SG10202010058QA - Dopant compositions for ion implantation - Google Patents
Dopant compositions for ion implantationInfo
- Publication number
- SG10202010058QA SG10202010058QA SG10202010058QA SG10202010058QA SG10202010058QA SG 10202010058Q A SG10202010058Q A SG 10202010058QA SG 10202010058Q A SG10202010058Q A SG 10202010058QA SG 10202010058Q A SG10202010058Q A SG 10202010058QA SG 10202010058Q A SG10202010058Q A SG 10202010058QA
- Authority
- SG
- Singapore
- Prior art keywords
- ion implantation
- dopant compositions
- dopant
- compositions
- implantation
- Prior art date
Links
- 239000002019 doping agent Substances 0.000 title 1
- 238000005468 ion implantation Methods 0.000 title 1
- 239000000203 mixture Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662321069P | 2016-04-11 | 2016-04-11 | |
| US15/483,448 US20170294314A1 (en) | 2016-04-11 | 2017-04-10 | Germanium compositions suitable for ion implantation to produce a germanium-containing ion beam current |
| US15/483,479 US20170294289A1 (en) | 2016-04-11 | 2017-04-10 | Boron compositions suitable for ion implantation to produce a boron-containing ion beam current |
| US15/483,522 US20170292186A1 (en) | 2016-04-11 | 2017-04-10 | Dopant compositions for ion implantation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10202010058QA true SG10202010058QA (en) | 2020-11-27 |
Family
ID=59998279
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201808852YA SG11201808852YA (en) | 2016-04-11 | 2017-04-11 | Dopant compositions for ion implantation |
| SG10202010058QA SG10202010058QA (en) | 2016-04-11 | 2017-04-11 | Dopant compositions for ion implantation |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201808852YA SG11201808852YA (en) | 2016-04-11 | 2017-04-11 | Dopant compositions for ion implantation |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US20170294289A1 (en) |
| EP (1) | EP3443137A1 (en) |
| JP (1) | JP6990691B2 (en) |
| KR (2) | KR20220129108A (en) |
| CN (1) | CN109362231B (en) |
| SG (2) | SG11201808852YA (en) |
| TW (3) | TWI743105B (en) |
| WO (1) | WO2017180562A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11098402B2 (en) * | 2017-08-22 | 2021-08-24 | Praxair Technology, Inc. | Storage and delivery of antimony-containing materials to an ion implanter |
| KR20200144151A (en) * | 2018-05-17 | 2020-12-28 | 엔테그리스, 아이엔씨. | Germanium tetrafluoride and hydrogen mixture for ion implantation systems |
| US10892137B2 (en) * | 2018-09-12 | 2021-01-12 | Entegris, Inc. | Ion implantation processes and apparatus using gallium |
| US10923309B2 (en) * | 2018-11-01 | 2021-02-16 | Applied Materials, Inc. | GeH4/Ar plasma chemistry for ion implant productivity enhancement |
| US11232925B2 (en) | 2019-09-03 | 2022-01-25 | Applied Materials, Inc. | System and method for improved beam current from an ion source |
| US11120966B2 (en) * | 2019-09-03 | 2021-09-14 | Applied Materials, Inc. | System and method for improved beam current from an ion source |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1305350C (en) * | 1986-04-08 | 1992-07-21 | Hiroshi Amada | Light receiving member |
| US4891330A (en) * | 1987-07-27 | 1990-01-02 | Energy Conversion Devices, Inc. | Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements |
| US6007609A (en) | 1997-12-18 | 1999-12-28 | Uop Llc | Pressurized container with restrictor tube having multiple capillary passages |
| US6045115A (en) | 1998-04-17 | 2000-04-04 | Uop Llc | Fail-safe delivery arrangement for pressurized containers |
| US5937895A (en) | 1998-04-17 | 1999-08-17 | Uop Llc | Fail-safe delivery valve for pressurized tanks |
| US6756600B2 (en) * | 1999-02-19 | 2004-06-29 | Advanced Micro Devices, Inc. | Ion implantation with improved ion source life expectancy |
| US7396381B2 (en) * | 2004-07-08 | 2008-07-08 | Air Products And Chemicals, Inc. | Storage and delivery systems for gases held in liquid medium |
| JP2008124111A (en) * | 2006-11-09 | 2008-05-29 | Nissin Electric Co Ltd | Method for forming silicon thin film by plasma cvd method |
| US7708028B2 (en) | 2006-12-08 | 2010-05-04 | Praxair Technology, Inc. | Fail-safe vacuum actuated valve for high pressure delivery systems |
| US7732309B2 (en) * | 2006-12-08 | 2010-06-08 | Applied Materials, Inc. | Plasma immersed ion implantation process |
| US7655931B2 (en) * | 2007-03-29 | 2010-02-02 | Varian Semiconductor Equipment Associates, Inc. | Techniques for improving the performance and extending the lifetime of an ion source with gas mixing |
| US7905247B2 (en) | 2008-06-20 | 2011-03-15 | Praxair Technology, Inc. | Vacuum actuated valve for high capacity storage and delivery systems |
| KR20140133571A (en) * | 2012-02-14 | 2014-11-19 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Carbon dopant gas and co-flow for implant beam and source life performance improvement |
| CN104584183B (en) * | 2012-08-28 | 2017-10-10 | 普莱克斯技术有限公司 | For ion beam current and the composition containing silicon dopant of performance during improving Si ion implantation, the system and method using said composition |
| CN105453225B (en) * | 2013-03-05 | 2018-08-28 | 恩特格里斯公司 | Ion implanting composition, system and method |
| US8883620B1 (en) * | 2013-04-24 | 2014-11-11 | Praxair Technology, Inc. | Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process |
| SG11201506474WA (en) * | 2013-05-21 | 2015-09-29 | Entegris Inc | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
| US9165773B2 (en) | 2013-05-28 | 2015-10-20 | Praxair Technology, Inc. | Aluminum dopant compositions, delivery package and method of use |
| SG11201601015RA (en) * | 2013-08-16 | 2016-03-30 | Entegris Inc | Silicon implantation in substrates and provision of silicon precursor compositions therefor |
| US9209033B2 (en) * | 2013-08-21 | 2015-12-08 | Tel Epion Inc. | GCIB etching method for adjusting fin height of finFET devices |
| KR20210126145A (en) * | 2014-06-13 | 2021-10-19 | 엔테그리스, 아이엔씨. | Adsorbent-based pressure stabilzation of pressure-regulated fluid storage and dispensing vessels |
| US9909670B2 (en) | 2015-03-04 | 2018-03-06 | Praxair Technology, Inc. | Modified vacuum actuated valve assembly and sealing mechanism for improved flow stability for fluids sub-atmospherically dispensed from storage and delivery systems |
-
2017
- 2017-04-10 US US15/483,479 patent/US20170294289A1/en not_active Abandoned
- 2017-04-10 US US15/483,522 patent/US20170292186A1/en not_active Abandoned
- 2017-04-10 US US15/483,448 patent/US20170294314A1/en not_active Abandoned
- 2017-04-11 SG SG11201808852YA patent/SG11201808852YA/en unknown
- 2017-04-11 KR KR1020227031380A patent/KR20220129108A/en not_active Application Discontinuation
- 2017-04-11 SG SG10202010058QA patent/SG10202010058QA/en unknown
- 2017-04-11 TW TW106112054A patent/TWI743105B/en active
- 2017-04-11 KR KR1020187032524A patent/KR102443564B1/en active IP Right Grant
- 2017-04-11 JP JP2019503647A patent/JP6990691B2/en active Active
- 2017-04-11 TW TW106112055A patent/TWI826349B/en active
- 2017-04-11 CN CN201780029981.4A patent/CN109362231B/en active Active
- 2017-04-11 EP EP17719778.7A patent/EP3443137A1/en not_active Withdrawn
- 2017-04-11 WO PCT/US2017/026913 patent/WO2017180562A1/en active Application Filing
- 2017-04-11 TW TW106112052A patent/TWI724152B/en active
-
2019
- 2019-07-23 US US16/519,180 patent/US20200013621A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CN109362231A (en) | 2019-02-19 |
| TWI724152B (en) | 2021-04-11 |
| TW201807234A (en) | 2018-03-01 |
| TWI743105B (en) | 2021-10-21 |
| KR20220129108A (en) | 2022-09-22 |
| CN109362231B (en) | 2022-12-27 |
| TW201807235A (en) | 2018-03-01 |
| JP2019517158A (en) | 2019-06-20 |
| TW201807236A (en) | 2018-03-01 |
| WO2017180562A1 (en) | 2017-10-19 |
| KR20180132133A (en) | 2018-12-11 |
| US20170292186A1 (en) | 2017-10-12 |
| SG11201808852YA (en) | 2018-11-29 |
| US20170294289A1 (en) | 2017-10-12 |
| EP3443137A1 (en) | 2019-02-20 |
| US20200013621A1 (en) | 2020-01-09 |
| TWI826349B (en) | 2023-12-21 |
| KR102443564B1 (en) | 2022-09-16 |
| US20170294314A1 (en) | 2017-10-12 |
| JP6990691B2 (en) | 2022-02-15 |
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