JP2016533639A5 - - Google Patents

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Publication number
JP2016533639A5
JP2016533639A5 JP2016522763A JP2016522763A JP2016533639A5 JP 2016533639 A5 JP2016533639 A5 JP 2016533639A5 JP 2016522763 A JP2016522763 A JP 2016522763A JP 2016522763 A JP2016522763 A JP 2016522763A JP 2016533639 A5 JP2016533639 A5 JP 2016533639A5
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JP
Japan
Prior art keywords
laser device
semiconductor chip
mesas
laser
light intensity
Prior art date
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Application number
JP2016522763A
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English (en)
Japanese (ja)
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JP2016533639A (ja
JP6550381B2 (ja
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Priority claimed from PCT/EP2014/071938 external-priority patent/WO2015055600A1/en
Publication of JP2016533639A publication Critical patent/JP2016533639A/ja
Publication of JP2016533639A5 publication Critical patent/JP2016533639A5/ja
Application granted granted Critical
Publication of JP6550381B2 publication Critical patent/JP6550381B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2016522763A 2013-10-16 2014-10-14 コンパクトなレーザーデバイス Active JP6550381B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13188872.9 2013-10-16
EP13188872 2013-10-16
PCT/EP2014/071938 WO2015055600A1 (en) 2013-10-16 2014-10-14 Compact laser device

Publications (3)

Publication Number Publication Date
JP2016533639A JP2016533639A (ja) 2016-10-27
JP2016533639A5 true JP2016533639A5 (enExample) 2018-08-30
JP6550381B2 JP6550381B2 (ja) 2019-07-24

Family

ID=49356317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016522763A Active JP6550381B2 (ja) 2013-10-16 2014-10-14 コンパクトなレーザーデバイス

Country Status (6)

Country Link
US (2) US10116119B2 (enExample)
EP (1) EP3058592B1 (enExample)
JP (1) JP6550381B2 (enExample)
CN (1) CN105637634A (enExample)
RU (1) RU2672155C2 (enExample)
WO (1) WO2015055600A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2672155C2 (ru) * 2013-10-16 2018-11-12 Конинклейке Филипс Н.В. Компактный лазерный прибор
RU2712939C2 (ru) 2015-04-10 2020-02-03 Конинклейке Филипс Н.В. Безопасный лазерный прибор для применений оптического зондирования
EP3217428B1 (de) 2016-03-07 2022-09-07 Infineon Technologies AG Mehrfachsubstrat sowie verfahren zu dessen herstellung
JP2017204640A (ja) 2016-05-11 2017-11-16 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 発光デバイス及びその製造方法
EP3392290B8 (de) * 2017-04-18 2020-11-11 Ems-Chemie Ag Polyamidformmasse und daraus hergestellter formkörper

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5587452A (en) * 1978-12-26 1980-07-02 Fujitsu Ltd Manufacture of semiconductor device
US6272160B1 (en) * 1998-02-03 2001-08-07 Applied Micro Circuits Corporation High-speed CMOS driver for vertical-cavity surface-emitting lasers
US6465744B2 (en) * 1998-03-27 2002-10-15 Tessera, Inc. Graded metallic leads for connection to microelectronic elements
DE19954093A1 (de) * 1999-11-10 2001-05-23 Infineon Technologies Ag Anordnung für Hochleistungslaser
US6465774B1 (en) * 2000-06-30 2002-10-15 Honeywell International Inc. Method and system for versatile optical sensor package
US6888871B1 (en) * 2000-07-12 2005-05-03 Princeton Optronics, Inc. VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system
US6415977B1 (en) * 2000-08-30 2002-07-09 Micron Technology, Inc. Method and apparatus for marking and identifying a defective die site
US7085300B2 (en) * 2001-12-28 2006-08-01 Finisar Corporation Integral vertical cavity surface emitting laser and power monitor
US7164702B1 (en) * 2003-08-29 2007-01-16 The United States Of America As Represented By The Secretary Of The Army Optical transmitters and interconnects using surface-emitting lasers and micro-optical elements
JP2005158945A (ja) * 2003-11-25 2005-06-16 Fanuc Ltd 半導体レーザ装置
JP4584066B2 (ja) * 2004-12-10 2010-11-17 韓國電子通信研究院 光感知器を備えた面発光レーザ素子及びこれを用いた光導波路素子
JP4839662B2 (ja) * 2005-04-08 2011-12-21 富士ゼロックス株式会社 面発光半導体レーザアレイおよびそれを用いた光伝送システム
JP5055717B2 (ja) 2005-06-20 2012-10-24 富士ゼロックス株式会社 面発光型半導体レーザ
US7233025B2 (en) * 2005-11-10 2007-06-19 Microsoft Corporation Electronic packaging for optical emitters and sensors
JP5034662B2 (ja) 2006-06-20 2012-09-26 ソニー株式会社 面発光型半導体レーザおよびその製造方法
EP2054980B1 (en) * 2006-08-23 2013-01-09 Ricoh Company, Ltd. Surface-emitting laser array, optical scanning device, and image forming device
JP4858032B2 (ja) * 2006-09-15 2012-01-18 日亜化学工業株式会社 発光装置
US8102893B2 (en) * 2007-06-14 2012-01-24 Necsel Intellectual Property Multiple emitter VECSEL
KR101360294B1 (ko) * 2008-05-21 2014-02-11 광주과학기술원 반사형 광학 센서장치
JP5261754B2 (ja) * 2008-11-27 2013-08-14 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
US8995493B2 (en) * 2009-02-17 2015-03-31 Trilumina Corp. Microlenses for multibeam arrays of optoelectronic devices for high frequency operation
US7949024B2 (en) 2009-02-17 2011-05-24 Trilumina Corporation Multibeam arrays of optoelectronic devices for high frequency operation
US8611382B2 (en) 2009-02-25 2013-12-17 Koninklijke Philips N.V. Output power stabilization for laser diodes using the photon-cooling dependent laser voltage
JP6026884B2 (ja) * 2009-08-10 2016-11-16 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 能動的なキャリヤの閉じ込めを伴う垂直共振器型面発光レーザ
US9620934B2 (en) * 2010-08-31 2017-04-11 Avago Technologies General Ip (Singapore) Pte. Ltd. Flip-chip assembly comprising an array of vertical cavity surface emitting lasers (VCSELs)
JP5874227B2 (ja) 2011-07-22 2016-03-02 富士ゼロックス株式会社 面発光型半導体レーザアレイ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
WO2013016676A2 (en) * 2011-07-27 2013-01-31 MYTEK, LLC (doing business as VIXAR) Method and apparatus including improved vertical-cavity surface-emitting lasers
CN104170188A (zh) 2012-03-14 2014-11-26 皇家飞利浦有限公司 Vcsel模块及其制造
JP5477728B2 (ja) * 2013-05-13 2014-04-23 株式会社リコー 面発光レーザアレイ
RU2672155C2 (ru) * 2013-10-16 2018-11-12 Конинклейке Филипс Н.В. Компактный лазерный прибор

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