JP2016530726A - 半導体ウエハをプラズマ・ダイシングするための方法及び装置 - Google Patents
半導体ウエハをプラズマ・ダイシングするための方法及び装置 Download PDFInfo
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Classifications
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- H—ELECTRICITY
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
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- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
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- Drying Of Semiconductors (AREA)
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Abstract
Description
1)破損及び欠けが減少する
2)切り口寸法を20ミクロンより十分小さくなるまで減少させることができる
3)ダイの数が増加したとき、処理時間が著しくは長くならない
4)より薄いウエハには、処理時間が減少する
5)ダイ・トポロジが直線的なフォーマットに限定されない。
壁を有する処理チャンバを設けるステップと、
処理チャンバの壁に隣接してプラズマ源を設けるステップと、
処理チャンバ内に加工物サポートを設けるステップと、
前記加工物サポート上に加工物を載せるステップであって、前記加工物は、サポート・フィルム、フレーム及び基板を有する、ステップと、
基板上に少なくとも2つの切断領域を設けるステップであって、切断領域は、基板上のすべての隣接するデバイス構造体の間に位置付けられる、ステップと、
プラズマ源を使用してプラズマを発生するステップと、
発生されたプラズマを使用して前記加工物を処理するステップとを含む。
壁を有する処理チャンバを設けるステップと、
処理チャンバの壁に隣接してプラズマ源を設けるステップと、
処理チャンバ内に加工物サポートを設けるステップと、
前記加工物サポート上に加工物を載せるステップであって、前記加工物は、サポート・フィルム、フレーム及び基板を有する、ステップと、
基板上に少なくとも1つのデバイス構造体を設けるステップであって、デバイス構造体は、境界全体が基板上の1つ又は複数の切断領域に隣接する、ステップと、
プラズマ源を使用してプラズマを発生するステップと、
発生されたプラズマを使用して前記加工物を処理するステップとを含む。
壁を有する処理チャンバを設けるステップと、
処理チャンバの壁に隣接してプラズマ源を設けるステップと、
処理チャンバ内に加工物サポートを設けるステップと、
前記加工物サポート上に加工物を載せるステップであって、前記加工物は、サポート・フィルム、フレーム及び基板を有する、ステップと、
基板上のダイシング支援領域中にパターン形成される複数の分離ギャップを設けるステップと、
プラズマ源を使用してプラズマを発生するステップと、
発生されたプラズマを使用して前記加工物を処理するステップとを含む。
基板を処理するステップと、
少なくとも1つのウエハの性質(たとえば、材料のエッチング速度、選択性比率、特徴プロフィールなど)を測定するステップと、
少なくとも1つの測定された性質に基づき、機械的隔壁(たとえば、隔壁間隔、隔壁から基板までの距離、隔壁厚さ及び/又は貫通穴サイズ、間隔、形状、及び/又はアスペクト比など)を調節するステップとである。別のウエハが処理され、そして必要な場合、隔壁(690)が、所望のウエハ性質(1つ又は複数)を獲得するために、繰り返される。
Claims (3)
- 基板をプラズマ処理するための方法であって、
壁を有する処理チャンバを設けるステップと、
前記処理チャンバの前記壁に隣接してプラズマ源を設けるステップと、
前記処理チャンバ内に加工物サポートを設けるステップと、
前記加工物サポート上に加工物を載せるステップであって、前記加工物は、サポート・フィルム、フレーム及び前記基板を有する、ステップと、
前記基板上に少なくとも2つの切断領域を設けるステップであって、前記切断領域は、前記基板上のすべての隣接するデバイス構造体の間に位置付けられる、ステップと、
前記プラズマ源を使用してプラズマを発生するステップと、
前記発生されたプラズマを使用して前記加工物を処理するステップとを含む、方法。 - 基板をプラズマ処理するための方法であって、
壁を有する処理チャンバを設けるステップと、
前記処理チャンバの前記壁に隣接してプラズマ源を設けるステップと、
前記処理チャンバ内に加工物サポートを設けるステップと、
前記加工物サポート上に加工物を載せるステップであって、前記加工物は、サポート・フィルム、フレーム及び前記基板を有する、ステップと、
前記基板上に少なくとも1つのデバイス構造体を設けるステップであって、前記デバイス構造体は、境界全体が前記基板上の1つ又は複数の切断領域に隣接する、ステップと、
前記プラズマ源を使用してプラズマを発生するステップと、
前記発生されたプラズマを使用して前記加工物を処理するステップとを含む、方法。 - 基板をプラズマ処理するための方法であって、
壁を有する処理チャンバを設けるステップと、
前記処理チャンバの前記壁に隣接してプラズマ源を設けるステップと、
前記処理チャンバ内に加工物サポートを設けるステップと、
前記加工物サポート上に加工物を載せるステップであって、前記加工物は、サポート・フィルム、フレーム及び前記基板を有する、ステップと、
前記基板上のダイシング支援領域中にパターン形成される複数の分離ギャップを設けるステップと、
前記プラズマ源を使用してプラズマを発生するステップと、
前記発生されたプラズマを使用して前記加工物を処理するステップとを含む、方法。
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