JP2016524793A - 濃縮されたケイ素前駆体組成物およびこれを利用するための装置および方法 - Google Patents

濃縮されたケイ素前駆体組成物およびこれを利用するための装置および方法 Download PDF

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Publication number
JP2016524793A
JP2016524793A JP2016515059A JP2016515059A JP2016524793A JP 2016524793 A JP2016524793 A JP 2016524793A JP 2016515059 A JP2016515059 A JP 2016515059A JP 2016515059 A JP2016515059 A JP 2016515059A JP 2016524793 A JP2016524793 A JP 2016524793A
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JP
Japan
Prior art keywords
silicon
isotopically enriched
gas
dopant
silicon tetrafluoride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016515059A
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English (en)
Japanese (ja)
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JP2016524793A5 (https=
Inventor
メイヤー，ジェームズ・ジェイ
レイ，リチャード・エス
カイム，ロバート
スウィーニー，ジョーゼフ・ディー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Entegris Inc
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from US13/898,809 external-priority patent/US8779383B2/en
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of JP2016524793A publication Critical patent/JP2016524793A/ja
Publication of JP2016524793A5 publication Critical patent/JP2016524793A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Silicon Compounds (AREA)
JP2016515059A 2013-05-21 2014-05-21 濃縮されたケイ素前駆体組成物およびこれを利用するための装置および方法 Pending JP2016524793A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/898,809 2013-05-21
US13/898,809 US8779383B2 (en) 2010-02-26 2013-05-21 Enriched silicon precursor compositions and apparatus and processes for utilizing same
PCT/US2014/039028 WO2014190087A1 (en) 2013-05-21 2014-05-21 Enriched silicon precursor compositions and apparatus and processes for utilizing same

Publications (2)

Publication Number Publication Date
JP2016524793A true JP2016524793A (ja) 2016-08-18
JP2016524793A5 JP2016524793A5 (https=) 2017-07-20

Family

ID=51934121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016515059A Pending JP2016524793A (ja) 2013-05-21 2014-05-21 濃縮されたケイ素前駆体組成物およびこれを利用するための装置および方法

Country Status (6)

Country Link
EP (1) EP3000123A4 (https=)
JP (1) JP2016524793A (https=)
KR (1) KR20160009572A (https=)
CN (1) CN105431927A (https=)
SG (1) SG11201506474WA (https=)
WO (1) WO2014190087A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3045206B1 (fr) * 2015-12-10 2020-01-03 Ion Beam Services Procede de commande pour un implanteur fonctionnant en immersion plasma
US20170294289A1 (en) * 2016-04-11 2017-10-12 Aaron Reinicker Boron compositions suitable for ion implantation to produce a boron-containing ion beam current
US10256069B2 (en) * 2016-11-24 2019-04-09 Axcelis Technologies, Inc. Phosphorous trifluoride co-gas for carbon implants
US10361081B2 (en) * 2016-11-24 2019-07-23 Axcelis Technologies, Inc. Phosphine co-gas for carbon implants
CN207458886U (zh) * 2017-06-16 2018-06-05 上海凯世通半导体股份有限公司 束流比例检测装置
WO2021248204A1 (en) * 2020-06-11 2021-12-16 The University Of Melbourne Isotopic purification of silicon

Citations (4)

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JPS61181525A (ja) * 1985-02-06 1986-08-14 Rikagaku Kenkyusho レ−ザ−同位体分離用作業物質およびレ−ザ−同位体分離法
JPS6295820A (ja) * 1985-10-23 1987-05-02 Hitachi Ltd イオン打込み方法
WO2011106750A2 (en) * 2010-02-26 2011-09-01 Advanced Technology Materials, Inc. Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
JP2014502409A (ja) * 2010-11-17 2014-01-30 アクセリス テクノロジーズ， インコーポレイテッド ゲルマニウムおよびホウ素イオン注入のための複合ガスの利用（ｉｍｐｌｅｍｅｎｔａｔｉｏｎ）

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JP3401561B2 (ja) * 1999-03-29 2003-04-28 独立行政法人物質・材料研究機構 高純度同位体シリコン結晶膜の製造方法
US7494888B2 (en) * 2004-06-23 2009-02-24 Agere Systems Inc. Device and method using isotopically enriched silicon
US7586109B2 (en) * 2007-01-25 2009-09-08 Varian Semiconductor Equipment Associates, Inc. Technique for improving the performance and extending the lifetime of an ion source with gas dilution
US20080305598A1 (en) * 2007-06-07 2008-12-11 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species
CN102047376A (zh) * 2008-05-30 2011-05-04 艾克塞利斯科技公司 注入硼烷时在半导体基片上的粒子控制
US8809800B2 (en) * 2008-08-04 2014-08-19 Varian Semicoductor Equipment Associates, Inc. Ion source and a method for in-situ cleaning thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61181525A (ja) * 1985-02-06 1986-08-14 Rikagaku Kenkyusho レ−ザ−同位体分離用作業物質およびレ−ザ−同位体分離法
JPS6295820A (ja) * 1985-10-23 1987-05-02 Hitachi Ltd イオン打込み方法
WO2011106750A2 (en) * 2010-02-26 2011-09-01 Advanced Technology Materials, Inc. Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
US20120142174A1 (en) * 2010-02-26 2012-06-07 Advanced Technology Materials, Inc. Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
JP2013521596A (ja) * 2010-02-26 2013-06-10 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド イオン注入システム中のイオン源の寿命および性能を向上させる方法および装置
JP2014502409A (ja) * 2010-11-17 2014-01-30 アクセリス テクノロジーズ， インコーポレイテッド ゲルマニウムおよびホウ素イオン注入のための複合ガスの利用（ｉｍｐｌｅｍｅｎｔａｔｉｏｎ）

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
鈴木 裕、荒木 弘、野田 哲二: "赤外レーザーによるＳｉ２Ｆ６の同位体選択分解に及ぼす波長効果", 日本金属学会誌, vol. 第５８巻、第９号, JPN6018017187, 1994, JP, pages 1101 - 1102, ISSN: 0003954682 *
鈴木 裕、荒木 弘、野田 哲二: "赤外レーザ照射によるＳｉ同位体の濃縮", 日本金属学会誌, vol. 第６１巻 第２号, JPN6018017185, 1997, JP, pages 145 - 152, ISSN: 0003793869 *

Also Published As

Publication number Publication date
CN105431927A (zh) 2016-03-23
WO2014190087A1 (en) 2014-11-27
EP3000123A1 (en) 2016-03-30
KR20160009572A (ko) 2016-01-26
EP3000123A4 (en) 2016-12-28
SG11201506474WA (en) 2015-09-29

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Publication Publication Date Title
US8779383B2 (en) Enriched silicon precursor compositions and apparatus and processes for utilizing same
US8785889B2 (en) Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
JP2016524793A (ja) 濃縮されたケイ素前駆体組成物およびこれを利用するための装置および方法

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