KR102443564B1 - 이온 주입을 위한 도펀트 조성물 - Google Patents

이온 주입을 위한 도펀트 조성물 Download PDF

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KR102443564B1
KR102443564B1 KR1020187032524A KR20187032524A KR102443564B1 KR 102443564 B1 KR102443564 B1 KR 102443564B1 KR 1020187032524 A KR1020187032524 A KR 1020187032524A KR 20187032524 A KR20187032524 A KR 20187032524A KR 102443564 B1 KR102443564 B1 KR 102443564B1
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South Korea
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species
composition
ion
dopant source
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Korean (ko)
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KR20180132133A (ko
Inventor
아론 레이니커
애쉬위니 케이. 신하
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프랙스에어 테크놀로지, 인코포레이티드
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Priority to KR1020227031380A priority Critical patent/KR20220129108A/ko
Publication of KR20180132133A publication Critical patent/KR20180132133A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H01L21/265—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
KR1020187032524A 2016-04-11 2017-04-11 이온 주입을 위한 도펀트 조성물 Active KR102443564B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020227031380A KR20220129108A (ko) 2016-04-11 2017-04-11 이온 주입을 위한 도펀트 조성물

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US201662321069P 2016-04-11 2016-04-11
US62/321,069 2016-04-11
US15/483,448 2017-04-10
US15/483,448 US20170294314A1 (en) 2016-04-11 2017-04-10 Germanium compositions suitable for ion implantation to produce a germanium-containing ion beam current
US15/483,522 US20170292186A1 (en) 2016-04-11 2017-04-10 Dopant compositions for ion implantation
US15/483,522 2017-04-10
US15/483,479 2017-04-10
US15/483,479 US20170294289A1 (en) 2016-04-11 2017-04-10 Boron compositions suitable for ion implantation to produce a boron-containing ion beam current
PCT/US2017/026913 WO2017180562A1 (en) 2016-04-11 2017-04-11 Dopant compositions for ion implantation

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020227031380A Division KR20220129108A (ko) 2016-04-11 2017-04-11 이온 주입을 위한 도펀트 조성물

Publications (2)

Publication Number Publication Date
KR20180132133A KR20180132133A (ko) 2018-12-11
KR102443564B1 true KR102443564B1 (ko) 2022-09-16

Family

ID=59998279

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020187032524A Active KR102443564B1 (ko) 2016-04-11 2017-04-11 이온 주입을 위한 도펀트 조성물
KR1020227031380A Ceased KR20220129108A (ko) 2016-04-11 2017-04-11 이온 주입을 위한 도펀트 조성물

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020227031380A Ceased KR20220129108A (ko) 2016-04-11 2017-04-11 이온 주입을 위한 도펀트 조성물

Country Status (8)

Country Link
US (4) US20170294314A1 (https=)
EP (1) EP3443137A1 (https=)
JP (1) JP6990691B2 (https=)
KR (2) KR102443564B1 (https=)
CN (1) CN109362231B (https=)
SG (2) SG10202010058QA (https=)
TW (3) TWI724152B (https=)
WO (1) WO2017180562A1 (https=)

Families Citing this family (9)

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Publication number Priority date Publication date Assignee Title
US11098402B2 (en) * 2017-08-22 2021-08-24 Praxair Technology, Inc. Storage and delivery of antimony-containing materials to an ion implanter
JP2021524648A (ja) * 2018-05-17 2021-09-13 インテグリス・インコーポレーテッド イオン注入システムのための四フッ化ゲルマニウムと水素の混合物
US10892137B2 (en) * 2018-09-12 2021-01-12 Entegris, Inc. Ion implantation processes and apparatus using gallium
US10923309B2 (en) * 2018-11-01 2021-02-16 Applied Materials, Inc. GeH4/Ar plasma chemistry for ion implant productivity enhancement
US11120966B2 (en) * 2019-09-03 2021-09-14 Applied Materials, Inc. System and method for improved beam current from an ion source
US11232925B2 (en) 2019-09-03 2022-01-25 Applied Materials, Inc. System and method for improved beam current from an ion source
WO2021232036A1 (en) * 2020-05-11 2021-11-18 Praxair Technology, Inc. Storage and delivery of antimony-containing materials to an ion implanter
EP4222773A4 (en) 2020-10-02 2025-04-30 Entegris, Inc. METHODS AND SYSTEMS FOR THE PRODUCTION OF ALUMINUM IONS
KR20260003811A (ko) * 2023-05-08 2026-01-07 엔테그리스, 아이엔씨. 이온 주입 시스템 및 관련 방법

Citations (3)

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JP2010522966A (ja) 2007-03-29 2010-07-08 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド ガスを混合させることによってイオン源の性能を向上させると共にイオン源を長寿命化する技術
WO2013122986A1 (en) 2012-02-14 2013-08-22 Advanced Technology Materials, Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
US20170122496A1 (en) 2014-06-13 2017-05-04 Entegris, Inc. Adsorbent-based pressure stabilization of pressure-regulated fluid storage and dispensing vessels

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US4891330A (en) * 1987-07-27 1990-01-02 Energy Conversion Devices, Inc. Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements
US6007609A (en) 1997-12-18 1999-12-28 Uop Llc Pressurized container with restrictor tube having multiple capillary passages
US5937895A (en) 1998-04-17 1999-08-17 Uop Llc Fail-safe delivery valve for pressurized tanks
US6045115A (en) 1998-04-17 2000-04-04 Uop Llc Fail-safe delivery arrangement for pressurized containers
US6756600B2 (en) * 1999-02-19 2004-06-29 Advanced Micro Devices, Inc. Ion implantation with improved ion source life expectancy
US7396381B2 (en) * 2004-07-08 2008-07-08 Air Products And Chemicals, Inc. Storage and delivery systems for gases held in liquid medium
JP2008124111A (ja) * 2006-11-09 2008-05-29 Nissin Electric Co Ltd プラズマｃｖｄ法によるシリコン系薄膜の形成方法
US7732309B2 (en) * 2006-12-08 2010-06-08 Applied Materials, Inc. Plasma immersed ion implantation process
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SG11201500684RA (en) * 2012-08-28 2015-04-29 Praxair Technology Inc Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation
JP2016514352A (ja) * 2013-03-05 2016-05-19 インテグリス・インコーポレーテッド イオン注入のための組成物、システムおよび方法
US8883620B1 (en) * 2013-04-24 2014-11-11 Praxair Technology, Inc. Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process
WO2014190087A1 (en) * 2013-05-21 2014-11-27 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
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WO2015023903A1 (en) * 2013-08-16 2015-02-19 Entegris, Inc. Silicon implantation in substrates and provision of silicon precursor compositions therefor
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JP2010522966A (ja) 2007-03-29 2010-07-08 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド ガスを混合させることによってイオン源の性能を向上させると共にイオン源を長寿命化する技術
WO2013122986A1 (en) 2012-02-14 2013-08-22 Advanced Technology Materials, Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
US20170122496A1 (en) 2014-06-13 2017-05-04 Entegris, Inc. Adsorbent-based pressure stabilization of pressure-regulated fluid storage and dispensing vessels

Also Published As

Publication number Publication date
TWI743105B (zh) 2021-10-21
US20170294314A1 (en) 2017-10-12
TW201807235A (zh) 2018-03-01
JP2019517158A (ja) 2019-06-20
CN109362231B (zh) 2022-12-27
TW201807236A (zh) 2018-03-01
JP6990691B2 (ja) 2022-02-15
US20170294289A1 (en) 2017-10-12
TW201807234A (zh) 2018-03-01
SG10202010058QA (en) 2020-11-27
TWI826349B (zh) 2023-12-21
SG11201808852YA (en) 2018-11-29
WO2017180562A1 (en) 2017-10-19
US20170292186A1 (en) 2017-10-12
KR20180132133A (ko) 2018-12-11
TWI724152B (zh) 2021-04-11
EP3443137A1 (en) 2019-02-20
CN109362231A (zh) 2019-02-19
US20200013621A1 (en) 2020-01-09
KR20220129108A (ko) 2022-09-22

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