SG2013069778A - Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process - Google Patents
Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation processInfo
- Publication number
- SG2013069778A SG2013069778A SG2013069778A SG2013069778A SG2013069778A SG 2013069778 A SG2013069778 A SG 2013069778A SG 2013069778 A SG2013069778 A SG 2013069778A SG 2013069778 A SG2013069778 A SG 2013069778A SG 2013069778 A SG2013069778 A SG 2013069778A
- Authority
- SG
- Singapore
- Prior art keywords
- methods
- ion implantation
- implantation process
- isotopically enriched
- dopant gas
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. program control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
- H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/225—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of a molecular ion, e.g. decaborane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/869,456 US8883620B1 (en) | 2013-04-24 | 2013-04-24 | Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG2013069778A true SG2013069778A (en) | 2014-11-27 |
Family
ID=49162090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2013069778A SG2013069778A (en) | 2013-04-24 | 2013-09-16 | Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8883620B1 (https=) |
| EP (1) | EP2796590A1 (https=) |
| JP (1) | JP5775551B2 (https=) |
| KR (1) | KR101586122B1 (https=) |
| CN (1) | CN104124141B (https=) |
| SG (1) | SG2013069778A (https=) |
| TW (1) | TWI487008B (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015023903A1 (en) | 2013-08-16 | 2015-02-19 | Entegris, Inc. | Silicon implantation in substrates and provision of silicon precursor compositions therefor |
| CN105239048B (zh) * | 2015-10-09 | 2018-11-09 | 北京大学深圳研究生院 | 一种金属等离子体源及其应用 |
| US9818570B2 (en) * | 2015-10-23 | 2017-11-14 | Varian Semiconductor Equipment Associates, Inc. | Ion source for multiple charged species |
| US20170294314A1 (en) | 2016-04-11 | 2017-10-12 | Aaron Reinicker | Germanium compositions suitable for ion implantation to produce a germanium-containing ion beam current |
| CN207458887U (zh) * | 2017-06-16 | 2018-06-05 | 上海凯世通半导体股份有限公司 | 离子注入设备 |
| US10597773B2 (en) * | 2017-08-22 | 2020-03-24 | Praxair Technology, Inc. | Antimony-containing materials for ion implantation |
| JP2021524648A (ja) * | 2018-05-17 | 2021-09-13 | インテグリス・インコーポレーテッド | イオン注入システムのための四フッ化ゲルマニウムと水素の混合物 |
| US10923309B2 (en) * | 2018-11-01 | 2021-02-16 | Applied Materials, Inc. | GeH4/Ar plasma chemistry for ion implant productivity enhancement |
| CN113261073B (zh) * | 2018-12-15 | 2024-07-16 | 恩特格里斯公司 | 利用非钨材料的氟离子植入系统和其使用方法 |
| US10748738B1 (en) * | 2019-03-18 | 2020-08-18 | Applied Materials, Inc. | Ion source with tubular cathode |
| US12278141B2 (en) * | 2021-06-18 | 2025-04-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor devices and methods of manufacture |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6007609A (en) | 1997-12-18 | 1999-12-28 | Uop Llc | Pressurized container with restrictor tube having multiple capillary passages |
| US6045115A (en) | 1998-04-17 | 2000-04-04 | Uop Llc | Fail-safe delivery arrangement for pressurized containers |
| US5937895A (en) | 1998-04-17 | 1999-08-17 | Uop Llc | Fail-safe delivery valve for pressurized tanks |
| JP3655491B2 (ja) * | 1999-04-28 | 2005-06-02 | 株式会社東芝 | イオン発生方法およびイオン照射方法 |
| US6875986B1 (en) * | 1999-04-28 | 2005-04-05 | Kabushiki Kaisha Toshiba | Ion generation method and filament for ion generation apparatus |
| US20040171226A1 (en) * | 2001-07-05 | 2004-09-02 | Burden Stephen J. | Isotopically pure silicon-on-insulator wafers and method of making same |
| US6960774B2 (en) * | 2003-11-03 | 2005-11-01 | Advanced Micro Devices, Inc. | Fault detection and control methodologies for ion implantation processes, and system for performing same |
| KR100606032B1 (ko) * | 2004-12-22 | 2006-07-28 | 동부일렉트로닉스 주식회사 | 이온 주입 장치의 최적화 방법 |
| US7708028B2 (en) | 2006-12-08 | 2010-05-04 | Praxair Technology, Inc. | Fail-safe vacuum actuated valve for high pressure delivery systems |
| US7905247B2 (en) | 2008-06-20 | 2011-03-15 | Praxair Technology, Inc. | Vacuum actuated valve for high capacity storage and delivery systems |
| US8062965B2 (en) * | 2009-10-27 | 2011-11-22 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
| TWI386983B (zh) * | 2010-02-26 | 2013-02-21 | 尖端科技材料股份有限公司 | 用以增進離子植入系統中之離子源的壽命及性能之方法與設備 |
-
2013
- 2013-04-24 US US13/869,456 patent/US8883620B1/en active Active
- 2013-09-14 TW TW102133376A patent/TWI487008B/zh active
- 2013-09-16 SG SG2013069778A patent/SG2013069778A/en unknown
- 2013-09-16 EP EP20130184609 patent/EP2796590A1/en not_active Withdrawn
- 2013-09-19 JP JP2013193605A patent/JP5775551B2/ja not_active Expired - Fee Related
- 2013-09-23 CN CN201310561130.8A patent/CN104124141B/zh active Active
- 2013-10-31 KR KR1020130130863A patent/KR101586122B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014216311A (ja) | 2014-11-17 |
| EP2796590A1 (en) | 2014-10-29 |
| US20140322902A1 (en) | 2014-10-30 |
| US8883620B1 (en) | 2014-11-11 |
| KR20140127135A (ko) | 2014-11-03 |
| TW201442075A (zh) | 2014-11-01 |
| CN104124141A (zh) | 2014-10-29 |
| CN104124141B (zh) | 2016-10-26 |
| JP5775551B2 (ja) | 2015-09-09 |
| TWI487008B (zh) | 2015-06-01 |
| KR101586122B1 (ko) | 2016-01-15 |
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