JP2019517158A5 - - Google Patents

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Publication number
JP2019517158A5
JP2019517158A5 JP2019503647A JP2019503647A JP2019517158A5 JP 2019517158 A5 JP2019517158 A5 JP 2019517158A5 JP 2019503647 A JP2019503647 A JP 2019503647A JP 2019503647 A JP2019503647 A JP 2019503647A JP 2019517158 A5 JP2019517158 A5 JP 2019517158A5
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JP
Japan
Prior art keywords
composition
ion beam
beam current
dopant source
species
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JP2019503647A
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English (en)
Japanese (ja)
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JP2019517158A (ja
JP6990691B2 (ja
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Priority claimed from US15/483,522 external-priority patent/US20170292186A1/en
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Publication of JP2019517158A publication Critical patent/JP2019517158A/ja
Publication of JP2019517158A5 publication Critical patent/JP2019517158A5/ja
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Publication of JP6990691B2 publication Critical patent/JP6990691B2/ja
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JP2019503647A 2016-04-11 2017-04-11 イオン注入のためのドーパント組成物 Active JP6990691B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US201662321069P 2016-04-11 2016-04-11
US62/321,069 2016-04-11
US15/483,522 US20170292186A1 (en) 2016-04-11 2017-04-10 Dopant compositions for ion implantation
US15/483,522 2017-04-10
US15/483,479 2017-04-10
US15/483,479 US20170294289A1 (en) 2016-04-11 2017-04-10 Boron compositions suitable for ion implantation to produce a boron-containing ion beam current
US15/483,448 2017-04-10
US15/483,448 US20170294314A1 (en) 2016-04-11 2017-04-10 Germanium compositions suitable for ion implantation to produce a germanium-containing ion beam current
PCT/US2017/026913 WO2017180562A1 (en) 2016-04-11 2017-04-11 Dopant compositions for ion implantation

Publications (3)

Publication Number Publication Date
JP2019517158A JP2019517158A (ja) 2019-06-20
JP2019517158A5 true JP2019517158A5 (https=) 2020-05-21
JP6990691B2 JP6990691B2 (ja) 2022-02-15

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ID=59998279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019503647A Active JP6990691B2 (ja) 2016-04-11 2017-04-11 イオン注入のためのドーパント組成物

Country Status (8)

Country Link
US (4) US20170294289A1 (https=)
EP (1) EP3443137A1 (https=)
JP (1) JP6990691B2 (https=)
KR (2) KR102443564B1 (https=)
CN (1) CN109362231B (https=)
SG (2) SG11201808852YA (https=)
TW (3) TWI743105B (https=)
WO (1) WO2017180562A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11098402B2 (en) * 2017-08-22 2021-08-24 Praxair Technology, Inc. Storage and delivery of antimony-containing materials to an ion implanter
WO2019221812A1 (en) * 2018-05-17 2019-11-21 Entegris, Inc. Germanium tetraflouride and hydrogen mixtures for an ion implantation system
US10892137B2 (en) * 2018-09-12 2021-01-12 Entegris, Inc. Ion implantation processes and apparatus using gallium
US10923309B2 (en) * 2018-11-01 2021-02-16 Applied Materials, Inc. GeH4/Ar plasma chemistry for ion implant productivity enhancement
US11232925B2 (en) 2019-09-03 2022-01-25 Applied Materials, Inc. System and method for improved beam current from an ion source
US11120966B2 (en) * 2019-09-03 2021-09-14 Applied Materials, Inc. System and method for improved beam current from an ion source
WO2021232036A1 (en) * 2020-05-11 2021-11-18 Praxair Technology, Inc. Storage and delivery of antimony-containing materials to an ion implanter
EP4222773A4 (en) 2020-10-02 2025-04-30 Entegris, Inc. METHODS AND SYSTEMS FOR THE PRODUCTION OF ALUMINUM IONS
EP4710359A1 (en) * 2023-05-08 2026-03-18 Entegris, Inc. Ion implantation system and related methods

Family Cites Families (22)

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Publication number Priority date Publication date Assignee Title
CA1305350C (en) * 1986-04-08 1992-07-21 Hiroshi Amada Light receiving member
US4891330A (en) * 1987-07-27 1990-01-02 Energy Conversion Devices, Inc. Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements
US6007609A (en) 1997-12-18 1999-12-28 Uop Llc Pressurized container with restrictor tube having multiple capillary passages
US5937895A (en) 1998-04-17 1999-08-17 Uop Llc Fail-safe delivery valve for pressurized tanks
US6045115A (en) 1998-04-17 2000-04-04 Uop Llc Fail-safe delivery arrangement for pressurized containers
US6756600B2 (en) * 1999-02-19 2004-06-29 Advanced Micro Devices, Inc. Ion implantation with improved ion source life expectancy
US7396381B2 (en) * 2004-07-08 2008-07-08 Air Products And Chemicals, Inc. Storage and delivery systems for gases held in liquid medium
JP2008124111A (ja) * 2006-11-09 2008-05-29 Nissin Electric Co Ltd プラズマｃｖｄ法によるシリコン系薄膜の形成方法
US7732309B2 (en) * 2006-12-08 2010-06-08 Applied Materials, Inc. Plasma immersed ion implantation process
US7708028B2 (en) 2006-12-08 2010-05-04 Praxair Technology, Inc. Fail-safe vacuum actuated valve for high pressure delivery systems
US7655931B2 (en) * 2007-03-29 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source with gas mixing
US7905247B2 (en) 2008-06-20 2011-03-15 Praxair Technology, Inc. Vacuum actuated valve for high capacity storage and delivery systems
EP2815424B1 (en) * 2012-02-14 2017-08-16 Entegris Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
SG11201500684RA (en) * 2012-08-28 2015-04-29 Praxair Technology Inc Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation
SG11201506605XA (en) * 2013-03-05 2015-09-29 Entegris Inc Ion implantation compositions, systems, and methods
US8883620B1 (en) * 2013-04-24 2014-11-11 Praxair Technology, Inc. Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process
CN105431927A (zh) * 2013-05-21 2016-03-23 恩特格里斯公司 富集硅的前体组合物及使用其的设备和方法
US9165773B2 (en) 2013-05-28 2015-10-20 Praxair Technology, Inc. Aluminum dopant compositions, delivery package and method of use
SG11201601015RA (en) * 2013-08-16 2016-03-30 Entegris Inc Silicon implantation in substrates and provision of silicon precursor compositions therefor
US9209033B2 (en) * 2013-08-21 2015-12-08 Tel Epion Inc. GCIB etching method for adjusting fin height of finFET devices
CN106536377B (zh) * 2014-06-13 2021-01-29 恩特格里斯公司 压力调节式流体储存与施配容器的基于吸附剂的压力稳定
US9909670B2 (en) 2015-03-04 2018-03-06 Praxair Technology, Inc. Modified vacuum actuated valve assembly and sealing mechanism for improved flow stability for fluids sub-atmospherically dispensed from storage and delivery systems

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