CN109362231B - 用于离子注入的掺杂剂组合物 - Google Patents

用于离子注入的掺杂剂组合物 Download PDF

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Publication number
CN109362231B
CN109362231B CN201780029981.4A CN201780029981A CN109362231B CN 109362231 B CN109362231 B CN 109362231B CN 201780029981 A CN201780029981 A CN 201780029981A CN 109362231 B CN109362231 B CN 109362231B
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China
Prior art keywords
composition
dopant source
species
beam current
ion beam
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CN201780029981.4A
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English (en)
Chinese (zh)
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CN109362231A (zh
Inventor
A·雷伊尼克尔
A·K·辛哈
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Praxair Technology Inc
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Praxair Technology Inc
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Publication of CN109362231A publication Critical patent/CN109362231A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
CN201780029981.4A 2016-04-11 2017-04-11 用于离子注入的掺杂剂组合物 Active CN109362231B (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US201662321069P 2016-04-11 2016-04-11
US62/321069 2016-04-11
US15/483479 2017-04-10
US15/483522 2017-04-10
US15/483448 2017-04-10
US15/483,448 US20170294314A1 (en) 2016-04-11 2017-04-10 Germanium compositions suitable for ion implantation to produce a germanium-containing ion beam current
US15/483,522 US20170292186A1 (en) 2016-04-11 2017-04-10 Dopant compositions for ion implantation
US15/483,479 US20170294289A1 (en) 2016-04-11 2017-04-10 Boron compositions suitable for ion implantation to produce a boron-containing ion beam current
PCT/US2017/026913 WO2017180562A1 (en) 2016-04-11 2017-04-11 Dopant compositions for ion implantation

Publications (2)

Publication Number Publication Date
CN109362231A CN109362231A (zh) 2019-02-19
CN109362231B true CN109362231B (zh) 2022-12-27

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780029981.4A Active CN109362231B (zh) 2016-04-11 2017-04-11 用于离子注入的掺杂剂组合物

Country Status (8)

Country Link
US (4) US20170294314A1 (https=)
EP (1) EP3443137A1 (https=)
JP (1) JP6990691B2 (https=)
KR (2) KR102443564B1 (https=)
CN (1) CN109362231B (https=)
SG (2) SG10202010058QA (https=)
TW (3) TWI724152B (https=)
WO (1) WO2017180562A1 (https=)

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US11098402B2 (en) * 2017-08-22 2021-08-24 Praxair Technology, Inc. Storage and delivery of antimony-containing materials to an ion implanter
JP2021524648A (ja) * 2018-05-17 2021-09-13 インテグリス・インコーポレーテッド イオン注入システムのための四フッ化ゲルマニウムと水素の混合物
US10892137B2 (en) * 2018-09-12 2021-01-12 Entegris, Inc. Ion implantation processes and apparatus using gallium
US10923309B2 (en) * 2018-11-01 2021-02-16 Applied Materials, Inc. GeH4/Ar plasma chemistry for ion implant productivity enhancement
US11120966B2 (en) * 2019-09-03 2021-09-14 Applied Materials, Inc. System and method for improved beam current from an ion source
US11232925B2 (en) 2019-09-03 2022-01-25 Applied Materials, Inc. System and method for improved beam current from an ion source
WO2021232036A1 (en) * 2020-05-11 2021-11-18 Praxair Technology, Inc. Storage and delivery of antimony-containing materials to an ion implanter
EP4222773A4 (en) 2020-10-02 2025-04-30 Entegris, Inc. METHODS AND SYSTEMS FOR THE PRODUCTION OF ALUMINUM IONS
KR20260003811A (ko) * 2023-05-08 2026-01-07 엔테그리스, 아이엔씨. 이온 주입 시스템 및 관련 방법

Citations (2)

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CN104272433A (zh) * 2012-02-14 2015-01-07 先进技术材料股份有限公司 用于改善注入束和源寿命性能的碳掺杂剂气体和协流
CN104584183A (zh) * 2012-08-28 2015-04-29 普莱克斯技术有限公司 用于改进硅离子注入期间的离子束电流和性能的含硅掺杂剂组合物、使用该组合物的系统和方法

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CN104584183A (zh) * 2012-08-28 2015-04-29 普莱克斯技术有限公司 用于改进硅离子注入期间的离子束电流和性能的含硅掺杂剂组合物、使用该组合物的系统和方法

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Also Published As

Publication number Publication date
TWI743105B (zh) 2021-10-21
US20170294314A1 (en) 2017-10-12
TW201807235A (zh) 2018-03-01
JP2019517158A (ja) 2019-06-20
TW201807236A (zh) 2018-03-01
JP6990691B2 (ja) 2022-02-15
US20170294289A1 (en) 2017-10-12
TW201807234A (zh) 2018-03-01
SG10202010058QA (en) 2020-11-27
TWI826349B (zh) 2023-12-21
SG11201808852YA (en) 2018-11-29
WO2017180562A1 (en) 2017-10-19
US20170292186A1 (en) 2017-10-12
KR20180132133A (ko) 2018-12-11
TWI724152B (zh) 2021-04-11
EP3443137A1 (en) 2019-02-20
CN109362231A (zh) 2019-02-19
KR102443564B1 (ko) 2022-09-16
US20200013621A1 (en) 2020-01-09
KR20220129108A (ko) 2022-09-22

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