JP2014216311A5 - - Google Patents

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Publication number
JP2014216311A5
JP2014216311A5 JP2013193605A JP2013193605A JP2014216311A5 JP 2014216311 A5 JP2014216311 A5 JP 2014216311A5 JP 2013193605 A JP2013193605 A JP 2013193605A JP 2013193605 A JP2013193605 A JP 2013193605A JP 2014216311 A5 JP2014216311 A5 JP 2014216311A5
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JP
Japan
Prior art keywords
dopant gas
enriched
ritomi
flow rate
ion source
Prior art date
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Application number
JP2013193605A
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English (en)
Japanese (ja)
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JP5775551B2 (ja
JP2014216311A (ja
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Priority claimed from US13/869,456 external-priority patent/US8883620B1/en
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Publication of JP2014216311A publication Critical patent/JP2014216311A/ja
Publication of JP2014216311A5 publication Critical patent/JP2014216311A5/ja
Application granted granted Critical
Publication of JP5775551B2 publication Critical patent/JP5775551B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013193605A 2013-04-24 2013-09-19 イオン注入プロセスにおいて同位体的に富化されたレベルのドーパントガス組成物を用いる方法 Expired - Fee Related JP5775551B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/869,456 US8883620B1 (en) 2013-04-24 2013-04-24 Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process
US13/869,456 2013-04-24

Publications (3)

Publication Number Publication Date
JP2014216311A JP2014216311A (ja) 2014-11-17
JP2014216311A5 true JP2014216311A5 (https=) 2015-06-25
JP5775551B2 JP5775551B2 (ja) 2015-09-09

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ID=49162090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013193605A Expired - Fee Related JP5775551B2 (ja) 2013-04-24 2013-09-19 イオン注入プロセスにおいて同位体的に富化されたレベルのドーパントガス組成物を用いる方法

Country Status (7)

Country Link
US (1) US8883620B1 (https=)
EP (1) EP2796590A1 (https=)
JP (1) JP5775551B2 (https=)
KR (1) KR101586122B1 (https=)
CN (1) CN104124141B (https=)
SG (1) SG2013069778A (https=)
TW (1) TWI487008B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201601015RA (en) * 2013-08-16 2016-03-30 Entegris Inc Silicon implantation in substrates and provision of silicon precursor compositions therefor
CN105239048B (zh) * 2015-10-09 2018-11-09 北京大学深圳研究生院 一种金属等离子体源及其应用
US9818570B2 (en) * 2015-10-23 2017-11-14 Varian Semiconductor Equipment Associates, Inc. Ion source for multiple charged species
US20170294289A1 (en) 2016-04-11 2017-10-12 Aaron Reinicker Boron compositions suitable for ion implantation to produce a boron-containing ion beam current
CN207458886U (zh) * 2017-06-16 2018-06-05 上海凯世通半导体股份有限公司 束流比例检测装置
US10597773B2 (en) * 2017-08-22 2020-03-24 Praxair Technology, Inc. Antimony-containing materials for ion implantation
WO2019221812A1 (en) * 2018-05-17 2019-11-21 Entegris, Inc. Germanium tetraflouride and hydrogen mixtures for an ion implantation system
US10923309B2 (en) * 2018-11-01 2021-02-16 Applied Materials, Inc. GeH4/Ar plasma chemistry for ion implant productivity enhancement
WO2020123901A1 (en) * 2018-12-15 2020-06-18 Entegris, Inc. Fluorine ion implantation system with non-tungsten materials and methods of using
US10748738B1 (en) * 2019-03-18 2020-08-18 Applied Materials, Inc. Ion source with tubular cathode
US12278141B2 (en) * 2021-06-18 2025-04-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6007609A (en) 1997-12-18 1999-12-28 Uop Llc Pressurized container with restrictor tube having multiple capillary passages
US6045115A (en) 1998-04-17 2000-04-04 Uop Llc Fail-safe delivery arrangement for pressurized containers
US5937895A (en) 1998-04-17 1999-08-17 Uop Llc Fail-safe delivery valve for pressurized tanks
US6875986B1 (en) * 1999-04-28 2005-04-05 Kabushiki Kaisha Toshiba Ion generation method and filament for ion generation apparatus
JP3655491B2 (ja) * 1999-04-28 2005-06-02 株式会社東芝 イオン発生方法およびイオン照射方法
US20040171226A1 (en) * 2001-07-05 2004-09-02 Burden Stephen J. Isotopically pure silicon-on-insulator wafers and method of making same
US6960774B2 (en) * 2003-11-03 2005-11-01 Advanced Micro Devices, Inc. Fault detection and control methodologies for ion implantation processes, and system for performing same
KR100606032B1 (ko) * 2004-12-22 2006-07-28 동부일렉트로닉스 주식회사 이온 주입 장치의 최적화 방법
US7708028B2 (en) 2006-12-08 2010-05-04 Praxair Technology, Inc. Fail-safe vacuum actuated valve for high pressure delivery systems
US7905247B2 (en) 2008-06-20 2011-03-15 Praxair Technology, Inc. Vacuum actuated valve for high capacity storage and delivery systems
US8062965B2 (en) * 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
TWI466179B (zh) * 2010-02-26 2014-12-21 尖端科技材料股份有限公司 用以增進離子植入系統中之離子源的壽命及性能之方法與設備

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