JP2014216311A5 - - Google Patents

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Publication number
JP2014216311A5
JP2014216311A5 JP2013193605A JP2013193605A JP2014216311A5 JP 2014216311 A5 JP2014216311 A5 JP 2014216311A5 JP 2013193605 A JP2013193605 A JP 2013193605A JP 2013193605 A JP2013193605 A JP 2013193605A JP 2014216311 A5 JP2014216311 A5 JP 2014216311A5
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JP
Japan
Prior art keywords
dopant gas
enriched
ritomi
flow rate
ion source
Prior art date
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Application number
JP2013193605A
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English (en)
Japanese (ja)
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JP2014216311A (ja
JP5775551B2 (ja
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Priority claimed from US13/869,456 external-priority patent/US8883620B1/en
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Publication of JP2014216311A publication Critical patent/JP2014216311A/ja
Publication of JP2014216311A5 publication Critical patent/JP2014216311A5/ja
Application granted granted Critical
Publication of JP5775551B2 publication Critical patent/JP5775551B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013193605A 2013-04-24 2013-09-19 イオン注入プロセスにおいて同位体的に富化されたレベルのドーパントガス組成物を用いる方法 Expired - Fee Related JP5775551B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/869,456 2013-04-24
US13/869,456 US8883620B1 (en) 2013-04-24 2013-04-24 Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process

Publications (3)

Publication Number Publication Date
JP2014216311A JP2014216311A (ja) 2014-11-17
JP2014216311A5 true JP2014216311A5 (https=) 2015-06-25
JP5775551B2 JP5775551B2 (ja) 2015-09-09

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ID=49162090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013193605A Expired - Fee Related JP5775551B2 (ja) 2013-04-24 2013-09-19 イオン注入プロセスにおいて同位体的に富化されたレベルのドーパントガス組成物を用いる方法

Country Status (7)

Country Link
US (1) US8883620B1 (https=)
EP (1) EP2796590A1 (https=)
JP (1) JP5775551B2 (https=)
KR (1) KR101586122B1 (https=)
CN (1) CN104124141B (https=)
SG (1) SG2013069778A (https=)
TW (1) TWI487008B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015023903A1 (en) 2013-08-16 2015-02-19 Entegris, Inc. Silicon implantation in substrates and provision of silicon precursor compositions therefor
CN105239048B (zh) * 2015-10-09 2018-11-09 北京大学深圳研究生院 一种金属等离子体源及其应用
US9818570B2 (en) * 2015-10-23 2017-11-14 Varian Semiconductor Equipment Associates, Inc. Ion source for multiple charged species
US20170294314A1 (en) 2016-04-11 2017-10-12 Aaron Reinicker Germanium compositions suitable for ion implantation to produce a germanium-containing ion beam current
CN207458887U (zh) * 2017-06-16 2018-06-05 上海凯世通半导体股份有限公司 离子注入设备
US10597773B2 (en) * 2017-08-22 2020-03-24 Praxair Technology, Inc. Antimony-containing materials for ion implantation
JP2021524648A (ja) * 2018-05-17 2021-09-13 インテグリス・インコーポレーテッド イオン注入システムのための四フッ化ゲルマニウムと水素の混合物
US10923309B2 (en) * 2018-11-01 2021-02-16 Applied Materials, Inc. GeH4/Ar plasma chemistry for ion implant productivity enhancement
CN113261073B (zh) * 2018-12-15 2024-07-16 恩特格里斯公司 利用非钨材料的氟离子植入系统和其使用方法
US10748738B1 (en) * 2019-03-18 2020-08-18 Applied Materials, Inc. Ion source with tubular cathode
US12278141B2 (en) * 2021-06-18 2025-04-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6007609A (en) 1997-12-18 1999-12-28 Uop Llc Pressurized container with restrictor tube having multiple capillary passages
US6045115A (en) 1998-04-17 2000-04-04 Uop Llc Fail-safe delivery arrangement for pressurized containers
US5937895A (en) 1998-04-17 1999-08-17 Uop Llc Fail-safe delivery valve for pressurized tanks
JP3655491B2 (ja) * 1999-04-28 2005-06-02 株式会社東芝 イオン発生方法およびイオン照射方法
US6875986B1 (en) * 1999-04-28 2005-04-05 Kabushiki Kaisha Toshiba Ion generation method and filament for ion generation apparatus
US20040171226A1 (en) * 2001-07-05 2004-09-02 Burden Stephen J. Isotopically pure silicon-on-insulator wafers and method of making same
US6960774B2 (en) * 2003-11-03 2005-11-01 Advanced Micro Devices, Inc. Fault detection and control methodologies for ion implantation processes, and system for performing same
KR100606032B1 (ko) * 2004-12-22 2006-07-28 동부일렉트로닉스 주식회사 이온 주입 장치의 최적화 방법
US7708028B2 (en) 2006-12-08 2010-05-04 Praxair Technology, Inc. Fail-safe vacuum actuated valve for high pressure delivery systems
US7905247B2 (en) 2008-06-20 2011-03-15 Praxair Technology, Inc. Vacuum actuated valve for high capacity storage and delivery systems
US8062965B2 (en) * 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
TWI386983B (zh) * 2010-02-26 2013-02-21 尖端科技材料股份有限公司 用以增進離子植入系統中之離子源的壽命及性能之方法與設備

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