JP2016524793A5 - - Google Patents
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- Publication number
- JP2016524793A5 JP2016524793A5 JP2016515059A JP2016515059A JP2016524793A5 JP 2016524793 A5 JP2016524793 A5 JP 2016524793A5 JP 2016515059 A JP2016515059 A JP 2016515059A JP 2016515059 A JP2016515059 A JP 2016515059A JP 2016524793 A5 JP2016524793 A5 JP 2016524793A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- gas
- dopant
- composition
- tetrafluoride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 claims 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 28
- 239000002019 doping agent Substances 0.000 claims 28
- 239000010703 silicon Substances 0.000 claims 28
- 229910052710 silicon Inorganic materials 0.000 claims 28
- 239000007789 gas Substances 0.000 claims 27
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims 14
- 239000001257 hydrogen Substances 0.000 claims 7
- 229910052739 hydrogen Inorganic materials 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- 150000003377 silicon compounds Chemical class 0.000 claims 7
- 229910052724 xenon Inorganic materials 0.000 claims 6
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 6
- 150000002431 hydrogen Chemical class 0.000 claims 5
- 239000003085 diluting agent Substances 0.000 claims 4
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims 4
- -1 silicon compound silicon tetrafluoride Chemical class 0.000 claims 4
- 229910052743 krypton Inorganic materials 0.000 claims 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 239000005046 Chlorosilane Substances 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 2
- 150000001343 alkyl silanes Chemical class 0.000 claims 2
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims 2
- 238000010790 dilution Methods 0.000 claims 2
- 239000012895 dilution Substances 0.000 claims 2
- XPBBUZJBQWWFFJ-UHFFFAOYSA-N fluorosilane Chemical compound [SiH3]F XPBBUZJBQWWFFJ-UHFFFAOYSA-N 0.000 claims 2
- 238000005468 ion implantation Methods 0.000 claims 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims 2
- 229910000077 silane Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 claims 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims 1
- 125000004429 atom Chemical group 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 229910000078 germane Inorganic materials 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 claims 1
- 229910000058 selane Inorganic materials 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/898,809 | 2013-05-21 | ||
| US13/898,809 US8779383B2 (en) | 2010-02-26 | 2013-05-21 | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
| PCT/US2014/039028 WO2014190087A1 (en) | 2013-05-21 | 2014-05-21 | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016524793A JP2016524793A (ja) | 2016-08-18 |
| JP2016524793A5 true JP2016524793A5 (https=) | 2017-07-20 |
Family
ID=51934121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016515059A Pending JP2016524793A (ja) | 2013-05-21 | 2014-05-21 | 濃縮されたケイ素前駆体組成物およびこれを利用するための装置および方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP3000123A4 (https=) |
| JP (1) | JP2016524793A (https=) |
| KR (1) | KR20160009572A (https=) |
| CN (1) | CN105431927A (https=) |
| SG (1) | SG11201506474WA (https=) |
| WO (1) | WO2014190087A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3045206B1 (fr) * | 2015-12-10 | 2020-01-03 | Ion Beam Services | Procede de commande pour un implanteur fonctionnant en immersion plasma |
| US20170294289A1 (en) * | 2016-04-11 | 2017-10-12 | Aaron Reinicker | Boron compositions suitable for ion implantation to produce a boron-containing ion beam current |
| US10256069B2 (en) * | 2016-11-24 | 2019-04-09 | Axcelis Technologies, Inc. | Phosphorous trifluoride co-gas for carbon implants |
| US10361081B2 (en) * | 2016-11-24 | 2019-07-23 | Axcelis Technologies, Inc. | Phosphine co-gas for carbon implants |
| CN207458886U (zh) * | 2017-06-16 | 2018-06-05 | 上海凯世通半导体股份有限公司 | 束流比例检测装置 |
| WO2021248204A1 (en) * | 2020-06-11 | 2021-12-16 | The University Of Melbourne | Isotopic purification of silicon |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61181525A (ja) * | 1985-02-06 | 1986-08-14 | Rikagaku Kenkyusho | レ−ザ−同位体分離用作業物質およびレ−ザ−同位体分離法 |
| JPS6295820A (ja) * | 1985-10-23 | 1987-05-02 | Hitachi Ltd | イオン打込み方法 |
| JP3401561B2 (ja) * | 1999-03-29 | 2003-04-28 | 独立行政法人物質・材料研究機構 | 高純度同位体シリコン結晶膜の製造方法 |
| US7494888B2 (en) * | 2004-06-23 | 2009-02-24 | Agere Systems Inc. | Device and method using isotopically enriched silicon |
| US7586109B2 (en) * | 2007-01-25 | 2009-09-08 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving the performance and extending the lifetime of an ion source with gas dilution |
| US20080305598A1 (en) * | 2007-06-07 | 2008-12-11 | Horsky Thomas N | Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species |
| CN102047376A (zh) * | 2008-05-30 | 2011-05-04 | 艾克塞利斯科技公司 | 注入硼烷时在半导体基片上的粒子控制 |
| US8809800B2 (en) * | 2008-08-04 | 2014-08-19 | Varian Semicoductor Equipment Associates, Inc. | Ion source and a method for in-situ cleaning thereof |
| TWI466179B (zh) * | 2010-02-26 | 2014-12-21 | 尖端科技材料股份有限公司 | 用以增進離子植入系統中之離子源的壽命及性能之方法與設備 |
| US9984855B2 (en) * | 2010-11-17 | 2018-05-29 | Axcelis Technologies, Inc. | Implementation of co-gases for germanium and boron ion implants |
-
2014
- 2014-05-21 CN CN201480029840.9A patent/CN105431927A/zh active Pending
- 2014-05-21 JP JP2016515059A patent/JP2016524793A/ja active Pending
- 2014-05-21 EP EP14800248.8A patent/EP3000123A4/en not_active Withdrawn
- 2014-05-21 WO PCT/US2014/039028 patent/WO2014190087A1/en not_active Ceased
- 2014-05-21 SG SG11201506474WA patent/SG11201506474WA/en unknown
- 2014-05-21 KR KR1020157033138A patent/KR20160009572A/ko not_active Ceased
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