SG10202010058QA - Dopant compositions for ion implantation - Google Patents
Dopant compositions for ion implantationInfo
- Publication number
- SG10202010058QA SG10202010058QA SG10202010058QA SG10202010058QA SG10202010058QA SG 10202010058Q A SG10202010058Q A SG 10202010058QA SG 10202010058Q A SG10202010058Q A SG 10202010058QA SG 10202010058Q A SG10202010058Q A SG 10202010058QA SG 10202010058Q A SG10202010058Q A SG 10202010058QA
- Authority
- SG
- Singapore
- Prior art keywords
- ion implantation
- dopant compositions
- dopant
- compositions
- implantation
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662321069P | 2016-04-11 | 2016-04-11 | |
| US15/483,448 US20170294314A1 (en) | 2016-04-11 | 2017-04-10 | Germanium compositions suitable for ion implantation to produce a germanium-containing ion beam current |
| US15/483,522 US20170292186A1 (en) | 2016-04-11 | 2017-04-10 | Dopant compositions for ion implantation |
| US15/483,479 US20170294289A1 (en) | 2016-04-11 | 2017-04-10 | Boron compositions suitable for ion implantation to produce a boron-containing ion beam current |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10202010058QA true SG10202010058QA (en) | 2020-11-27 |
Family
ID=59998279
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10202010058QA SG10202010058QA (en) | 2016-04-11 | 2017-04-11 | Dopant compositions for ion implantation |
| SG11201808852YA SG11201808852YA (en) | 2016-04-11 | 2017-04-11 | Dopant compositions for ion implantation |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201808852YA SG11201808852YA (en) | 2016-04-11 | 2017-04-11 | Dopant compositions for ion implantation |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US20170294314A1 (https=) |
| EP (1) | EP3443137A1 (https=) |
| JP (1) | JP6990691B2 (https=) |
| KR (2) | KR102443564B1 (https=) |
| CN (1) | CN109362231B (https=) |
| SG (2) | SG10202010058QA (https=) |
| TW (3) | TWI724152B (https=) |
| WO (1) | WO2017180562A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11098402B2 (en) * | 2017-08-22 | 2021-08-24 | Praxair Technology, Inc. | Storage and delivery of antimony-containing materials to an ion implanter |
| JP2021524648A (ja) * | 2018-05-17 | 2021-09-13 | インテグリス・インコーポレーテッド | イオン注入システムのための四フッ化ゲルマニウムと水素の混合物 |
| US10892137B2 (en) * | 2018-09-12 | 2021-01-12 | Entegris, Inc. | Ion implantation processes and apparatus using gallium |
| US10923309B2 (en) * | 2018-11-01 | 2021-02-16 | Applied Materials, Inc. | GeH4/Ar plasma chemistry for ion implant productivity enhancement |
| US11120966B2 (en) * | 2019-09-03 | 2021-09-14 | Applied Materials, Inc. | System and method for improved beam current from an ion source |
| US11232925B2 (en) | 2019-09-03 | 2022-01-25 | Applied Materials, Inc. | System and method for improved beam current from an ion source |
| WO2021232036A1 (en) * | 2020-05-11 | 2021-11-18 | Praxair Technology, Inc. | Storage and delivery of antimony-containing materials to an ion implanter |
| EP4222773A4 (en) | 2020-10-02 | 2025-04-30 | Entegris, Inc. | METHODS AND SYSTEMS FOR THE PRODUCTION OF ALUMINUM IONS |
| KR20260003811A (ko) * | 2023-05-08 | 2026-01-07 | 엔테그리스, 아이엔씨. | 이온 주입 시스템 및 관련 방법 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1305350C (en) * | 1986-04-08 | 1992-07-21 | Hiroshi Amada | Light receiving member |
| US4891330A (en) * | 1987-07-27 | 1990-01-02 | Energy Conversion Devices, Inc. | Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements |
| US6007609A (en) | 1997-12-18 | 1999-12-28 | Uop Llc | Pressurized container with restrictor tube having multiple capillary passages |
| US5937895A (en) | 1998-04-17 | 1999-08-17 | Uop Llc | Fail-safe delivery valve for pressurized tanks |
| US6045115A (en) | 1998-04-17 | 2000-04-04 | Uop Llc | Fail-safe delivery arrangement for pressurized containers |
| US6756600B2 (en) * | 1999-02-19 | 2004-06-29 | Advanced Micro Devices, Inc. | Ion implantation with improved ion source life expectancy |
| US7396381B2 (en) * | 2004-07-08 | 2008-07-08 | Air Products And Chemicals, Inc. | Storage and delivery systems for gases held in liquid medium |
| JP2008124111A (ja) * | 2006-11-09 | 2008-05-29 | Nissin Electric Co Ltd | プラズマｃｖｄ法によるシリコン系薄膜の形成方法 |
| US7732309B2 (en) * | 2006-12-08 | 2010-06-08 | Applied Materials, Inc. | Plasma immersed ion implantation process |
| US7708028B2 (en) | 2006-12-08 | 2010-05-04 | Praxair Technology, Inc. | Fail-safe vacuum actuated valve for high pressure delivery systems |
| US7655931B2 (en) | 2007-03-29 | 2010-02-02 | Varian Semiconductor Equipment Associates, Inc. | Techniques for improving the performance and extending the lifetime of an ion source with gas mixing |
| US7905247B2 (en) | 2008-06-20 | 2011-03-15 | Praxair Technology, Inc. | Vacuum actuated valve for high capacity storage and delivery systems |
| EP3267470A3 (en) * | 2012-02-14 | 2018-04-18 | Entegris, Inc. | Carbon dopant gas and co-flow for implant beam and source life performance improvement |
| SG11201500684RA (en) * | 2012-08-28 | 2015-04-29 | Praxair Technology Inc | Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation |
| JP2016514352A (ja) * | 2013-03-05 | 2016-05-19 | インテグリス・インコーポレーテッド | イオン注入のための組成物、システムおよび方法 |
| US8883620B1 (en) * | 2013-04-24 | 2014-11-11 | Praxair Technology, Inc. | Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process |
| WO2014190087A1 (en) * | 2013-05-21 | 2014-11-27 | Advanced Technology Materials, Inc. | Enriched silicon precursor compositions and apparatus and processes for utilizing same |
| US9165773B2 (en) | 2013-05-28 | 2015-10-20 | Praxair Technology, Inc. | Aluminum dopant compositions, delivery package and method of use |
| WO2015023903A1 (en) * | 2013-08-16 | 2015-02-19 | Entegris, Inc. | Silicon implantation in substrates and provision of silicon precursor compositions therefor |
| US9209033B2 (en) * | 2013-08-21 | 2015-12-08 | Tel Epion Inc. | GCIB etching method for adjusting fin height of finFET devices |
| WO2015191929A1 (en) * | 2014-06-13 | 2015-12-17 | Entegris, Inc. | Adsorbent-based pressure stabilzation of pressure-regulated fluid storage and dispensing vessels |
| US9909670B2 (en) | 2015-03-04 | 2018-03-06 | Praxair Technology, Inc. | Modified vacuum actuated valve assembly and sealing mechanism for improved flow stability for fluids sub-atmospherically dispensed from storage and delivery systems |
-
2017
- 2017-04-10 US US15/483,448 patent/US20170294314A1/en not_active Abandoned
- 2017-04-10 US US15/483,522 patent/US20170292186A1/en not_active Abandoned
- 2017-04-10 US US15/483,479 patent/US20170294289A1/en not_active Abandoned
- 2017-04-11 TW TW106112052A patent/TWI724152B/zh active
- 2017-04-11 TW TW106112054A patent/TWI743105B/zh active
- 2017-04-11 SG SG10202010058QA patent/SG10202010058QA/en unknown
- 2017-04-11 KR KR1020187032524A patent/KR102443564B1/ko active Active
- 2017-04-11 SG SG11201808852YA patent/SG11201808852YA/en unknown
- 2017-04-11 CN CN201780029981.4A patent/CN109362231B/zh active Active
- 2017-04-11 TW TW106112055A patent/TWI826349B/zh active
- 2017-04-11 WO PCT/US2017/026913 patent/WO2017180562A1/en not_active Ceased
- 2017-04-11 EP EP17719778.7A patent/EP3443137A1/en not_active Withdrawn
- 2017-04-11 KR KR1020227031380A patent/KR20220129108A/ko not_active Ceased
- 2017-04-11 JP JP2019503647A patent/JP6990691B2/ja active Active
-
2019
- 2019-07-23 US US16/519,180 patent/US20200013621A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| TWI743105B (zh) | 2021-10-21 |
| US20170294314A1 (en) | 2017-10-12 |
| TW201807235A (zh) | 2018-03-01 |
| JP2019517158A (ja) | 2019-06-20 |
| CN109362231B (zh) | 2022-12-27 |
| TW201807236A (zh) | 2018-03-01 |
| JP6990691B2 (ja) | 2022-02-15 |
| US20170294289A1 (en) | 2017-10-12 |
| TW201807234A (zh) | 2018-03-01 |
| TWI826349B (zh) | 2023-12-21 |
| SG11201808852YA (en) | 2018-11-29 |
| WO2017180562A1 (en) | 2017-10-19 |
| US20170292186A1 (en) | 2017-10-12 |
| KR20180132133A (ko) | 2018-12-11 |
| TWI724152B (zh) | 2021-04-11 |
| EP3443137A1 (en) | 2019-02-20 |
| CN109362231A (zh) | 2019-02-19 |
| KR102443564B1 (ko) | 2022-09-16 |
| US20200013621A1 (en) | 2020-01-09 |
| KR20220129108A (ko) | 2022-09-22 |
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