-24 Imp Innovations Ltd Characterization of molecules
JP2008186975A (ja) * 2007-01-30 2008-08-14 Renesas Technology Corp 半導体装置の製造方法
TWI383144B (zh) * 2008-09-23 2013-01-21 Univ Nat Chiao Tung 感測元件、製造方法及其生物檢測系統
TWI424160B (zh) * 2009-06-17 2014-01-21 國立交通大學 結合矽奈米線閘極二極體之感測元件、製造方法及其檢測系統
WO2011108540A1 (ja) * 2010-03-03 2011-09-09 国立大学法人大阪大学 ヌクレオチドを識別する方法および装置、ならびにポリヌクレオチドのヌクレオチド配列を決定する方法および装置
EP2573554A1 (en) * 2011-09-21 2013-03-27 Nxp B.V. Apparatus and method for bead detection

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US20160245789A1 (en) 2016-08-25
TW201907454A (zh) 2019-02-16
EP3042187A2 (en) 2016-07-13
TW201523710A (zh) 2015-06-16
KR20160086320A (ko) 2016-07-19
CN105593673A (zh) 2016-05-18
WO2015028886A3 (en) 2015-05-14
CA2922600A1 (en) 2015-03-05
TWI632599B (zh) 2018-08-11
EP3042187A4 (en) 2017-09-13
WO2015028886A2 (en) 2015-03-05

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