JP2012015542A5 - - Google Patents

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Publication number
JP2012015542A5
JP2012015542A5 JP2011195170A JP2011195170A JP2012015542A5 JP 2012015542 A5 JP2012015542 A5 JP 2012015542A5 JP 2011195170 A JP2011195170 A JP 2011195170A JP 2011195170 A JP2011195170 A JP 2011195170A JP 2012015542 A5 JP2012015542 A5 JP 2012015542A5
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JP
Japan
Prior art keywords
chip
laser
lasers
redundant
allows
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011195170A
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English (en)
Japanese (ja)
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JP2012015542A (ja
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Publication date
Application filed filed Critical
Publication of JP2012015542A publication Critical patent/JP2012015542A/ja
Publication of JP2012015542A5 publication Critical patent/JP2012015542A5/ja
Pending legal-status Critical Current

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JP2011195170A 2005-08-25 2011-09-07 低コストのＩｎＧａＡｌＮに基づくレーザ Pending JP2012015542A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US71088205P 2005-08-25 2005-08-25
US60/710,882 2005-08-25

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2008528144A Division JP5624720B2 (ja) 2005-08-25 2006-08-24 低コストのＩｎＧａＡｌＮに基づくレーザ

Publications (2)

Publication Number Publication Date
JP2012015542A JP2012015542A (ja) 2012-01-19
JP2012015542A5 true JP2012015542A5 (enExample) 2015-11-12

Family

ID=37772379

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008528144A Active JP5624720B2 (ja) 2005-08-25 2006-08-24 低コストのＩｎＧａＡｌＮに基づくレーザ
JP2011195170A Pending JP2012015542A (ja) 2005-08-25 2011-09-07 低コストのＩｎＧａＡｌＮに基づくレーザ

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2008528144A Active JP5624720B2 (ja) 2005-08-25 2006-08-24 低コストのＩｎＧａＡｌＮに基づくレーザ

Country Status (5)

Country Link
US (4) US7408183B2 (enExample)
EP (1) EP1917687A2 (enExample)
JP (2) JP5624720B2 (enExample)
CN (3) CN102035135B (enExample)
WO (1) WO2007025032A2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7667645B2 (en) 2006-05-25 2010-02-23 The Boeing Company GPS gyro calibration
USD580377S1 (en) * 2007-02-09 2008-11-11 Panasonic Corporation Light source of light-emitting diode
USD586764S1 (en) * 2007-02-09 2009-02-17 Panasonic Corporation Light source of light-emitting diode
USD580890S1 (en) * 2007-02-09 2008-11-18 Panasonic Corporation Light source of light-emitting diode
USD580889S1 (en) * 2007-02-09 2008-11-18 Panasonic Corporation Light source of light-emitting diode
US8064493B2 (en) * 2009-06-12 2011-11-22 Binoptics Corporation Surface emitting photonic device
CN103222137B (zh) * 2010-10-25 2016-02-03 宾奥普迪克斯股份有限公司 紧凑芯片中的长半导体激光腔
US8934512B2 (en) * 2011-12-08 2015-01-13 Binoptics Corporation Edge-emitting etched-facet lasers
CN107579428B (zh) 2012-05-08 2020-03-03 镁可微波技术有限公司 具有光束形状修改的激光器
US10852492B1 (en) * 2014-10-29 2020-12-01 Acacia Communications, Inc. Techniques to combine two integrated photonic substrates
US11025029B2 (en) * 2015-07-09 2021-06-01 International Business Machines Corporation Monolithic III-V nanolaser on silicon with blanket growth
US10170455B2 (en) 2015-09-04 2019-01-01 PlayNitride Inc. Light emitting device with buffer pads
TWI552385B (zh) * 2015-09-04 2016-10-01 錼創科技股份有限公司 發光元件
CN105826813B (zh) * 2016-05-06 2019-02-05 华中科技大学 一种基于高阶表面光栅的单模激光器
USD825148S1 (en) * 2016-06-08 2018-08-14 Troy Horning Clothing accessory to prevent slippage
US9964702B1 (en) * 2016-10-13 2018-05-08 Oracle International Corporation Surface-normal optical coupling interface with thermal-optic coefficient compensation
KR101929465B1 (ko) * 2016-10-18 2019-03-14 주식회사 옵텔라 광학모듈
WO2018134950A1 (ja) * 2017-01-19 2018-07-26 三菱電機株式会社 半導体レーザ素子、半導体レーザ素子の製造方法
US11211769B2 (en) * 2017-11-17 2021-12-28 Mitsubishi Electric Corporation Semiconductor laser device
DE102018111319A1 (de) * 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
US11011424B2 (en) 2019-08-06 2021-05-18 Applied Materials, Inc. Hybrid wafer dicing approach using a spatially multi-focused laser beam laser scribing process and plasma etch process
US20210313760A1 (en) * 2020-04-06 2021-10-07 Asahi Kasei Kabushiki Kaisha Method for manufacturing semiconductor laser diode and semiconductor laser diode
CN117008087B (zh) * 2022-04-29 2024-11-05 深圳市速腾聚创科技有限公司 基于平面波导芯片的光收发装置及激光雷达
CN119596480A (zh) * 2023-09-11 2025-03-11 华为技术有限公司 一种封装结构、光模块和光通信设备

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61111592A (ja) * 1984-07-25 1986-05-29 Hitachi Tobu Semiconductor Ltd 発光素子および発光素子を組み込んだ光電子装置
JPS6140080A (ja) * 1984-08-01 1986-02-26 Matsushita Electric Ind Co Ltd 半導体レ−ザ−装置
JPH07335987A (ja) * 1994-06-14 1995-12-22 Sony Corp Ｉｉ−ｖｉ族化合物半導体発光素子の製法
JPH09237940A (ja) * 1995-12-28 1997-09-09 Mitsubishi Electric Corp 半導体装置，及びその製造方法
JP3218980B2 (ja) * 1996-07-02 2001-10-15 日亜化学工業株式会社 ２次元レーザアレー
EP1909272A3 (en) * 1997-03-13 2009-03-04 Hitachi Maxell, Ltd. Compatible objective lens
JP4438101B2 (ja) * 1997-12-12 2010-03-24 ソニー株式会社 光ディスクの記録／再生方法、光ディスク及び光ディスク装置
US6002703A (en) * 1998-01-28 1999-12-14 University Of Utah Research Foundation Gaussian profile promoting cavity for semiconductor laser
EP0935319B1 (en) * 1998-02-04 2002-08-07 Mitsui Chemicals, Inc. Surface-emitting laser device
JP3319585B2 (ja) * 1998-06-16 2002-09-03 日亜化学工業株式会社 窒化物半導体レーザ素子の製造方法
US6222206B1 (en) * 1998-06-25 2001-04-24 Lucent Technologies Inc Wafer having top and bottom emitting vertical-cavity lasers
US6744800B1 (en) * 1998-12-30 2004-06-01 Xerox Corporation Method and structure for nitride based laser diode arrays on an insulating substrate
US6324204B1 (en) * 1999-10-19 2001-11-27 Sparkolor Corporation Channel-switched tunable laser for DWDM communications
JP3623713B2 (ja) * 2000-03-24 2005-02-23 日本電気株式会社 窒化物半導体発光素子
US6611544B1 (en) * 2000-04-11 2003-08-26 E20 Communications, Inc. Method and apparatus for narrow bandwidth distributed bragg reflector semiconductor lasers
JP2001339121A (ja) * 2000-05-29 2001-12-07 Sharp Corp 窒化物半導体発光素子とそれを含む光学装置
US7053413B2 (en) * 2000-10-23 2006-05-30 General Electric Company Homoepitaxial gallium-nitride-based light emitting device and method for producing
US6912237B2 (en) * 2001-02-06 2005-06-28 The Furukawa Electric Co., Ltd. Semiconductor laser module and semiconductor laser device having light feedback function
JP2002335049A (ja) * 2001-05-09 2002-11-22 Nichia Chem Ind Ltd 窒化ガリウム系素子用半導体基板
JP4204982B2 (ja) * 2002-04-04 2009-01-07 シャープ株式会社 半導体レーザ素子
JP2004071657A (ja) * 2002-08-01 2004-03-04 Nec Corp Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体基板およびｉｉｉ族窒化物半導体素子の製造方法
US7462882B2 (en) * 2003-04-24 2008-12-09 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus
US7211873B2 (en) * 2003-09-24 2007-05-01 Denso Corporation Sensor device having thin membrane and method of manufacturing the same
WO2005072224A2 (en) * 2004-01-20 2005-08-11 Binoptics Corporation Integrated photonic devices
JP4830315B2 (ja) * 2004-03-05 2011-12-07 日亜化学工業株式会社 半導体レーザ素子
JP4322187B2 (ja) * 2004-08-19 2009-08-26 シャープ株式会社 窒化物半導体発光素子

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