KR101586122B1 - 동위원소로 농축된 레벨의 도펀트 기체 조성물의 이온 주입 공정에의 사용 방법 - Google Patents

동위원소로 농축된 레벨의 도펀트 기체 조성물의 이온 주입 공정에의 사용 방법 Download PDF

Info

Publication number
KR101586122B1
KR101586122B1 KR1020130130863A KR20130130863A KR101586122B1 KR 101586122 B1 KR101586122 B1 KR 101586122B1 KR 1020130130863 A KR1020130130863 A KR 1020130130863A KR 20130130863 A KR20130130863 A KR 20130130863A KR 101586122 B1 KR101586122 B1 KR 101586122B1
Authority
KR
South Korea
Prior art keywords
dopant gas
concentrated
enriched
ion source
flow rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020130130863A
Other languages
English (en)
Korean (ko)
Other versions
KR20140127135A (ko
Inventor
애쉬위니 케이 싱하
칭 아이 리
Original Assignee
프랙스에어 테크놀로지, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 프랙스에어 테크놀로지, 인코포레이티드 filed Critical 프랙스에어 테크놀로지, 인코포레이티드
Publication of KR20140127135A publication Critical patent/KR20140127135A/ko
Application granted granted Critical
Publication of KR101586122B1 publication Critical patent/KR101586122B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/225—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1020130130863A 2013-04-24 2013-10-31 동위원소로 농축된 레벨의 도펀트 기체 조성물의 이온 주입 공정에의 사용 방법 Active KR101586122B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/869,456 2013-04-24
US13/869,456 US8883620B1 (en) 2013-04-24 2013-04-24 Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation process

Publications (2)

Publication Number Publication Date
KR20140127135A KR20140127135A (ko) 2014-11-03
KR101586122B1 true KR101586122B1 (ko) 2016-01-15

Family

ID=49162090

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130130863A Active KR101586122B1 (ko) 2013-04-24 2013-10-31 동위원소로 농축된 레벨의 도펀트 기체 조성물의 이온 주입 공정에의 사용 방법

Country Status (7)

Country Link
US (1) US8883620B1 (https=)
EP (1) EP2796590A1 (https=)
JP (1) JP5775551B2 (https=)
KR (1) KR101586122B1 (https=)
CN (1) CN104124141B (https=)
SG (1) SG2013069778A (https=)
TW (1) TWI487008B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015023903A1 (en) 2013-08-16 2015-02-19 Entegris, Inc. Silicon implantation in substrates and provision of silicon precursor compositions therefor
CN105239048B (zh) * 2015-10-09 2018-11-09 北京大学深圳研究生院 一种金属等离子体源及其应用
US9818570B2 (en) * 2015-10-23 2017-11-14 Varian Semiconductor Equipment Associates, Inc. Ion source for multiple charged species
US20170294314A1 (en) 2016-04-11 2017-10-12 Aaron Reinicker Germanium compositions suitable for ion implantation to produce a germanium-containing ion beam current
CN207458887U (zh) * 2017-06-16 2018-06-05 上海凯世通半导体股份有限公司 离子注入设备
US10597773B2 (en) * 2017-08-22 2020-03-24 Praxair Technology, Inc. Antimony-containing materials for ion implantation
JP2021524648A (ja) * 2018-05-17 2021-09-13 インテグリス・インコーポレーテッド イオン注入システムのための四フッ化ゲルマニウムと水素の混合物
US10923309B2 (en) * 2018-11-01 2021-02-16 Applied Materials, Inc. GeH4/Ar plasma chemistry for ion implant productivity enhancement
CN113261073B (zh) * 2018-12-15 2024-07-16 恩特格里斯公司 利用非钨材料的氟离子植入系统和其使用方法
US10748738B1 (en) * 2019-03-18 2020-08-18 Applied Materials, Inc. Ion source with tubular cathode
US12278141B2 (en) * 2021-06-18 2025-04-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020100876A1 (en) * 1999-04-28 2002-08-01 Kabushiki Kaisha Toshiba Ion generation method and filament for ion generation apparatus

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6007609A (en) 1997-12-18 1999-12-28 Uop Llc Pressurized container with restrictor tube having multiple capillary passages
US6045115A (en) 1998-04-17 2000-04-04 Uop Llc Fail-safe delivery arrangement for pressurized containers
US5937895A (en) 1998-04-17 1999-08-17 Uop Llc Fail-safe delivery valve for pressurized tanks
JP3655491B2 (ja) * 1999-04-28 2005-06-02 株式会社東芝 イオン発生方法およびイオン照射方法
US20040171226A1 (en) * 2001-07-05 2004-09-02 Burden Stephen J. Isotopically pure silicon-on-insulator wafers and method of making same
US6960774B2 (en) * 2003-11-03 2005-11-01 Advanced Micro Devices, Inc. Fault detection and control methodologies for ion implantation processes, and system for performing same
KR100606032B1 (ko) * 2004-12-22 2006-07-28 동부일렉트로닉스 주식회사 이온 주입 장치의 최적화 방법
US7708028B2 (en) 2006-12-08 2010-05-04 Praxair Technology, Inc. Fail-safe vacuum actuated valve for high pressure delivery systems
US7905247B2 (en) 2008-06-20 2011-03-15 Praxair Technology, Inc. Vacuum actuated valve for high capacity storage and delivery systems
US8062965B2 (en) * 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
TWI386983B (zh) * 2010-02-26 2013-02-21 尖端科技材料股份有限公司 用以增進離子植入系統中之離子源的壽命及性能之方法與設備

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020100876A1 (en) * 1999-04-28 2002-08-01 Kabushiki Kaisha Toshiba Ion generation method and filament for ion generation apparatus

Also Published As

Publication number Publication date
JP2014216311A (ja) 2014-11-17
EP2796590A1 (en) 2014-10-29
US20140322902A1 (en) 2014-10-30
US8883620B1 (en) 2014-11-11
SG2013069778A (en) 2014-11-27
KR20140127135A (ko) 2014-11-03
TW201442075A (zh) 2014-11-01
CN104124141A (zh) 2014-10-29
CN104124141B (zh) 2016-10-26
JP5775551B2 (ja) 2015-09-09
TWI487008B (zh) 2015-06-01

Similar Documents

Publication Publication Date Title
KR101586122B1 (ko) 동위원소로 농축된 레벨의 도펀트 기체 조성물의 이온 주입 공정에의 사용 방법
US9548181B2 (en) Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
US7655931B2 (en) Techniques for improving the performance and extending the lifetime of an ion source with gas mixing
TWI592974B (zh) 離子源及清洗離子源的方法
JP6250677B2 (ja) シリコン含有ドーパント組成、シリコン・イオン注入中にイオン・ビーム電流及び性能を改善するために同組成を用いるシステム及び方法
WO2011081927A1 (en) Techniques for generating uniform ion beam
KR20150125018A (ko) 농축 셀레늄 이온 주입을 위한 공급 소스 및 방법
EP2677057A1 (en) Methods for extending ion source life and improving ion source performance during carbon implantation
EP3188214A1 (en) Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantation
US8907301B1 (en) Gas mixture method for generating ion beam

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

A201 Request for examination
A302 Request for accelerated examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20190102

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20200103

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 10