KR20160009572A - 규소 풍부 전구체 조성물 및 이를 이용하기 위한 장치 및 방법 - Google Patents

규소 풍부 전구체 조성물 및 이를 이용하기 위한 장치 및 방법 Download PDF

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Publication number
KR20160009572A
KR20160009572A KR1020157033138A KR20157033138A KR20160009572A KR 20160009572 A KR20160009572 A KR 20160009572A KR 1020157033138 A KR1020157033138 A KR 1020157033138A KR 20157033138 A KR20157033138 A KR 20157033138A KR 20160009572 A KR20160009572 A KR 20160009572A
Authority
KR
South Korea
Prior art keywords
isotope
silicon
rich
gas
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020157033138A
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English (en)
Korean (ko)
Inventor
제임스 제이 마이어
리차드 에스 레이
로버트 카임
조셉 디 스위니
Original Assignee
인티그리스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/898,809 external-priority patent/US8779383B2/en
Application filed by 인티그리스, 인코포레이티드 filed Critical 인티그리스, 인코포레이티드
Publication of KR20160009572A publication Critical patent/KR20160009572A/ko
Ceased legal-status Critical Current

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Classifications

    • H01L21/26506—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H01L2924/01014—

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Silicon Compounds (AREA)
KR1020157033138A 2013-05-21 2014-05-21 규소 풍부 전구체 조성물 및 이를 이용하기 위한 장치 및 방법 Ceased KR20160009572A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/898,809 2013-05-21
US13/898,809 US8779383B2 (en) 2010-02-26 2013-05-21 Enriched silicon precursor compositions and apparatus and processes for utilizing same
PCT/US2014/039028 WO2014190087A1 (en) 2013-05-21 2014-05-21 Enriched silicon precursor compositions and apparatus and processes for utilizing same

Publications (1)

Publication Number Publication Date
KR20160009572A true KR20160009572A (ko) 2016-01-26

Family

ID=51934121

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157033138A Ceased KR20160009572A (ko) 2013-05-21 2014-05-21 규소 풍부 전구체 조성물 및 이를 이용하기 위한 장치 및 방법

Country Status (6)

Country Link
EP (1) EP3000123A4 (https=)
JP (1) JP2016524793A (https=)
KR (1) KR20160009572A (https=)
CN (1) CN105431927A (https=)
SG (1) SG11201506474WA (https=)
WO (1) WO2014190087A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3045206B1 (fr) * 2015-12-10 2020-01-03 Ion Beam Services Procede de commande pour un implanteur fonctionnant en immersion plasma
US20170294289A1 (en) * 2016-04-11 2017-10-12 Aaron Reinicker Boron compositions suitable for ion implantation to produce a boron-containing ion beam current
US10256069B2 (en) * 2016-11-24 2019-04-09 Axcelis Technologies, Inc. Phosphorous trifluoride co-gas for carbon implants
US10361081B2 (en) * 2016-11-24 2019-07-23 Axcelis Technologies, Inc. Phosphine co-gas for carbon implants
CN207458886U (zh) * 2017-06-16 2018-06-05 上海凯世通半导体股份有限公司 束流比例检测装置
WO2021248204A1 (en) * 2020-06-11 2021-12-16 The University Of Melbourne Isotopic purification of silicon

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61181525A (ja) * 1985-02-06 1986-08-14 Rikagaku Kenkyusho レ−ザ−同位体分離用作業物質およびレ−ザ−同位体分離法
JPS6295820A (ja) * 1985-10-23 1987-05-02 Hitachi Ltd イオン打込み方法
JP3401561B2 (ja) * 1999-03-29 2003-04-28 独立行政法人物質・材料研究機構 高純度同位体シリコン結晶膜の製造方法
US7494888B2 (en) * 2004-06-23 2009-02-24 Agere Systems Inc. Device and method using isotopically enriched silicon
US7586109B2 (en) * 2007-01-25 2009-09-08 Varian Semiconductor Equipment Associates, Inc. Technique for improving the performance and extending the lifetime of an ion source with gas dilution
US20080305598A1 (en) * 2007-06-07 2008-12-11 Horsky Thomas N Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species
CN102047376A (zh) * 2008-05-30 2011-05-04 艾克塞利斯科技公司 注入硼烷时在半导体基片上的粒子控制
US8809800B2 (en) * 2008-08-04 2014-08-19 Varian Semicoductor Equipment Associates, Inc. Ion source and a method for in-situ cleaning thereof
TWI466179B (zh) * 2010-02-26 2014-12-21 尖端科技材料股份有限公司 用以增進離子植入系統中之離子源的壽命及性能之方法與設備
US9984855B2 (en) * 2010-11-17 2018-05-29 Axcelis Technologies, Inc. Implementation of co-gases for germanium and boron ion implants

Also Published As

Publication number Publication date
CN105431927A (zh) 2016-03-23
WO2014190087A1 (en) 2014-11-27
EP3000123A1 (en) 2016-03-30
EP3000123A4 (en) 2016-12-28
SG11201506474WA (en) 2015-09-29
JP2016524793A (ja) 2016-08-18

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