SG11201506474WA - Enriched silicon precursor compositions and apparatus and processes for utilizing same - Google Patents
Enriched silicon precursor compositions and apparatus and processes for utilizing sameInfo
- Publication number
- SG11201506474WA SG11201506474WA SG11201506474WA SG11201506474WA SG11201506474WA SG 11201506474W A SG11201506474W A SG 11201506474WA SG 11201506474W A SG11201506474W A SG 11201506474WA SG 11201506474W A SG11201506474W A SG 11201506474WA SG 11201506474W A SG11201506474W A SG 11201506474WA
- Authority
- SG
- Singapore
- Prior art keywords
- processes
- silicon precursor
- precursor compositions
- utilizing same
- enriched silicon
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
- H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/898,809 US8779383B2 (en) | 2010-02-26 | 2013-05-21 | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
| PCT/US2014/039028 WO2014190087A1 (en) | 2013-05-21 | 2014-05-21 | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201506474WA true SG11201506474WA (en) | 2015-09-29 |
Family
ID=51934121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201506474WA SG11201506474WA (en) | 2013-05-21 | 2014-05-21 | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP3000123A4 (https=) |
| JP (1) | JP2016524793A (https=) |
| KR (1) | KR20160009572A (https=) |
| CN (1) | CN105431927A (https=) |
| SG (1) | SG11201506474WA (https=) |
| WO (1) | WO2014190087A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3045206B1 (fr) * | 2015-12-10 | 2020-01-03 | Ion Beam Services | Procede de commande pour un implanteur fonctionnant en immersion plasma |
| US20170294289A1 (en) * | 2016-04-11 | 2017-10-12 | Aaron Reinicker | Boron compositions suitable for ion implantation to produce a boron-containing ion beam current |
| US10256069B2 (en) * | 2016-11-24 | 2019-04-09 | Axcelis Technologies, Inc. | Phosphorous trifluoride co-gas for carbon implants |
| US10361081B2 (en) * | 2016-11-24 | 2019-07-23 | Axcelis Technologies, Inc. | Phosphine co-gas for carbon implants |
| CN207458886U (zh) * | 2017-06-16 | 2018-06-05 | 上海凯世通半导体股份有限公司 | 束流比例检测装置 |
| WO2021248204A1 (en) * | 2020-06-11 | 2021-12-16 | The University Of Melbourne | Isotopic purification of silicon |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61181525A (ja) * | 1985-02-06 | 1986-08-14 | Rikagaku Kenkyusho | レ−ザ−同位体分離用作業物質およびレ−ザ−同位体分離法 |
| JPS6295820A (ja) * | 1985-10-23 | 1987-05-02 | Hitachi Ltd | イオン打込み方法 |
| JP3401561B2 (ja) * | 1999-03-29 | 2003-04-28 | 独立行政法人物質・材料研究機構 | 高純度同位体シリコン結晶膜の製造方法 |
| US7494888B2 (en) * | 2004-06-23 | 2009-02-24 | Agere Systems Inc. | Device and method using isotopically enriched silicon |
| US7586109B2 (en) * | 2007-01-25 | 2009-09-08 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving the performance and extending the lifetime of an ion source with gas dilution |
| US20080305598A1 (en) * | 2007-06-07 | 2008-12-11 | Horsky Thomas N | Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species |
| CN102047376A (zh) * | 2008-05-30 | 2011-05-04 | 艾克塞利斯科技公司 | 注入硼烷时在半导体基片上的粒子控制 |
| US8809800B2 (en) * | 2008-08-04 | 2014-08-19 | Varian Semicoductor Equipment Associates, Inc. | Ion source and a method for in-situ cleaning thereof |
| TWI466179B (zh) * | 2010-02-26 | 2014-12-21 | 尖端科技材料股份有限公司 | 用以增進離子植入系統中之離子源的壽命及性能之方法與設備 |
| US9984855B2 (en) * | 2010-11-17 | 2018-05-29 | Axcelis Technologies, Inc. | Implementation of co-gases for germanium and boron ion implants |
-
2014
- 2014-05-21 CN CN201480029840.9A patent/CN105431927A/zh active Pending
- 2014-05-21 JP JP2016515059A patent/JP2016524793A/ja active Pending
- 2014-05-21 EP EP14800248.8A patent/EP3000123A4/en not_active Withdrawn
- 2014-05-21 WO PCT/US2014/039028 patent/WO2014190087A1/en not_active Ceased
- 2014-05-21 SG SG11201506474WA patent/SG11201506474WA/en unknown
- 2014-05-21 KR KR1020157033138A patent/KR20160009572A/ko not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CN105431927A (zh) | 2016-03-23 |
| WO2014190087A1 (en) | 2014-11-27 |
| EP3000123A1 (en) | 2016-03-30 |
| KR20160009572A (ko) | 2016-01-26 |
| EP3000123A4 (en) | 2016-12-28 |
| JP2016524793A (ja) | 2016-08-18 |
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