WO2009044681A1 - シリコンのエッチング方法 - Google Patents

シリコンのエッチング方法 Download PDF

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Publication number
WO2009044681A1
WO2009044681A1 PCT/JP2008/067502 JP2008067502W WO2009044681A1 WO 2009044681 A1 WO2009044681 A1 WO 2009044681A1 JP 2008067502 W JP2008067502 W JP 2008067502W WO 2009044681 A1 WO2009044681 A1 WO 2009044681A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
fluorine
silicon
reaction gas
mixed
Prior art date
Application number
PCT/JP2008/067502
Other languages
English (en)
French (fr)
Inventor
Tetsuya Ishii
Setsuo Nakajima
Tomohiro Otsuka
Syunsuke Kunugi
Takashi Sato
Original Assignee
Sekisui Chemical Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co., Ltd. filed Critical Sekisui Chemical Co., Ltd.
Priority to JP2009536033A priority Critical patent/JP5416590B2/ja
Priority to KR1020107009873A priority patent/KR101141873B1/ko
Priority to CN200880109735.0A priority patent/CN101816064B/zh
Publication of WO2009044681A1 publication Critical patent/WO2009044681A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

【課題】シリコンのエッチングレートを向上させる。 【解決手段】フッ素系原料のＣＦ４とＡｒの混合ガスに露点が１０°C～４０°Cになる量の水を添加して、大気圧下でプラズマ化する。プラズマ化後のガスをオゾナイザー１３からのオゾン含有ガスと混合し、反応ガスを得る。反応ガスは、１ｖｏｌ％以上のオゾンと、ＣＯＦ２等の非ラジカルのフッ素系中間物質と、０．４ｖｏｌ％以上のＨＦ等のフッ素系反応物質を含み、フッ素原子数（Ｆ）と水素原子数（Ｈ）の比が（Ｆ）／（Ｈ）＞１．８である。この反応ガスを、温度１０°C～５０°Cのシリコン膜９１（被処理物）に吹付ける。
PCT/JP2008/067502 2007-10-05 2008-09-26 シリコンのエッチング方法 WO2009044681A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009536033A JP5416590B2 (ja) 2007-10-05 2008-09-26 シリコンのエッチング方法
KR1020107009873A KR101141873B1 (ko) 2007-10-05 2008-09-26 실리콘의 에칭 방법
CN200880109735.0A CN101816064B (zh) 2007-10-05 2008-09-26 硅的蚀刻方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-262549 2007-10-05
JP2007262549 2007-10-05

Publications (1)

Publication Number Publication Date
WO2009044681A1 true WO2009044681A1 (ja) 2009-04-09

Family

ID=40526110

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067502 WO2009044681A1 (ja) 2007-10-05 2008-09-26 シリコンのエッチング方法

Country Status (5)

Country Link
JP (1) JP5416590B2 (ja)
KR (1) KR101141873B1 (ja)
CN (1) CN101816064B (ja)
TW (1) TW200924052A (ja)
WO (1) WO2009044681A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102414140A (zh) * 2009-05-07 2012-04-11 日本电气硝子株式会社 玻璃基板及其制造方法
JP2021174985A (ja) * 2020-04-30 2021-11-01 東京エレクトロン株式会社 基板処理方法、プラズマ処理装置、及びエッチングガス組成物

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102770944B (zh) * 2010-02-25 2013-11-06 积水化学工业株式会社 蚀刻方法及装置
KR102030797B1 (ko) * 2012-03-30 2019-11-11 삼성디스플레이 주식회사 박막 트랜지스터 표시판 제조 방법
CN107154366B (zh) * 2016-03-03 2020-01-21 中国科学院微电子研究所 一种硅片抛光装置
CN107154351B (zh) * 2016-03-03 2020-07-21 中国科学院微电子研究所 一种硅片抛光方法及装置
US10629451B1 (en) * 2019-02-01 2020-04-21 American Air Liquide, Inc. Method to improve profile control during selective etching of silicon nitride spacers
JP7312160B2 (ja) * 2020-12-28 2023-07-20 株式会社アルバック エッチング装置及びエッチング方法
KR102416875B1 (ko) * 2021-02-19 2022-07-05 김은도 미세 정렬모듈이 구비된 슬롯 다이 코팅장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000164559A (ja) * 1998-09-22 2000-06-16 Seiko Epson Corp シリコン系物質の選択エッチング方法および装置
JP2005011827A (ja) * 2002-07-17 2005-01-13 Sekisui Chem Co Ltd 常圧プラズマエッチング用ガス供給方法および供給装置
JP2007051051A (ja) * 2004-12-23 2007-03-01 Siltronic Ag ガス状媒体で半導体ウェハを処理する方法並びに前記媒体で処理された半導体ウェハ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4167544B2 (ja) * 2003-05-30 2008-10-15 積水化学工業株式会社 プラズマエッチング方法及び装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000164559A (ja) * 1998-09-22 2000-06-16 Seiko Epson Corp シリコン系物質の選択エッチング方法および装置
JP2005011827A (ja) * 2002-07-17 2005-01-13 Sekisui Chem Co Ltd 常圧プラズマエッチング用ガス供給方法および供給装置
JP2007051051A (ja) * 2004-12-23 2007-03-01 Siltronic Ag ガス状媒体で半導体ウェハを処理する方法並びに前記媒体で処理された半導体ウェハ

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102414140A (zh) * 2009-05-07 2012-04-11 日本电气硝子株式会社 玻璃基板及其制造方法
KR101391675B1 (ko) * 2009-05-07 2014-05-07 니폰 덴키 가라스 가부시키가이샤 유리 기판 및 그 제조 방법
JP5679513B2 (ja) * 2009-05-07 2015-03-04 日本電気硝子株式会社 ガラス基板及びその製造方法
JP2021174985A (ja) * 2020-04-30 2021-11-01 東京エレクトロン株式会社 基板処理方法、プラズマ処理装置、及びエッチングガス組成物

Also Published As

Publication number Publication date
KR20100072340A (ko) 2010-06-30
KR101141873B1 (ko) 2012-05-24
TWI374494B (ja) 2012-10-11
TW200924052A (en) 2009-06-01
JP5416590B2 (ja) 2014-02-12
JPWO2009044681A1 (ja) 2011-02-10
CN101816064B (zh) 2013-02-27
CN101816064A (zh) 2010-08-25

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