CN105431927A - 富集硅的前体组合物及使用其的设备和方法 - Google Patents

富集硅的前体组合物及使用其的设备和方法 Download PDF

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Publication number
CN105431927A
CN105431927A CN201480029840.9A CN201480029840A CN105431927A CN 105431927 A CN105431927 A CN 105431927A CN 201480029840 A CN201480029840 A CN 201480029840A CN 105431927 A CN105431927 A CN 105431927A
Authority
CN
China
Prior art keywords
silicon
isotopically enriched
gas
silicon tetrafluoride
tetrafluoride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480029840.9A
Other languages
English (en)
Chinese (zh)
Inventor
J·J·迈耶
R·S·雷
R·凯姆
J·D·斯威尼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Entegris Inc
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/898,809 external-priority patent/US8779383B2/en
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of CN105431927A publication Critical patent/CN105431927A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Silicon Compounds (AREA)
CN201480029840.9A 2013-05-21 2014-05-21 富集硅的前体组合物及使用其的设备和方法 Pending CN105431927A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/898,809 2013-05-21
US13/898,809 US8779383B2 (en) 2010-02-26 2013-05-21 Enriched silicon precursor compositions and apparatus and processes for utilizing same
PCT/US2014/039028 WO2014190087A1 (en) 2013-05-21 2014-05-21 Enriched silicon precursor compositions and apparatus and processes for utilizing same

Publications (1)

Publication Number Publication Date
CN105431927A true CN105431927A (zh) 2016-03-23

Family

ID=51934121

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480029840.9A Pending CN105431927A (zh) 2013-05-21 2014-05-21 富集硅的前体组合物及使用其的设备和方法

Country Status (6)

Country Link
EP (1) EP3000123A4 (https=)
JP (1) JP2016524793A (https=)
KR (1) KR20160009572A (https=)
CN (1) CN105431927A (https=)
SG (1) SG11201506474WA (https=)
WO (1) WO2014190087A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109148246A (zh) * 2017-06-16 2019-01-04 上海凯世通半导体股份有限公司 离子注入设备及方法
CN109362231A (zh) * 2016-04-11 2019-02-19 普莱克斯技术有限公司 用于离子注入的掺杂剂组合物
CN109983151A (zh) * 2016-11-24 2019-07-05 艾克塞利斯科技公司 用于碳注入物的磷化氢共伴气体
CN110023533A (zh) * 2016-11-24 2019-07-16 艾克塞利斯科技公司 用于碳注入物的三氟化磷共伴气体

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3045206B1 (fr) * 2015-12-10 2020-01-03 Ion Beam Services Procede de commande pour un implanteur fonctionnant en immersion plasma
WO2021248204A1 (en) * 2020-06-11 2021-12-16 The University Of Melbourne Isotopic purification of silicon

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6295820A (ja) * 1985-10-23 1987-05-02 Hitachi Ltd イオン打込み方法
JP2000345342A (ja) * 1999-03-29 2000-12-12 Natl Res Inst For Metals 高純度同位体シリコン結晶膜の製造方法
US20050287786A1 (en) * 2004-06-23 2005-12-29 Agere Systems Inc. Device and method using isotopically enriched silicon
US20080305598A1 (en) * 2007-06-07 2008-12-11 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species
CN101589449A (zh) * 2007-01-25 2009-11-25 瓦里安半导体设备公司 具有气体稀释的离子源的改善效能与延长生命期的技术
US20100024841A1 (en) * 2008-08-04 2010-02-04 Bon-Woong Koo Ion Source and a Method for In-Situ Cleaning Thereof
CN102047376A (zh) * 2008-05-30 2011-05-04 艾克塞利斯科技公司 注入硼烷时在半导体基片上的粒子控制
CN102782811A (zh) * 2010-02-26 2012-11-14 高级技术材料公司 用于提高离子注入系统中的离子源的寿命和性能的方法和设备

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61181525A (ja) * 1985-02-06 1986-08-14 Rikagaku Kenkyusho レ−ザ−同位体分離用作業物質およびレ−ザ−同位体分離法
US9984855B2 (en) * 2010-11-17 2018-05-29 Axcelis Technologies, Inc. Implementation of co-gases for germanium and boron ion implants

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6295820A (ja) * 1985-10-23 1987-05-02 Hitachi Ltd イオン打込み方法
JP2000345342A (ja) * 1999-03-29 2000-12-12 Natl Res Inst For Metals 高純度同位体シリコン結晶膜の製造方法
US20050287786A1 (en) * 2004-06-23 2005-12-29 Agere Systems Inc. Device and method using isotopically enriched silicon
CN101589449A (zh) * 2007-01-25 2009-11-25 瓦里安半导体设备公司 具有气体稀释的离子源的改善效能与延长生命期的技术
US20080305598A1 (en) * 2007-06-07 2008-12-11 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species
CN102047376A (zh) * 2008-05-30 2011-05-04 艾克塞利斯科技公司 注入硼烷时在半导体基片上的粒子控制
US20100024841A1 (en) * 2008-08-04 2010-02-04 Bon-Woong Koo Ion Source and a Method for In-Situ Cleaning Thereof
CN102782811A (zh) * 2010-02-26 2012-11-14 高级技术材料公司 用于提高离子注入系统中的离子源的寿命和性能的方法和设备

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109362231A (zh) * 2016-04-11 2019-02-19 普莱克斯技术有限公司 用于离子注入的掺杂剂组合物
CN109983151A (zh) * 2016-11-24 2019-07-05 艾克塞利斯科技公司 用于碳注入物的磷化氢共伴气体
CN110023533A (zh) * 2016-11-24 2019-07-16 艾克塞利斯科技公司 用于碳注入物的三氟化磷共伴气体
CN110023533B (zh) * 2016-11-24 2022-08-19 艾克塞利斯科技公司 用于碳注入物的三氟化磷共伴气体
CN109983151B (zh) * 2016-11-24 2023-03-24 艾克塞利斯科技公司 用于碳注入物的磷化氢共伴气体
CN109148246A (zh) * 2017-06-16 2019-01-04 上海凯世通半导体股份有限公司 离子注入设备及方法
CN109148246B (zh) * 2017-06-16 2024-02-02 上海凯世通半导体股份有限公司 离子注入设备及方法

Also Published As

Publication number Publication date
WO2014190087A1 (en) 2014-11-27
EP3000123A1 (en) 2016-03-30
KR20160009572A (ko) 2016-01-26
EP3000123A4 (en) 2016-12-28
SG11201506474WA (en) 2015-09-29
JP2016524793A (ja) 2016-08-18

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