JP2014216311A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2014216311A5 JP2014216311A5 JP2013193605A JP2013193605A JP2014216311A5 JP 2014216311 A5 JP2014216311 A5 JP 2014216311A5 JP 2013193605 A JP2013193605 A JP 2013193605A JP 2013193605 A JP2013193605 A JP 2013193605A JP 2014216311 A5 JP2014216311 A5 JP 2014216311A5
- Authority
- JP
- Japan
- Prior art keywords
- dopant gas
- enriched
- ritomi
- flow rate
- ion source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002019 doping agent Substances 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 4
- 235000009508 confectionery Nutrition 0.000 description 2
- 230000000875 corresponding Effects 0.000 description 2
- 235000004431 Linum usitatissimum Nutrition 0.000 description 1
- 240000006240 Linum usitatissimum Species 0.000 description 1
- 235000004426 flaxseed Nutrition 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
Description
第一の態様において、イオン源の安定性を維持するのに十分な流量で富化ドーパントガスを導入し、ここで、該富化ドーパントガスは、その中に、天然存在量レベルの９０％以上の同位体の富化レベルを有し；該流量において対応するあまり富化されていないまたは非富化ドーパントガスで利用される電力レベルと比較して、イオン源の低下した全電力レベルで操作し；次いで、ドーパントガスをイオン化して、該流量において対応するあまり富化されていないまたは非富化ドーパントガスを用いて生じるビーム電流を発生させ、かつそれを維持することを含む、富化ドーパントガスを用いる方法が提供される。 In a first embodiment, by introducing enriched dopant gas at a rate sufficient to maintain the stability of the ion source, wherein, 該富 of dopant gas therein, the natural abundance level of 90% or more has a wealth levels of isotopes; compared corresponding linseed Ritomi of which are not or not enriched dopant gas utilized is the power level in the flow rate, the total power level with reduced ion source operate; then includes a dopant gas is ionized, the beam current generated by using the corresponding non-sweet Ritomi or non-enriched dopant gas is generated in the flow rate, and to keep it, wealth A method using a fluorinated dopant gas is provided.
第三の態様において、ウエハに注入すべき原子種を有するドーパントガスを選択し；該ドーパントガスの質量同位体を、その中に天然存在量レベルを超える少なくとも９０％に富化されるように選択し；亜大気圧貯蔵および送達容器中に該ドーパントガスの質量同位体を供し；イオン源の安定性を維持するのに十分な流量にて該ドーパントガスの質量同位体を導入し；対応するあまり富化されていないまたは非富化ドーパントガスで利用される電力レベルと比較して、該イオン源の低下した電力レベルで操作し；次いで、該ドーパントガスをイオン化して、該流量において対応するあまり富化されていないまたは非富化ドーパントガスを用いて生じたビーム電流を維持する工程を含む、イオン注入プロセス用の同位体的に富化されたドーパントガスを用いる方法が提供される。 In a third embodiment, a dopant gas having an atomic species to be implanted into the wafer is selected; the mass isotope of the dopant gas is selected to be enriched therein by at least 90% above the natural abundance level Providing the dopant gas mass isotope in a subatmospheric storage and delivery vessel; introducing the dopant gas mass isotope at a flow rate sufficient to maintain ion source stability; compared to Ritomi of which are not or not enriched dopant gas utilized is the power level, by operating at a reduced power level of the ion source; then, the dopant gas is ionized, corresponds in the flow rate comprising the step of maintaining the beam current generated by using sweet Ritomi of which are not or not enriched dopant gas, which is isotopically enriched for ion implantation process dopant A method using a gas is provided.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/869,456 US8883620B1 (en) | 2013-04-24 | 2013-04-24 | Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process |
| US13/869,456 | 2013-04-24 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014216311A JP2014216311A (en) | 2014-11-17 |
| JP2014216311A5 true JP2014216311A5 (en) | 2015-06-25 |
| JP5775551B2 JP5775551B2 (en) | 2015-09-09 |
Family
ID=49162090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013193605A Expired - Fee Related JP5775551B2 (en) | 2013-04-24 | 2013-09-19 | Method of using isotopically enriched levels of dopant gas composition in an ion implantation process |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8883620B1 (en) |
| EP (1) | EP2796590A1 (en) |
| JP (1) | JP5775551B2 (en) |
| KR (1) | KR101586122B1 (en) |
| CN (1) | CN104124141B (en) |
| SG (1) | SG2013069778A (en) |
| TW (1) | TWI487008B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11062906B2 (en) | 2013-08-16 | 2021-07-13 | Entegris, Inc. | Silicon implantation in substrates and provision of silicon precursor compositions therefor |
| CN105239048B (en) * | 2015-10-09 | 2018-11-09 | 北京大学深圳研究生院 | A kind of metal plasma source and its application |
| US9818570B2 (en) * | 2015-10-23 | 2017-11-14 | Varian Semiconductor Equipment Associates, Inc. | Ion source for multiple charged species |
| US20170292186A1 (en) | 2016-04-11 | 2017-10-12 | Aaron Reinicker | Dopant compositions for ion implantation |
| CN207458886U (en) * | 2017-06-16 | 2018-06-05 | 上海凯世通半导体股份有限公司 | Line ratio detection device |
| US10597773B2 (en) * | 2017-08-22 | 2020-03-24 | Praxair Technology, Inc. | Antimony-containing materials for ion implantation |
| US11299802B2 (en) | 2018-05-17 | 2022-04-12 | Entegris, Inc. | Germanium tetraflouride and hydrogen mixtures for an ion implantation system |
| US10923309B2 (en) * | 2018-11-01 | 2021-02-16 | Applied Materials, Inc. | GeH4/Ar plasma chemistry for ion implant productivity enhancement |
| EP3895198A4 (en) * | 2018-12-15 | 2022-10-05 | Entegris, Inc. | Fluorine ion implantation method and system |
| US10748738B1 (en) | 2019-03-18 | 2020-08-18 | Applied Materials, Inc. | Ion source with tubular cathode |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6007609A (en) | 1997-12-18 | 1999-12-28 | Uop Llc | Pressurized container with restrictor tube having multiple capillary passages |
| US5937895A (en) | 1998-04-17 | 1999-08-17 | Uop Llc | Fail-safe delivery valve for pressurized tanks |
| US6045115A (en) | 1998-04-17 | 2000-04-04 | Uop Llc | Fail-safe delivery arrangement for pressurized containers |
| US6875986B1 (en) * | 1999-04-28 | 2005-04-05 | Kabushiki Kaisha Toshiba | Ion generation method and filament for ion generation apparatus |
| JP3655491B2 (en) * | 1999-04-28 | 2005-06-02 | 株式会社東芝 | Ion generation method and ion irradiation method |
| US20040171226A1 (en) * | 2001-07-05 | 2004-09-02 | Burden Stephen J. | Isotopically pure silicon-on-insulator wafers and method of making same |
| US6960774B2 (en) * | 2003-11-03 | 2005-11-01 | Advanced Micro Devices, Inc. | Fault detection and control methodologies for ion implantation processes, and system for performing same |
| KR100606032B1 (en) * | 2004-12-22 | 2006-07-28 | 동부일렉트로닉스 주식회사 | Method for optimizing of ion the implanter |
| US7708028B2 (en) | 2006-12-08 | 2010-05-04 | Praxair Technology, Inc. | Fail-safe vacuum actuated valve for high pressure delivery systems |
| US7905247B2 (en) | 2008-06-20 | 2011-03-15 | Praxair Technology, Inc. | Vacuum actuated valve for high capacity storage and delivery systems |
| US8062965B2 (en) * | 2009-10-27 | 2011-11-22 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| TWI466179B (en) * | 2010-02-26 | 2014-12-21 | Advanced Tech Materials | Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system |
-
2013
- 2013-04-24 US US13/869,456 patent/US8883620B1/en active Active
- 2013-09-14 TW TW102133376A patent/TWI487008B/en active
- 2013-09-16 EP EP20130184609 patent/EP2796590A1/en not_active Withdrawn
- 2013-09-16 SG SG2013069778A patent/SG2013069778A/en unknown
- 2013-09-19 JP JP2013193605A patent/JP5775551B2/en not_active Expired - Fee Related
- 2013-09-23 CN CN201310561130.8A patent/CN104124141B/en active Active
- 2013-10-31 KR KR1020130130863A patent/KR101586122B1/en active IP Right Grant
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2014216311A5 (en) | ||
| PH12015501621A1 (en) | Process for treatment by a beam of mono- or multicharged ions of a gas to produce antireflective glass materials | |
| Badger et al. | Next-to-leading order QCD corrections to di-photon production in association with up to three jets at the Large Hadron Collider | |
| JP2019517158A5 (en) | ||
| MY173480A (en) | Supply source and method for enriched selenium ion implantation | |
| SG2013069778A (en) | Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process | |
| Kwiatkowski | Ion traps for precision experiments at rare-isotope-beam facilities | |
| Carbone et al. | Partitioning autotrophic and heterotrophic respiration to improve simulations of terrestrial carbon fluxes and stocks | |
| Burk et al. | A system for field gas-extraction of 85 Kr, 39 Ar and 81 Kr using SuperPhobic membrane contactors | |
| Gee et al. | Study and Comparison of the Method of Moments and the Single Level Fast Multipole Method for 2D Space Charge Tracking | |
| Drake et al. | Recoil effects due to electron shake-off following the beta decay of 6 He | |
| Holt | Three-nucleon forces for exotic oxygen isotopes | |
| Dycus et al. | Simulation of Statistical Neutron Capture Processes Using Monte Carlo Methods with TALYS | |
| Chipps | The JENSA Gas Jet Target | |
| JP2011149933A5 (en) | Analysis method of hydrogen concentration in oxide semiconductor | |
| Brambilla et al. | Pulsar magnetosphere: a new view from PIC simulations | |
| Eliseev et al. | ACCOUNT OF NONLOCAL IONIZATION AND SLOW ELECTRON ENERGY BALANCE IN GLOW DISCHARGE MODELS | |
| Kopytin et al. | Dependence of branching coefficients for multidecay nuclei from K-shell population of their atoms in strongly heated medium | |
| Delahaye | Charge breeding of exotic isotopes for EURISOL: the EMILIE project | |
| Foster et al. | Upgrade of the TITAN EBIT High Voltage Operation | |
| Jena et al. | Study of ion trapping phenomena in Indus-2 storage ring | |
| Stotler et al. | Variable Charge State Impurities in Coupled Kinetic Plasma-Kinetic Neutral Transport Simulations | |
| Aslanyan et al. | Atomic rate coefficients in a degenerate plasma | |
| Gibson et al. | Inner-orbital ionization of iodine | |
| Spencer | Ion extraction and sheath physics in the Inductively Coupled Plasma Mass Spectrometer |