TWI724152B - 適用於離子植入以產生含硼離子束電流之硼組成物 - Google Patents

適用於離子植入以產生含硼離子束電流之硼組成物 Download PDF

Info

Publication number
TWI724152B
TWI724152B TW106112052A TW106112052A TWI724152B TW I724152 B TWI724152 B TW I724152B TW 106112052 A TW106112052 A TW 106112052A TW 106112052 A TW106112052 A TW 106112052A TW I724152 B TWI724152 B TW I724152B
Authority
TW
Taiwan
Prior art keywords
boron
species
ion beam
current
composition
Prior art date
Application number
TW106112052A
Other languages
English (en)
Chinese (zh)
Other versions
TW201807234A (zh
Inventor
亞倫 瑞尼克
夏威尼 辛哈
Original Assignee
美商普雷瑟科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商普雷瑟科技股份有限公司 filed Critical 美商普雷瑟科技股份有限公司
Publication of TW201807234A publication Critical patent/TW201807234A/zh
Application granted granted Critical
Publication of TWI724152B publication Critical patent/TWI724152B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
TW106112052A 2016-04-11 2017-04-11 適用於離子植入以產生含硼離子束電流之硼組成物 TWI724152B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662321069P 2016-04-11 2016-04-11
US62/321,069 2016-04-11
US15/483,479 2017-04-10
US15/483,479 US20170294289A1 (en) 2016-04-11 2017-04-10 Boron compositions suitable for ion implantation to produce a boron-containing ion beam current

Publications (2)

Publication Number Publication Date
TW201807234A TW201807234A (zh) 2018-03-01
TWI724152B true TWI724152B (zh) 2021-04-11

Family

ID=59998279

Family Applications (3)

Application Number Title Priority Date Filing Date
TW106112052A TWI724152B (zh) 2016-04-11 2017-04-11 適用於離子植入以產生含硼離子束電流之硼組成物
TW106112054A TWI743105B (zh) 2016-04-11 2017-04-11 用於離子植入之摻雜劑組成物
TW106112055A TWI826349B (zh) 2016-04-11 2017-04-11 適於離子植入以產生含鍺之離子束電流的鍺組成物

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW106112054A TWI743105B (zh) 2016-04-11 2017-04-11 用於離子植入之摻雜劑組成物
TW106112055A TWI826349B (zh) 2016-04-11 2017-04-11 適於離子植入以產生含鍺之離子束電流的鍺組成物

Country Status (8)

Country Link
US (4) US20170294314A1 (https=)
EP (1) EP3443137A1 (https=)
JP (1) JP6990691B2 (https=)
KR (2) KR102443564B1 (https=)
CN (1) CN109362231B (https=)
SG (2) SG10202010058QA (https=)
TW (3) TWI724152B (https=)
WO (1) WO2017180562A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11098402B2 (en) * 2017-08-22 2021-08-24 Praxair Technology, Inc. Storage and delivery of antimony-containing materials to an ion implanter
JP2021524648A (ja) * 2018-05-17 2021-09-13 インテグリス・インコーポレーテッド イオン注入システムのための四フッ化ゲルマニウムと水素の混合物
US10892137B2 (en) * 2018-09-12 2021-01-12 Entegris, Inc. Ion implantation processes and apparatus using gallium
US10923309B2 (en) * 2018-11-01 2021-02-16 Applied Materials, Inc. GeH4/Ar plasma chemistry for ion implant productivity enhancement
US11120966B2 (en) * 2019-09-03 2021-09-14 Applied Materials, Inc. System and method for improved beam current from an ion source
US11232925B2 (en) 2019-09-03 2022-01-25 Applied Materials, Inc. System and method for improved beam current from an ion source
WO2021232036A1 (en) * 2020-05-11 2021-11-18 Praxair Technology, Inc. Storage and delivery of antimony-containing materials to an ion implanter
EP4222773A4 (en) 2020-10-02 2025-04-30 Entegris, Inc. METHODS AND SYSTEMS FOR THE PRODUCTION OF ALUMINUM IONS
KR20260003811A (ko) * 2023-05-08 2026-01-07 엔테그리스, 아이엔씨. 이온 주입 시스템 및 관련 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101558183A (zh) * 2006-12-08 2009-10-14 应用材料股份有限公司 等离子体沉浸离子注入工艺

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1305350C (en) * 1986-04-08 1992-07-21 Hiroshi Amada Light receiving member
US4891330A (en) * 1987-07-27 1990-01-02 Energy Conversion Devices, Inc. Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements
US6007609A (en) 1997-12-18 1999-12-28 Uop Llc Pressurized container with restrictor tube having multiple capillary passages
US5937895A (en) 1998-04-17 1999-08-17 Uop Llc Fail-safe delivery valve for pressurized tanks
US6045115A (en) 1998-04-17 2000-04-04 Uop Llc Fail-safe delivery arrangement for pressurized containers
US6756600B2 (en) * 1999-02-19 2004-06-29 Advanced Micro Devices, Inc. Ion implantation with improved ion source life expectancy
US7396381B2 (en) * 2004-07-08 2008-07-08 Air Products And Chemicals, Inc. Storage and delivery systems for gases held in liquid medium
JP2008124111A (ja) * 2006-11-09 2008-05-29 Nissin Electric Co Ltd プラズマｃｖｄ法によるシリコン系薄膜の形成方法
US7708028B2 (en) 2006-12-08 2010-05-04 Praxair Technology, Inc. Fail-safe vacuum actuated valve for high pressure delivery systems
US7655931B2 (en) 2007-03-29 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source with gas mixing
US7905247B2 (en) 2008-06-20 2011-03-15 Praxair Technology, Inc. Vacuum actuated valve for high capacity storage and delivery systems
EP3267470A3 (en) * 2012-02-14 2018-04-18 Entegris, Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
SG11201500684RA (en) * 2012-08-28 2015-04-29 Praxair Technology Inc Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation
JP2016514352A (ja) * 2013-03-05 2016-05-19 インテグリス・インコーポレーテッド イオン注入のための組成物、システムおよび方法
US8883620B1 (en) * 2013-04-24 2014-11-11 Praxair Technology, Inc. Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process
WO2014190087A1 (en) * 2013-05-21 2014-11-27 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
US9165773B2 (en) 2013-05-28 2015-10-20 Praxair Technology, Inc. Aluminum dopant compositions, delivery package and method of use
WO2015023903A1 (en) * 2013-08-16 2015-02-19 Entegris, Inc. Silicon implantation in substrates and provision of silicon precursor compositions therefor
US9209033B2 (en) * 2013-08-21 2015-12-08 Tel Epion Inc. GCIB etching method for adjusting fin height of finFET devices
WO2015191929A1 (en) * 2014-06-13 2015-12-17 Entegris, Inc. Adsorbent-based pressure stabilzation of pressure-regulated fluid storage and dispensing vessels
US9909670B2 (en) 2015-03-04 2018-03-06 Praxair Technology, Inc. Modified vacuum actuated valve assembly and sealing mechanism for improved flow stability for fluids sub-atmospherically dispensed from storage and delivery systems

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101558183A (zh) * 2006-12-08 2009-10-14 应用材料股份有限公司 等离子体沉浸离子注入工艺

Also Published As

Publication number Publication date
TWI743105B (zh) 2021-10-21
US20170294314A1 (en) 2017-10-12
TW201807235A (zh) 2018-03-01
JP2019517158A (ja) 2019-06-20
CN109362231B (zh) 2022-12-27
TW201807236A (zh) 2018-03-01
JP6990691B2 (ja) 2022-02-15
US20170294289A1 (en) 2017-10-12
TW201807234A (zh) 2018-03-01
SG10202010058QA (en) 2020-11-27
TWI826349B (zh) 2023-12-21
SG11201808852YA (en) 2018-11-29
WO2017180562A1 (en) 2017-10-19
US20170292186A1 (en) 2017-10-12
KR20180132133A (ko) 2018-12-11
EP3443137A1 (en) 2019-02-20
CN109362231A (zh) 2019-02-19
KR102443564B1 (ko) 2022-09-16
US20200013621A1 (en) 2020-01-09
KR20220129108A (ko) 2022-09-22

Similar Documents

Publication Publication Date Title
TWI724152B (zh) 適用於離子植入以產生含硼離子束電流之硼組成物
US9548181B2 (en) Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
JP6250677B2 (ja) シリコン含有ドーパント組成、シリコン・イオン注入中にイオン・ビーム電流及び性能を改善するために同組成を用いるシステム及び方法
US9524849B2 (en) Method of improving ion beam quality in an implant system
US9034743B2 (en) Method for implant productivity enhancement
KR102272833B1 (ko) 작업물을 프로세싱하는 방법
EP3188214A1 (en) Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation