CN105637634A - 紧凑激光器件 - Google Patents

紧凑激光器件 Download PDF

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Publication number
CN105637634A
CN105637634A CN201480056961.2A CN201480056961A CN105637634A CN 105637634 A CN105637634 A CN 105637634A CN 201480056961 A CN201480056961 A CN 201480056961A CN 105637634 A CN105637634 A CN 105637634A
Authority
CN
China
Prior art keywords
semiconductor chip
laser devices
laser
mesas
devices according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480056961.2A
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English (en)
Chinese (zh)
Inventor
P.H.格拉奇
A.维格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tongkuai Optoelectronic Device Co ltd
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of CN105637634A publication Critical patent/CN105637634A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/18327—Structure being part of a DBR
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54413—Marks applied to semiconductor devices or parts comprising digital information, e.g. bar codes, data matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54433—Marks applied to semiconductor devices or parts containing identification or tracking information
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
    • H01L2223/5448—Located on chip prior to dicing and remaining on chip after dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
CN201480056961.2A 2013-10-16 2014-10-14 紧凑激光器件 Pending CN105637634A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13188872.9 2013-10-16
EP13188872 2013-10-16
PCT/EP2014/071938 WO2015055600A1 (en) 2013-10-16 2014-10-14 Compact laser device

Publications (1)

Publication Number Publication Date
CN105637634A true CN105637634A (zh) 2016-06-01

Family

ID=49356317

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480056961.2A Pending CN105637634A (zh) 2013-10-16 2014-10-14 紧凑激光器件

Country Status (6)

Country Link
US (2) US10116119B2 (enExample)
EP (1) EP3058592B1 (enExample)
JP (1) JP6550381B2 (enExample)
CN (1) CN105637634A (enExample)
RU (1) RU2672155C2 (enExample)
WO (1) WO2015055600A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10116119B2 (en) * 2013-10-16 2018-10-30 Koninklijke Philips N.V. Compact laser device
BR112017021395A2 (pt) * 2015-04-10 2018-07-03 Koninklijke Philips Nv dispositivo de laser, módulo de laser, sensor óptico, dispositivo de comunicação móvel, e método de fabricação de um dispositivo de laser
EP3217428B1 (de) * 2016-03-07 2022-09-07 Infineon Technologies AG Mehrfachsubstrat sowie verfahren zu dessen herstellung
JP2017204640A (ja) 2016-05-11 2017-11-16 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 発光デバイス及びその製造方法
EP3392290B8 (de) * 2017-04-18 2020-11-11 Ems-Chemie Ag Polyamidformmasse und daraus hergestellter formkörper

Citations (10)

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JPS5587452A (en) * 1978-12-26 1980-07-02 Fujitsu Ltd Manufacture of semiconductor device
WO2001035504A2 (de) * 1999-11-10 2001-05-17 Infineon Technologies Ag Anordnung für hochleistungslaser
US6465774B1 (en) * 2000-06-30 2002-10-15 Honeywell International Inc. Method and system for versatile optical sensor package
CN1845407A (zh) * 2005-04-08 2006-10-11 富士施乐株式会社 表面发光半导体激光器阵列及使用其的光传输系统
CN102136677A (zh) * 2006-08-23 2011-07-27 株式会社理光 表面发射激光器阵列、光学扫描装置及图像形成装置
CN102224646A (zh) * 2008-11-27 2011-10-19 株式会社理光 表面发射激光器器件、表面发射激光器阵列、光学扫描装置和成像设备
US20120051685A1 (en) * 2010-08-31 2012-03-01 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. FLIP-CHIP ASSEMBLY COMPRISING AN ARRAY OF VERTICAL CAVITY SURFACE EMITTING LASERS (VCSELSs)
CN102474072A (zh) * 2009-08-10 2012-05-23 皇家飞利浦电子股份有限公司 具有有源载流子限制的垂直腔表面发射激光器
CN102891434A (zh) * 2011-07-22 2013-01-23 富士施乐株式会社 激光器阵列、激光器装置及光学传输装置和信息处理装置
US20130266326A1 (en) * 2009-02-17 2013-10-10 Trilumina Corporation Microlenses for Multibeam Arrays of Optoelectronic Devices for High Frequency Operation

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US6465744B2 (en) * 1998-03-27 2002-10-15 Tessera, Inc. Graded metallic leads for connection to microelectronic elements
US6888871B1 (en) * 2000-07-12 2005-05-03 Princeton Optronics, Inc. VCSEL and VCSEL array having integrated microlenses for use in a semiconductor laser pumped solid state laser system
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JP5055717B2 (ja) 2005-06-20 2012-10-24 富士ゼロックス株式会社 面発光型半導体レーザ
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JPS5587452A (en) * 1978-12-26 1980-07-02 Fujitsu Ltd Manufacture of semiconductor device
WO2001035504A2 (de) * 1999-11-10 2001-05-17 Infineon Technologies Ag Anordnung für hochleistungslaser
US6465774B1 (en) * 2000-06-30 2002-10-15 Honeywell International Inc. Method and system for versatile optical sensor package
CN1845407A (zh) * 2005-04-08 2006-10-11 富士施乐株式会社 表面发光半导体激光器阵列及使用其的光传输系统
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CN102224646A (zh) * 2008-11-27 2011-10-19 株式会社理光 表面发射激光器器件、表面发射激光器阵列、光学扫描装置和成像设备
US20130266326A1 (en) * 2009-02-17 2013-10-10 Trilumina Corporation Microlenses for Multibeam Arrays of Optoelectronic Devices for High Frequency Operation
CN102474072A (zh) * 2009-08-10 2012-05-23 皇家飞利浦电子股份有限公司 具有有源载流子限制的垂直腔表面发射激光器
US20120051685A1 (en) * 2010-08-31 2012-03-01 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. FLIP-CHIP ASSEMBLY COMPRISING AN ARRAY OF VERTICAL CAVITY SURFACE EMITTING LASERS (VCSELSs)
CN102891434A (zh) * 2011-07-22 2013-01-23 富士施乐株式会社 激光器阵列、激光器装置及光学传输装置和信息处理装置

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Also Published As

Publication number Publication date
US10116119B2 (en) 2018-10-30
RU2672155C2 (ru) 2018-11-12
US20190052048A1 (en) 2019-02-14
JP6550381B2 (ja) 2019-07-24
RU2016118623A (ru) 2017-11-20
JP2016533639A (ja) 2016-10-27
EP3058592B1 (en) 2021-12-29
US10707646B2 (en) 2020-07-07
WO2015055600A1 (en) 2015-04-23
EP3058592A1 (en) 2016-08-24
RU2016118623A3 (enExample) 2018-05-15
US20160254640A1 (en) 2016-09-01

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Legal Events

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20200628

Address after: Ulm

Applicant after: Tongkuai optoelectronic device Co.,Ltd.

Address before: Eindhoven, Netherlands

Applicant before: KONINKLIJKE PHILIPS N.V.

RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20160601