CN103222137B - 紧凑芯片中的长半导体激光腔 - Google Patents
紧凑芯片中的长半导体激光腔 Download PDFInfo
- Publication number
- CN103222137B CN103222137B CN201180047881.7A CN201180047881A CN103222137B CN 103222137 B CN103222137 B CN 103222137B CN 201180047881 A CN201180047881 A CN 201180047881A CN 103222137 B CN103222137 B CN 103222137B
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- CN
- China
- Prior art keywords
- waveguide
- laser
- etched
- facet
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 230000008878 coupling Effects 0.000 claims abstract description 10
- 238000010168 coupling process Methods 0.000 claims abstract description 10
- 238000005859 coupling reaction Methods 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 15
- 230000008859 change Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 230000007547 defect Effects 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000001808 coupling effect Effects 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 15
- 238000005520 cutting process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1039—Details on the cavity length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610091174.2A CN105514800A (zh) | 2010-10-25 | 2011-10-25 | 紧凑芯片中的长半导体激光腔 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US40652910P | 2010-10-25 | 2010-10-25 | |
US61/406,529 | 2010-10-25 | ||
PCT/US2011/057764 WO2012061166A1 (en) | 2010-10-25 | 2011-10-25 | Long semiconductor laser cavity in a compact chip |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610091174.2A Division CN105514800A (zh) | 2010-10-25 | 2011-10-25 | 紧凑芯片中的长半导体激光腔 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103222137A CN103222137A (zh) | 2013-07-24 |
CN103222137B true CN103222137B (zh) | 2016-02-03 |
Family
ID=45973002
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180047881.7A Expired - Fee Related CN103222137B (zh) | 2010-10-25 | 2011-10-25 | 紧凑芯片中的长半导体激光腔 |
CN201610091174.2A Pending CN105514800A (zh) | 2010-10-25 | 2011-10-25 | 紧凑芯片中的长半导体激光腔 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610091174.2A Pending CN105514800A (zh) | 2010-10-25 | 2011-10-25 | 紧凑芯片中的长半导体激光腔 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8605767B2 (zh) |
EP (1) | EP2643907A4 (zh) |
CN (2) | CN103222137B (zh) |
WO (1) | WO2012061166A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6472093B2 (ja) * | 2014-03-31 | 2019-02-20 | 国立研究開発法人理化学研究所 | 紫外線発光素子及びそれを用いた電気機器 |
US11353654B2 (en) * | 2020-09-24 | 2022-06-07 | Globalfoundries U.S. Inc. | Waveguide absorbers |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4851368A (en) * | 1987-12-04 | 1989-07-25 | Cornell Research Foundation, Inc. | Method of making travelling wave semi-conductor laser |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1407351A (en) * | 1973-02-06 | 1975-09-24 | Standard Telephones Cables Ltd | Injection lasers |
JPS6079786A (ja) * | 1983-10-06 | 1985-05-07 | Nec Corp | 双安定レ−ザ |
US4698823A (en) * | 1984-09-12 | 1987-10-06 | Litton Systems Inc. | System for reducing the sensitivity of a ring laser gyro to changes in a magnetic field |
JPS6276585A (ja) * | 1985-09-28 | 1987-04-08 | Sharp Corp | 半導体レ−ザ素子 |
US5132983A (en) * | 1990-05-17 | 1992-07-21 | Cornell Research Foundation, Inc. | Optical logic using semiconductor ring lasers |
US5235658A (en) * | 1992-03-30 | 1993-08-10 | At&T Bell Laboratories | Method and apparatus for connecting an optical fiber to a strip waveguide |
US20030108080A1 (en) * | 2001-08-01 | 2003-06-12 | Binoptics, Inc | Unidirectional curved ring lasers |
US6680961B2 (en) * | 2001-08-01 | 2004-01-20 | Binoptics, Inc. | Curved waveguide ring laser |
US7835415B2 (en) * | 2003-09-03 | 2010-11-16 | Binoptics Corporation | Single longitudinal mode laser diode |
US20050083982A1 (en) * | 2003-10-20 | 2005-04-21 | Binoptics Corporation | Surface emitting and receiving photonic device |
CN1871753A (zh) * | 2003-10-20 | 2006-11-29 | 宾奥普迪克斯股份有限公司 | 表面发射和接收光子器件 |
EP1735884B1 (en) * | 2004-04-15 | 2010-11-10 | Binoptics Corporation | Multi-level integrated photonic devices |
CN100373721C (zh) * | 2005-06-09 | 2008-03-05 | 中国科学院半导体研究所 | 脊形波导与二维光子晶体相结合的硅基拉曼激光器结构 |
EP1917687A2 (en) | 2005-08-25 | 2008-05-07 | Binoptics Corporation | Low cost ingaain based lasers |
US7889336B2 (en) * | 2008-02-01 | 2011-02-15 | Vladimir Yankov | Optical integrated nanospectrometer |
JP5257611B2 (ja) * | 2009-03-16 | 2013-08-07 | セイコーエプソン株式会社 | 発光装置 |
-
2011
- 2011-10-25 US US13/281,408 patent/US8605767B2/en active Active
- 2011-10-25 WO PCT/US2011/057764 patent/WO2012061166A1/en active Application Filing
- 2011-10-25 EP EP11838552.5A patent/EP2643907A4/en not_active Withdrawn
- 2011-10-25 CN CN201180047881.7A patent/CN103222137B/zh not_active Expired - Fee Related
- 2011-10-25 CN CN201610091174.2A patent/CN105514800A/zh active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4851368A (en) * | 1987-12-04 | 1989-07-25 | Cornell Research Foundation, Inc. | Method of making travelling wave semi-conductor laser |
Non-Patent Citations (1)
Title |
---|
Precise Determination of Turning Mirror Loss Using GaAs/AlGaAs Lasers with Up to Ten 90 Intracavity Turning Mirrors;John E. Johnson et al.;《IEEE Photonics Technology Letters》;19920101;第4卷(第1期);第24页右栏第3段,第25页左栏第1段、图1 * |
Also Published As
Publication number | Publication date |
---|---|
US8605767B2 (en) | 2013-12-10 |
CN105514800A (zh) | 2016-04-20 |
CN103222137A (zh) | 2013-07-24 |
EP2643907A4 (en) | 2017-12-06 |
EP2643907A1 (en) | 2013-10-02 |
US20120099613A1 (en) | 2012-04-26 |
WO2012061166A1 (en) | 2012-05-10 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP02 | Change in the address of a patent holder |
Address after: Massachusetts, USA Patentee after: BINOPTICS Corp. Address before: American New York Patentee before: BINOPTICS Corp. |
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C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Massachusetts, USA Patentee after: Bin O Purdy Kors LLC Address before: Massachusetts, USA Patentee before: BINOPTICS Corp. |
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C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Massachusetts, USA Patentee after: MACOM Technology Solutions Holdings Ltd. Address before: Massachusetts, USA Patentee before: M/A-COM technology solutions Holdings Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20160829 Address after: Massachusetts, USA Patentee after: M/A-COM technology solutions Holdings Ltd. Address before: Massachusetts, USA Patentee before: Bin O Purdy Kors LLC |
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C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Massachusetts, USA Patentee after: Magnesium Microwave Technology Co.,Ltd. Address before: Massachusetts, USA Patentee before: MACOM Technology Solutions Holdings Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160203 Termination date: 20191025 |