EP3000123A4 - ENHANCED SILICON PREPARATION COMPOSITIONS AND DEVICE AND METHOD FOR USE THEREOF - Google Patents

ENHANCED SILICON PREPARATION COMPOSITIONS AND DEVICE AND METHOD FOR USE THEREOF

Info

Publication number
EP3000123A4
EP3000123A4 EP14800248.8A EP14800248A EP3000123A4 EP 3000123 A4 EP3000123 A4 EP 3000123A4 EP 14800248 A EP14800248 A EP 14800248A EP 3000123 A4 EP3000123 A4 EP 3000123A4
Authority
EP
European Patent Office
Prior art keywords
methods
silicon precursor
precursor compositions
enriched silicon
enriched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP14800248.8A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP3000123A1 (en
Inventor
James J Mayer
Richard S Ray
Robert Kaim
Joseph D Sweeney
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Entegris Inc
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/898,809 external-priority patent/US8779383B2/en
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of EP3000123A1 publication Critical patent/EP3000123A1/en
Publication of EP3000123A4 publication Critical patent/EP3000123A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Silicon Compounds (AREA)
EP14800248.8A 2013-05-21 2014-05-21 ENHANCED SILICON PREPARATION COMPOSITIONS AND DEVICE AND METHOD FOR USE THEREOF Withdrawn EP3000123A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/898,809 US8779383B2 (en) 2010-02-26 2013-05-21 Enriched silicon precursor compositions and apparatus and processes for utilizing same
PCT/US2014/039028 WO2014190087A1 (en) 2013-05-21 2014-05-21 Enriched silicon precursor compositions and apparatus and processes for utilizing same

Publications (2)

Publication Number Publication Date
EP3000123A1 EP3000123A1 (en) 2016-03-30
EP3000123A4 true EP3000123A4 (en) 2016-12-28

Family

ID=51934121

Family Applications (1)

Application Number Title Priority Date Filing Date
EP14800248.8A Withdrawn EP3000123A4 (en) 2013-05-21 2014-05-21 ENHANCED SILICON PREPARATION COMPOSITIONS AND DEVICE AND METHOD FOR USE THEREOF

Country Status (6)

Country Link
EP (1) EP3000123A4 (https=)
JP (1) JP2016524793A (https=)
KR (1) KR20160009572A (https=)
CN (1) CN105431927A (https=)
SG (1) SG11201506474WA (https=)
WO (1) WO2014190087A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3045206B1 (fr) * 2015-12-10 2020-01-03 Ion Beam Services Procede de commande pour un implanteur fonctionnant en immersion plasma
US20170294289A1 (en) * 2016-04-11 2017-10-12 Aaron Reinicker Boron compositions suitable for ion implantation to produce a boron-containing ion beam current
US10256069B2 (en) * 2016-11-24 2019-04-09 Axcelis Technologies, Inc. Phosphorous trifluoride co-gas for carbon implants
US10361081B2 (en) * 2016-11-24 2019-07-23 Axcelis Technologies, Inc. Phosphine co-gas for carbon implants
CN207458886U (zh) * 2017-06-16 2018-06-05 上海凯世通半导体股份有限公司 束流比例检测装置
WO2021248204A1 (en) * 2020-06-11 2021-12-16 The University Of Melbourne Isotopic purification of silicon

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6295820A (ja) * 1985-10-23 1987-05-02 Hitachi Ltd イオン打込み方法
JP2000345342A (ja) * 1999-03-29 2000-12-12 Natl Res Inst For Metals 高純度同位体シリコン結晶膜の製造方法
US20080179545A1 (en) * 2007-01-25 2008-07-31 Varian Semiconductor Equipment Associates Technique for Improving the Performance and Extending the Lifetime of an Ion Source with Gas Dilution
US20120142174A1 (en) * 2010-02-26 2012-06-07 Advanced Technology Materials, Inc. Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61181525A (ja) * 1985-02-06 1986-08-14 Rikagaku Kenkyusho レ−ザ−同位体分離用作業物質およびレ−ザ−同位体分離法
US7494888B2 (en) * 2004-06-23 2009-02-24 Agere Systems Inc. Device and method using isotopically enriched silicon
US20080305598A1 (en) * 2007-06-07 2008-12-11 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species
CN102047376A (zh) * 2008-05-30 2011-05-04 艾克塞利斯科技公司 注入硼烷时在半导体基片上的粒子控制
US8809800B2 (en) * 2008-08-04 2014-08-19 Varian Semicoductor Equipment Associates, Inc. Ion source and a method for in-situ cleaning thereof
US9984855B2 (en) * 2010-11-17 2018-05-29 Axcelis Technologies, Inc. Implementation of co-gases for germanium and boron ion implants

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6295820A (ja) * 1985-10-23 1987-05-02 Hitachi Ltd イオン打込み方法
JP2000345342A (ja) * 1999-03-29 2000-12-12 Natl Res Inst For Metals 高純度同位体シリコン結晶膜の製造方法
US20080179545A1 (en) * 2007-01-25 2008-07-31 Varian Semiconductor Equipment Associates Technique for Improving the Performance and Extending the Lifetime of an Ion Source with Gas Dilution
US20120142174A1 (en) * 2010-02-26 2012-06-07 Advanced Technology Materials, Inc. Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
BULANOV A D ET AL: "Determination of Impurities in Monoisotopic Silicon Tetrafluoride", INORGANIC MATERIALS, NAUKA/INTERPERIODICA, MO, vol. 40, no. 7, 1 July 2004 (2004-07-01), pages 754 - 759, XP019297310, ISSN: 1608-3172 *
See also references of WO2014190087A1 *
SENNIKOV P G ET AL: "Towards 0.99999Si", SOLID STATE COMMUNICATIONS, PERGAMON, GB, vol. 152, no. 6, 5 January 2012 (2012-01-05), pages 455 - 457, XP028396140, ISSN: 0038-1098, [retrieved on 20120110], DOI: 10.1016/J.SSC.2012.01.008 *
SUZUKI H ET AL: "Formation of isotope controlled SiC thin film by plasma chemical vapor deposition and its characterization", APPLIED SURFACE SCIENCE, ELSEVIER, AMSTERDAM, NL, vol. 241, no. 1-2, 28 February 2005 (2005-02-28), pages 266 - 269, XP027771514, ISSN: 0169-4332, [retrieved on 20050228] *

Also Published As

Publication number Publication date
CN105431927A (zh) 2016-03-23
WO2014190087A1 (en) 2014-11-27
EP3000123A1 (en) 2016-03-30
KR20160009572A (ko) 2016-01-26
SG11201506474WA (en) 2015-09-29
JP2016524793A (ja) 2016-08-18

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RIN1 Information on inventor provided before grant (corrected)

Inventor name: MAYER, JAMES, J.

Inventor name: SWEENEY, JOSEPH, D.

Inventor name: RAY, RICHARD, S.

Inventor name: KAIM,ROBERT

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Effective date: 20161130

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