JP2016530706A5 - - Google Patents

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JP2016530706A5
JP2016530706A5 JP2016523737A JP2016523737A JP2016530706A5 JP 2016530706 A5 JP2016530706 A5 JP 2016530706A5 JP 2016523737 A JP2016523737 A JP 2016523737A JP 2016523737 A JP2016523737 A JP 2016523737A JP 2016530706 A5 JP2016530706 A5 JP 2016530706A5
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substrate
inches
image
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vertical
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JP2016523737A
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JP6853038B2 (ja
JP2016530706A (ja
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Priority claimed from PCT/US2014/036213 external-priority patent/WO2014209492A1/en
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JP2016523737A 2013-06-26 2014-04-30 Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計 Active JP6853038B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361839823P 2013-06-26 2013-06-26
US61/839,823 2013-06-26
PCT/US2014/036213 WO2014209492A1 (en) 2013-06-26 2014-04-30 Single ring design for high yield, substrate extreme edge defect reduction in icp plasma processing chamber

Related Child Applications (1)

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JP2020213400A Division JP2021068909A (ja) 2013-06-26 2020-12-23 Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計

Publications (3)

Publication Number Publication Date
JP2016530706A JP2016530706A (ja) 2016-09-29
JP2016530706A5 true JP2016530706A5 (cg-RX-API-DMAC7.html) 2017-06-08
JP6853038B2 JP6853038B2 (ja) 2021-03-31

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JP2016523737A Active JP6853038B2 (ja) 2013-06-26 2014-04-30 Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計
JP2020213400A Pending JP2021068909A (ja) 2013-06-26 2020-12-23 Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計

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JP2020213400A Pending JP2021068909A (ja) 2013-06-26 2020-12-23 Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計

Country Status (6)

Country Link
US (1) US20160099162A1 (cg-RX-API-DMAC7.html)
JP (2) JP6853038B2 (cg-RX-API-DMAC7.html)
KR (1) KR102253990B1 (cg-RX-API-DMAC7.html)
CN (2) CN111180305A (cg-RX-API-DMAC7.html)
TW (1) TWM492915U (cg-RX-API-DMAC7.html)
WO (1) WO2014209492A1 (cg-RX-API-DMAC7.html)

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US9633862B2 (en) * 2015-08-31 2017-04-25 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and semiconductor manufacturing method
CN110249416B (zh) * 2017-04-07 2023-09-12 应用材料公司 在基板边缘上的等离子体密度控制
CN118248617A (zh) * 2017-07-24 2024-06-25 朗姆研究公司 可移动的边缘环设计
KR102191611B1 (ko) * 2017-09-13 2020-12-15 주식회사 엘지화학 패턴화 기판의 제조 방법
KR102891545B1 (ko) 2017-11-21 2025-11-25 램 리써치 코포레이션 하단 링 및 중간 에지 링
CN108063110B (zh) * 2018-01-10 2023-11-24 池州海琳服装有限公司 一种硅片浮动支撑机构
CN108269753B (zh) * 2018-01-10 2023-12-05 池州海琳服装有限公司 一种硅片单面清洗机
KR20230106754A (ko) 2018-08-13 2023-07-13 램 리써치 코포레이션 에지 링 포지셔닝 및 센터링 피처들을 포함하는 플라즈마 시스 튜닝을 위한 교체가능한 에지 링 어셈블리 및/또는 접을 수 있는 에지 링 어셈블리
SG11202103648WA (en) * 2018-10-18 2021-05-28 Lam Res Corp Lower plasma exclusion zone ring for bevel etcher
JP7541005B2 (ja) * 2018-12-03 2024-08-27 アプライド マテリアルズ インコーポレイテッド チャックとアーク放電に関する性能が改良された静電チャック設計
KR20220024568A (ko) 2019-06-18 2022-03-03 램 리써치 코포레이션 기판 프로세싱 시스템들을 위한 감소된 직경 캐리어 링 하드웨어
JP7597788B2 (ja) * 2019-08-05 2024-12-10 ラム リサーチ コーポレーション 基板処理システムのためのエッジリングシステム
TWM602283U (zh) * 2019-08-05 2020-10-01 美商蘭姆研究公司 基板處理系統用之具有升降銷溝槽的邊緣環
JP7466686B2 (ja) 2020-03-23 2024-04-12 ラム リサーチ コーポレーション 基板処理システムにおける中間リング腐食補償
US20220282371A1 (en) * 2021-03-03 2022-09-08 Applied Materials, Inc. Electrostatic chuck with metal shaft
CN217387074U (zh) * 2021-12-03 2022-09-06 朗姆研究公司 用于衬底处理系统中增强屏蔽的宽覆盖边缘环

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KR100292410B1 (ko) * 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
TW200626020A (en) * 2001-12-13 2006-07-16 Tokyo Electron Ltd Ring mechanism, and plasma processor using the ring mechanism
JP4209618B2 (ja) * 2002-02-05 2009-01-14 東京エレクトロン株式会社 プラズマ処理装置及びリング部材
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SG170717A1 (en) * 2009-11-02 2011-05-30 Lam Res Corp Hot edge ring with sloped upper surface
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US8988848B2 (en) * 2011-12-15 2015-03-24 Applied Materials, Inc. Extended and independent RF powered cathode substrate for extreme edge tunability

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