JP6550381B2 - コンパクトなレーザーデバイス - Google Patents

コンパクトなレーザーデバイス Download PDF

Info

Publication number
JP6550381B2
JP6550381B2 JP2016522763A JP2016522763A JP6550381B2 JP 6550381 B2 JP6550381 B2 JP 6550381B2 JP 2016522763 A JP2016522763 A JP 2016522763A JP 2016522763 A JP2016522763 A JP 2016522763A JP 6550381 B2 JP6550381 B2 JP 6550381B2
Authority
JP
Japan
Prior art keywords
laser device
semiconductor chip
mesas
laser
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016522763A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016533639A (ja
JP2016533639A5 (enExample
Inventor
ヘニング ゲルラッハ，フィリップ
ヘニング ゲルラッハ，フィリップ
ヴァイグル，アレクサンダー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV filed Critical Koninklijke Philips NV
Publication of JP2016533639A publication Critical patent/JP2016533639A/ja
Publication of JP2016533639A5 publication Critical patent/JP2016533639A5/ja
Application granted granted Critical
Publication of JP6550381B2 publication Critical patent/JP6550381B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/18327—Structure being part of a DBR
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54413—Marks applied to semiconductor devices or parts comprising digital information, e.g. bar codes, data matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54433—Marks applied to semiconductor devices or parts containing identification or tracking information
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
    • H01L2223/5448—Located on chip prior to dicing and remaining on chip after dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2016522763A 2013-10-16 2014-10-14 コンパクトなレーザーデバイス Active JP6550381B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13188872 2013-10-16
EP13188872.9 2013-10-16
PCT/EP2014/071938 WO2015055600A1 (en) 2013-10-16 2014-10-14 Compact laser device

Publications (3)

Publication Number Publication Date
JP2016533639A JP2016533639A (ja) 2016-10-27
JP2016533639A5 JP2016533639A5 (enExample) 2018-08-30
JP6550381B2 true JP6550381B2 (ja) 2019-07-24

Family

ID=49356317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016522763A Active JP6550381B2 (ja) 2013-10-16 2014-10-14 コンパクトなレーザーデバイス

Country Status (6)

Country Link
US (2) US10116119B2 (enExample)
EP (1) EP3058592B1 (enExample)
JP (1) JP6550381B2 (enExample)
CN (1) CN105637634A (enExample)
RU (1) RU2672155C2 (enExample)
WO (1) WO2015055600A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018178117A (ja) * 2017-04-18 2018-11-15 エムス−パテント アクチエンゲゼルシャフト ポリアミド成形材料及びその成形物

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6550381B2 (ja) * 2013-10-16 2019-07-24 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． コンパクトなレーザーデバイス
WO2016162236A1 (en) * 2015-04-10 2016-10-13 Koninklijke Philips N.V. Safe laser device for optical sensing applications
EP3217428B1 (de) 2016-03-07 2022-09-07 Infineon Technologies AG Mehrfachsubstrat sowie verfahren zu dessen herstellung
JP2017204640A (ja) 2016-05-11 2017-11-16 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 発光デバイス及びその製造方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5587452A (en) * 1978-12-26 1980-07-02 Fujitsu Ltd Manufacture of semiconductor device
US6272160B1 (en) * 1998-02-03 2001-08-07 Applied Micro Circuits Corporation High-speed CMOS driver for vertical-cavity surface-emitting lasers
US6465744B2 (en) * 1998-03-27 2002-10-15 Tessera, Inc. Graded metallic leads for connection to microelectronic elements
DE19954093A1 (de) 1999-11-10 2001-05-23 Infineon Technologies Ag Anordnung für Hochleistungslaser
US6465774B1 (en) * 2000-06-30 2002-10-15 Honeywell International Inc. Method and system for versatile optical sensor package
US6888871B1 (en) * 2000-07-12 2005-05-03 Princeton Optronics, Inc. VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system
US6415977B1 (en) 2000-08-30 2002-07-09 Micron Technology, Inc. Method and apparatus for marking and identifying a defective die site
US7085300B2 (en) * 2001-12-28 2006-08-01 Finisar Corporation Integral vertical cavity surface emitting laser and power monitor
US7164702B1 (en) 2003-08-29 2007-01-16 The United States Of America As Represented By The Secretary Of The Army Optical transmitters and interconnects using surface-emitting lasers and micro-optical elements
JP2005158945A (ja) * 2003-11-25 2005-06-16 Fanuc Ltd 半導体レーザ装置
JP4584066B2 (ja) * 2004-12-10 2010-11-17 韓國電子通信研究院 光感知器を備えた面発光レーザ素子及びこれを用いた光導波路素子
JP4839662B2 (ja) * 2005-04-08 2011-12-21 富士ゼロックス株式会社 面発光半導体レーザアレイおよびそれを用いた光伝送システム
JP5055717B2 (ja) 2005-06-20 2012-10-24 富士ゼロックス株式会社 面発光型半導体レーザ
US7233025B2 (en) * 2005-11-10 2007-06-19 Microsoft Corporation Electronic packaging for optical emitters and sensors
JP5034662B2 (ja) 2006-06-20 2012-09-26 ソニー株式会社 面発光型半導体レーザおよびその製造方法
KR100990702B1 (ko) * 2006-08-23 2010-10-29 가부시키가이샤 리코 면 발광 레이저 어레이, 광학 주사 장치 및 화상 형성 장치
JP4858032B2 (ja) * 2006-09-15 2012-01-18 日亜化学工業株式会社 発光装置
US8102893B2 (en) * 2007-06-14 2012-01-24 Necsel Intellectual Property Multiple emitter VECSEL
KR101360294B1 (ko) * 2008-05-21 2014-02-11 광주과학기술원 반사형 광학 센서장치
JP5261754B2 (ja) * 2008-11-27 2013-08-14 株式会社リコー 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置
US8995493B2 (en) * 2009-02-17 2015-03-31 Trilumina Corp. Microlenses for multibeam arrays of optoelectronic devices for high frequency operation
US7949024B2 (en) 2009-02-17 2011-05-24 Trilumina Corporation Multibeam arrays of optoelectronic devices for high frequency operation
WO2010097751A2 (en) 2009-02-25 2010-09-02 Philips Intellectual Property & Standards Gmbh Output power stabilization for laser diodes using the photon-cooling dependent laser voltage
JP6026884B2 (ja) 2009-08-10 2016-11-16 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 能動的なキャリヤの閉じ込めを伴う垂直共振器型面発光レーザ
US9620934B2 (en) 2010-08-31 2017-04-11 Avago Technologies General Ip (Singapore) Pte. Ltd. Flip-chip assembly comprising an array of vertical cavity surface emitting lasers (VCSELs)
JP5874227B2 (ja) 2011-07-22 2016-03-02 富士ゼロックス株式会社 面発光型半導体レーザアレイ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
US9088134B2 (en) * 2011-07-27 2015-07-21 Vixar Inc. Method and apparatus including improved vertical-cavity surface-emitting lasers
KR20140134701A (ko) 2012-03-14 2014-11-24 코닌클리케 필립스 엔.브이. Ｖｃｓｅｌ 모듈 및 그것의 제조
JP5477728B2 (ja) * 2013-05-13 2014-04-23 株式会社リコー 面発光レーザアレイ
JP6550381B2 (ja) * 2013-10-16 2019-07-24 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． コンパクトなレーザーデバイス

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018178117A (ja) * 2017-04-18 2018-11-15 エムス−パテント アクチエンゲゼルシャフト ポリアミド成形材料及びその成形物
JP7104548B2 (ja) 2017-04-18 2022-07-21 エムス－パテント アクチエンゲゼルシャフト ポリアミド成形材料及びその成形物

Also Published As

Publication number Publication date
WO2015055600A1 (en) 2015-04-23
JP2016533639A (ja) 2016-10-27
EP3058592A1 (en) 2016-08-24
RU2672155C2 (ru) 2018-11-12
US20190052048A1 (en) 2019-02-14
US10707646B2 (en) 2020-07-07
RU2016118623A3 (enExample) 2018-05-15
RU2016118623A (ru) 2017-11-20
US10116119B2 (en) 2018-10-30
CN105637634A (zh) 2016-06-01
US20160254640A1 (en) 2016-09-01
EP3058592B1 (en) 2021-12-29

Similar Documents

Publication Publication Date Title
US10707646B2 (en) Compact laser device
CN113273039B (zh) 确定激光二极管故障的激光器装置和方法
US8624614B2 (en) Burn-in method for surface emitting semiconductor laser device
JP7544711B2 (ja) 発光ユニット及び測距装置
US20230307894A1 (en) Light emitting device
JP2020155622A (ja) 発光装置、光学装置および情報処理装置
US20210320479A1 (en) Light-emitting element array chip, light-emitting device, optical device, and information processing device
CN101504477A (zh) 光传输模块
WO2021024508A1 (ja) 発光装置、光学装置及び情報処理装置
US20220115836A1 (en) Light-emitting device, optical device, and information processing device
US5065007A (en) Apparatus for measuring light output from semiconductor light emitting element
US6830940B1 (en) Method and apparatus for performing whole wafer burn-in
CN117913651A (zh) 一种垂直腔面发射激光器及其制备方法
JP7482785B2 (ja) 面発光レーザ装置の駆動方法および面発光レーザ装置
JP4501404B2 (ja) 半導体発光素子の評価方法
US8178364B2 (en) Testing method of surface-emitting laser device and testing device thereof
JP2023042123A (ja) 発光装置及び光測定装置
Johnson et al. High output power 670nm VCSELs
US11699893B2 (en) VCSELs for high current low pulse width applications
JP2003133633A (ja) 半導体レーザ装置及び光電子装置
Geib et al. Fabrication and performance of large (64x64) arrays of integrated VCSELs and detectors
JP2023042124A (ja) 発光装置及び光測定装置
JP2021002670A (ja) 発光装置、光学装置および情報処理装置
JP2001066222A (ja) 光素子アレイの試験方法
JPH05343797A (ja) 半導体レーザ及びその使用方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20171012

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180718

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20180718

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20180802

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180904

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181126

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190129

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190304

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190604

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190701

R150 Certificate of patent or registration of utility model

Ref document number: 6550381

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250