TWI562368B - Semiconductor structure and process thereof - Google Patents
Semiconductor structure and process thereofInfo
- Publication number
- TWI562368B TWI562368B TW101117232A TW101117232A TWI562368B TW I562368 B TWI562368 B TW I562368B TW 101117232 A TW101117232 A TW 101117232A TW 101117232 A TW101117232 A TW 101117232A TW I562368 B TWI562368 B TW I562368B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor structure
- semiconductor
- Prior art date
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101117232A TWI562368B (en) | 2012-05-15 | 2012-05-15 | Semiconductor structure and process thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101117232A TWI562368B (en) | 2012-05-15 | 2012-05-15 | Semiconductor structure and process thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201347183A TW201347183A (en) | 2013-11-16 |
TWI562368B true TWI562368B (en) | 2016-12-11 |
Family
ID=49990787
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101117232A TWI562368B (en) | 2012-05-15 | 2012-05-15 | Semiconductor structure and process thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI562368B (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020130340A1 (en) * | 2000-02-11 | 2002-09-19 | Yanjun Ma | Method of forming a multilayer dielectric stack |
US20050202624A1 (en) * | 2004-03-12 | 2005-09-15 | Infineon Technologies North America Corp. | Plasma ion implantation system |
US20060054937A1 (en) * | 2004-09-10 | 2006-03-16 | Gerald Lucovsky | Semiconductor devices having an interfacial dielectric layer and related methods |
US20060197227A1 (en) * | 2005-02-24 | 2006-09-07 | Yong Liang | Semiconductor structures and methods for fabricating semiconductor structures comprising high dielectric constant stacked structures |
US20090085175A1 (en) * | 2007-09-28 | 2009-04-02 | Tokyo Electron Limited | Semiconductor device containing a buried threshold voltage adjustment layer and method of forming |
-
2012
- 2012-05-15 TW TW101117232A patent/TWI562368B/en active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020130340A1 (en) * | 2000-02-11 | 2002-09-19 | Yanjun Ma | Method of forming a multilayer dielectric stack |
US20050202624A1 (en) * | 2004-03-12 | 2005-09-15 | Infineon Technologies North America Corp. | Plasma ion implantation system |
US20060054937A1 (en) * | 2004-09-10 | 2006-03-16 | Gerald Lucovsky | Semiconductor devices having an interfacial dielectric layer and related methods |
US20060197227A1 (en) * | 2005-02-24 | 2006-09-07 | Yong Liang | Semiconductor structures and methods for fabricating semiconductor structures comprising high dielectric constant stacked structures |
US20090085175A1 (en) * | 2007-09-28 | 2009-04-02 | Tokyo Electron Limited | Semiconductor device containing a buried threshold voltage adjustment layer and method of forming |
Also Published As
Publication number | Publication date |
---|---|
TW201347183A (en) | 2013-11-16 |
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