JP2019517158A5 - - Google Patents
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- Publication number
- JP2019517158A5 JP2019517158A5 JP2019503647A JP2019503647A JP2019517158A5 JP 2019517158 A5 JP2019517158 A5 JP 2019517158A5 JP 2019503647 A JP2019503647 A JP 2019503647A JP 2019503647 A JP2019503647 A JP 2019503647A JP 2019517158 A5 JP2019517158 A5 JP 2019517158A5
- Authority
- JP
- Japan
- Prior art keywords
- composition
- ion beam
- beam current
- dopant source
- species
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010884 ion-beam technique Methods 0.000 claims 19
- 239000002019 doping agent Substances 0.000 claims 17
- 239000003085 diluting agent Substances 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 1
- 239000012634 fragment Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- 229910052743 krypton Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- 230000000717 retained effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229910052724 xenon Inorganic materials 0.000 claims 1
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662321069P | 2016-04-11 | 2016-04-11 | |
| US62/321,069 | 2016-04-11 | ||
| US15/483,448 | 2017-04-10 | ||
| US15/483,448 US20170294314A1 (en) | 2016-04-11 | 2017-04-10 | Germanium compositions suitable for ion implantation to produce a germanium-containing ion beam current |
| US15/483,522 US20170292186A1 (en) | 2016-04-11 | 2017-04-10 | Dopant compositions for ion implantation |
| US15/483,522 | 2017-04-10 | ||
| US15/483,479 | 2017-04-10 | ||
| US15/483,479 US20170294289A1 (en) | 2016-04-11 | 2017-04-10 | Boron compositions suitable for ion implantation to produce a boron-containing ion beam current |
| PCT/US2017/026913 WO2017180562A1 (en) | 2016-04-11 | 2017-04-11 | Dopant compositions for ion implantation |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019517158A JP2019517158A (ja) | 2019-06-20 |
| JP2019517158A5 true JP2019517158A5 (https=) | 2020-05-21 |
| JP6990691B2 JP6990691B2 (ja) | 2022-02-15 |
Family
ID=59998279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019503647A Active JP6990691B2 (ja) | 2016-04-11 | 2017-04-11 | イオン注入のためのドーパント組成物 |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US20170294314A1 (https=) |
| EP (1) | EP3443137A1 (https=) |
| JP (1) | JP6990691B2 (https=) |
| KR (2) | KR102443564B1 (https=) |
| CN (1) | CN109362231B (https=) |
| SG (2) | SG10202010058QA (https=) |
| TW (3) | TWI724152B (https=) |
| WO (1) | WO2017180562A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11098402B2 (en) * | 2017-08-22 | 2021-08-24 | Praxair Technology, Inc. | Storage and delivery of antimony-containing materials to an ion implanter |
| JP2021524648A (ja) * | 2018-05-17 | 2021-09-13 | インテグリス・インコーポレーテッド | イオン注入システムのための四フッ化ゲルマニウムと水素の混合物 |
| US10892137B2 (en) * | 2018-09-12 | 2021-01-12 | Entegris, Inc. | Ion implantation processes and apparatus using gallium |
| US10923309B2 (en) * | 2018-11-01 | 2021-02-16 | Applied Materials, Inc. | GeH4/Ar plasma chemistry for ion implant productivity enhancement |
| US11120966B2 (en) * | 2019-09-03 | 2021-09-14 | Applied Materials, Inc. | System and method for improved beam current from an ion source |
| US11232925B2 (en) | 2019-09-03 | 2022-01-25 | Applied Materials, Inc. | System and method for improved beam current from an ion source |
| WO2021232036A1 (en) * | 2020-05-11 | 2021-11-18 | Praxair Technology, Inc. | Storage and delivery of antimony-containing materials to an ion implanter |
| EP4222773A4 (en) | 2020-10-02 | 2025-04-30 | Entegris, Inc. | METHODS AND SYSTEMS FOR THE PRODUCTION OF ALUMINUM IONS |
| KR20260003811A (ko) * | 2023-05-08 | 2026-01-07 | 엔테그리스, 아이엔씨. | 이온 주입 시스템 및 관련 방법 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1305350C (en) * | 1986-04-08 | 1992-07-21 | Hiroshi Amada | Light receiving member |
| US4891330A (en) * | 1987-07-27 | 1990-01-02 | Energy Conversion Devices, Inc. | Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements |
| US6007609A (en) | 1997-12-18 | 1999-12-28 | Uop Llc | Pressurized container with restrictor tube having multiple capillary passages |
| US5937895A (en) | 1998-04-17 | 1999-08-17 | Uop Llc | Fail-safe delivery valve for pressurized tanks |
| US6045115A (en) | 1998-04-17 | 2000-04-04 | Uop Llc | Fail-safe delivery arrangement for pressurized containers |
| US6756600B2 (en) * | 1999-02-19 | 2004-06-29 | Advanced Micro Devices, Inc. | Ion implantation with improved ion source life expectancy |
| US7396381B2 (en) * | 2004-07-08 | 2008-07-08 | Air Products And Chemicals, Inc. | Storage and delivery systems for gases held in liquid medium |
| JP2008124111A (ja) * | 2006-11-09 | 2008-05-29 | Nissin Electric Co Ltd | プラズマｃｖｄ法によるシリコン系薄膜の形成方法 |
| US7732309B2 (en) * | 2006-12-08 | 2010-06-08 | Applied Materials, Inc. | Plasma immersed ion implantation process |
| US7708028B2 (en) | 2006-12-08 | 2010-05-04 | Praxair Technology, Inc. | Fail-safe vacuum actuated valve for high pressure delivery systems |
| US7655931B2 (en) | 2007-03-29 | 2010-02-02 | Varian Semiconductor Equipment Associates, Inc. | Techniques for improving the performance and extending the lifetime of an ion source with gas mixing |
| US7905247B2 (en) | 2008-06-20 | 2011-03-15 | Praxair Technology, Inc. | Vacuum actuated valve for high capacity storage and delivery systems |
| EP3267470A3 (en) * | 2012-02-14 | 2018-04-18 | Entegris, Inc. | Carbon dopant gas and co-flow for implant beam and source life performance improvement |
| SG11201500684RA (en) * | 2012-08-28 | 2015-04-29 | Praxair Technology Inc | Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation |
| JP2016514352A (ja) * | 2013-03-05 | 2016-05-19 | インテグリス・インコーポレーテッド | イオン注入のための組成物、システムおよび方法 |
| US8883620B1 (en) * | 2013-04-24 | 2014-11-11 | Praxair Technology, Inc. | Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process |
| WO2014190087A1 (en) * | 2013-05-21 | 2014-11-27 | Advanced Technology Materials, Inc. | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
| US9165773B2 (en) | 2013-05-28 | 2015-10-20 | Praxair Technology, Inc. | Aluminum dopant compositions, delivery package and method of use |
| WO2015023903A1 (en) * | 2013-08-16 | 2015-02-19 | Entegris, Inc. | Silicon implantation in substrates and provision of silicon precursor compositions therefor |
| US9209033B2 (en) * | 2013-08-21 | 2015-12-08 | Tel Epion Inc. | GCIB etching method for adjusting fin height of finFET devices |
| WO2015191929A1 (en) * | 2014-06-13 | 2015-12-17 | Entegris, Inc. | Adsorbent-based pressure stabilzation of pressure-regulated fluid storage and dispensing vessels |
| US9909670B2 (en) | 2015-03-04 | 2018-03-06 | Praxair Technology, Inc. | Modified vacuum actuated valve assembly and sealing mechanism for improved flow stability for fluids sub-atmospherically dispensed from storage and delivery systems |
-
2017
- 2017-04-10 US US15/483,448 patent/US20170294314A1/en not_active Abandoned
- 2017-04-10 US US15/483,522 patent/US20170292186A1/en not_active Abandoned
- 2017-04-10 US US15/483,479 patent/US20170294289A1/en not_active Abandoned
- 2017-04-11 TW TW106112052A patent/TWI724152B/zh active
- 2017-04-11 TW TW106112054A patent/TWI743105B/zh active
- 2017-04-11 SG SG10202010058QA patent/SG10202010058QA/en unknown
- 2017-04-11 KR KR1020187032524A patent/KR102443564B1/ko active Active
- 2017-04-11 SG SG11201808852YA patent/SG11201808852YA/en unknown
- 2017-04-11 CN CN201780029981.4A patent/CN109362231B/zh active Active
- 2017-04-11 TW TW106112055A patent/TWI826349B/zh active
- 2017-04-11 WO PCT/US2017/026913 patent/WO2017180562A1/en not_active Ceased
- 2017-04-11 EP EP17719778.7A patent/EP3443137A1/en not_active Withdrawn
- 2017-04-11 KR KR1020227031380A patent/KR20220129108A/ko not_active Ceased
- 2017-04-11 JP JP2019503647A patent/JP6990691B2/ja active Active
-
2019
- 2019-07-23 US US16/519,180 patent/US20200013621A1/en not_active Abandoned
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