JP2016533639A5 - - Google Patents

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Publication number
JP2016533639A5
JP2016533639A5 JP2016522763A JP2016522763A JP2016533639A5 JP 2016533639 A5 JP2016533639 A5 JP 2016533639A5 JP 2016522763 A JP2016522763 A JP 2016522763A JP 2016522763 A JP2016522763 A JP 2016522763A JP 2016533639 A5 JP2016533639 A5 JP 2016533639A5
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JP
Japan
Prior art keywords
laser device
semiconductor chip
mesas
laser
light intensity
Prior art date
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Application number
JP2016522763A
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English (en)
Japanese (ja)
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JP2016533639A (ja
JP6550381B2 (ja
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Priority claimed from PCT/EP2014/071938 external-priority patent/WO2015055600A1/en
Publication of JP2016533639A publication Critical patent/JP2016533639A/ja
Publication of JP2016533639A5 publication Critical patent/JP2016533639A5/ja
Application granted granted Critical
Publication of JP6550381B2 publication Critical patent/JP6550381B2/ja
Active legal-status Critical Current
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JP2016522763A 2013-10-16 2014-10-14 コンパクトなレーザーデバイス Active JP6550381B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13188872 2013-10-16
EP13188872.9 2013-10-16
PCT/EP2014/071938 WO2015055600A1 (en) 2013-10-16 2014-10-14 Compact laser device

Publications (3)

Publication Number Publication Date
JP2016533639A JP2016533639A (ja) 2016-10-27
JP2016533639A5 true JP2016533639A5 (enExample) 2018-08-30
JP6550381B2 JP6550381B2 (ja) 2019-07-24

Family

ID=49356317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016522763A Active JP6550381B2 (ja) 2013-10-16 2014-10-14 コンパクトなレーザーデバイス

Country Status (6)

Country Link
US (2) US10116119B2 (enExample)
EP (1) EP3058592B1 (enExample)
JP (1) JP6550381B2 (enExample)
CN (1) CN105637634A (enExample)
RU (1) RU2672155C2 (enExample)
WO (1) WO2015055600A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6550381B2 (ja) * 2013-10-16 2019-07-24 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． コンパクトなレーザーデバイス
WO2016162236A1 (en) * 2015-04-10 2016-10-13 Koninklijke Philips N.V. Safe laser device for optical sensing applications
EP3217428B1 (de) 2016-03-07 2022-09-07 Infineon Technologies AG Mehrfachsubstrat sowie verfahren zu dessen herstellung
JP2017204640A (ja) 2016-05-11 2017-11-16 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 発光デバイス及びその製造方法
EP3392290B8 (de) * 2017-04-18 2020-11-11 Ems-Chemie Ag Polyamidformmasse und daraus hergestellter formkörper

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JP2005158945A (ja) * 2003-11-25 2005-06-16 Fanuc Ltd 半導体レーザ装置
JP4584066B2 (ja) * 2004-12-10 2010-11-17 韓國電子通信研究院 光感知器を備えた面発光レーザ素子及びこれを用いた光導波路素子
JP4839662B2 (ja) * 2005-04-08 2011-12-21 富士ゼロックス株式会社 面発光半導体レーザアレイおよびそれを用いた光伝送システム
JP5055717B2 (ja) 2005-06-20 2012-10-24 富士ゼロックス株式会社 面発光型半導体レーザ
US7233025B2 (en) * 2005-11-10 2007-06-19 Microsoft Corporation Electronic packaging for optical emitters and sensors
JP5034662B2 (ja) 2006-06-20 2012-09-26 ソニー株式会社 面発光型半導体レーザおよびその製造方法
KR100990702B1 (ko) * 2006-08-23 2010-10-29 가부시키가이샤 리코 면 발광 레이저 어레이, 광학 주사 장치 및 화상 형성 장치
JP4858032B2 (ja) * 2006-09-15 2012-01-18 日亜化学工業株式会社 発光装置
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US8995493B2 (en) * 2009-02-17 2015-03-31 Trilumina Corp. Microlenses for multibeam arrays of optoelectronic devices for high frequency operation
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JP6026884B2 (ja) 2009-08-10 2016-11-16 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 能動的なキャリヤの閉じ込めを伴う垂直共振器型面発光レーザ
US9620934B2 (en) 2010-08-31 2017-04-11 Avago Technologies General Ip (Singapore) Pte. Ltd. Flip-chip assembly comprising an array of vertical cavity surface emitting lasers (VCSELs)
JP5874227B2 (ja) 2011-07-22 2016-03-02 富士ゼロックス株式会社 面発光型半導体レーザアレイ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
US9088134B2 (en) * 2011-07-27 2015-07-21 Vixar Inc. Method and apparatus including improved vertical-cavity surface-emitting lasers
KR20140134701A (ko) 2012-03-14 2014-11-24 코닌클리케 필립스 엔.브이. Ｖｃｓｅｌ 모듈 및 그것의 제조
JP5477728B2 (ja) * 2013-05-13 2014-04-23 株式会社リコー 面発光レーザアレイ
JP6550381B2 (ja) * 2013-10-16 2019-07-24 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． コンパクトなレーザーデバイス

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