TWI562368B - Semiconductor structure and process thereof - Google Patents

Semiconductor structure and process thereof

Info

Publication number
TWI562368B
TWI562368B TW101117232A TW101117232A TWI562368B TW I562368 B TWI562368 B TW I562368B TW 101117232 A TW101117232 A TW 101117232A TW 101117232 A TW101117232 A TW 101117232A TW I562368 B TWI562368 B TW I562368B
Authority
TW
Taiwan
Prior art keywords
semiconductor structure
semiconductor
Prior art date
Application number
TW101117232A
Other languages
Chinese (zh)
Other versions
TW201347183A (en
Inventor
Chen Kuo Chiang
Chun Hsien Lin
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW101117232A priority Critical patent/TWI562368B/en
Publication of TW201347183A publication Critical patent/TW201347183A/en
Application granted granted Critical
Publication of TWI562368B publication Critical patent/TWI562368B/en

Links

TW101117232A 2012-05-15 2012-05-15 Semiconductor structure and process thereof TWI562368B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW101117232A TWI562368B (en) 2012-05-15 2012-05-15 Semiconductor structure and process thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW101117232A TWI562368B (en) 2012-05-15 2012-05-15 Semiconductor structure and process thereof

Publications (2)

Publication Number Publication Date
TW201347183A TW201347183A (en) 2013-11-16
TWI562368B true TWI562368B (en) 2016-12-11

Family

ID=49990787

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101117232A TWI562368B (en) 2012-05-15 2012-05-15 Semiconductor structure and process thereof

Country Status (1)

Country Link
TW (1) TWI562368B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020130340A1 (en) * 2000-02-11 2002-09-19 Yanjun Ma Method of forming a multilayer dielectric stack
US20050202624A1 (en) * 2004-03-12 2005-09-15 Infineon Technologies North America Corp. Plasma ion implantation system
US20060054937A1 (en) * 2004-09-10 2006-03-16 Gerald Lucovsky Semiconductor devices having an interfacial dielectric layer and related methods
US20060197227A1 (en) * 2005-02-24 2006-09-07 Yong Liang Semiconductor structures and methods for fabricating semiconductor structures comprising high dielectric constant stacked structures
US20090085175A1 (en) * 2007-09-28 2009-04-02 Tokyo Electron Limited Semiconductor device containing a buried threshold voltage adjustment layer and method of forming

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020130340A1 (en) * 2000-02-11 2002-09-19 Yanjun Ma Method of forming a multilayer dielectric stack
US20050202624A1 (en) * 2004-03-12 2005-09-15 Infineon Technologies North America Corp. Plasma ion implantation system
US20060054937A1 (en) * 2004-09-10 2006-03-16 Gerald Lucovsky Semiconductor devices having an interfacial dielectric layer and related methods
US20060197227A1 (en) * 2005-02-24 2006-09-07 Yong Liang Semiconductor structures and methods for fabricating semiconductor structures comprising high dielectric constant stacked structures
US20090085175A1 (en) * 2007-09-28 2009-04-02 Tokyo Electron Limited Semiconductor device containing a buried threshold voltage adjustment layer and method of forming

Also Published As

Publication number Publication date
TW201347183A (en) 2013-11-16

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