KR101141873B1 - 실리콘의 에칭 방법 - Google Patents
실리콘의 에칭 방법 Download PDFInfo
- Publication number
- KR101141873B1 KR101141873B1 KR1020107009873A KR20107009873A KR101141873B1 KR 101141873 B1 KR101141873 B1 KR 101141873B1 KR 1020107009873 A KR1020107009873 A KR 1020107009873A KR 20107009873 A KR20107009873 A KR 20107009873A KR 101141873 B1 KR101141873 B1 KR 101141873B1
- Authority
- KR
- South Korea
- Prior art keywords
- fluorine
- gas
- etching method
- ozone
- etching
- Prior art date
Links
- 238000005530 etching Methods 0.000 title claims abstract description 116
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 62
- 239000010703 silicon Substances 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims description 39
- 239000007789 gas Substances 0.000 claims abstract description 155
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 124
- 239000011737 fluorine Substances 0.000 claims abstract description 122
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 120
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 86
- 239000012495 reaction gas Substances 0.000 claims abstract description 46
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000002994 raw material Substances 0.000 claims abstract description 35
- 239000000376 reactant Substances 0.000 claims abstract description 18
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 16
- 125000001153 fluoro group Chemical group F* 0.000 claims abstract description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 99
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 56
- 230000001590 oxidative effect Effects 0.000 claims description 29
- 229910052760 oxygen Inorganic materials 0.000 claims description 26
- 229910052757 nitrogen Inorganic materials 0.000 claims description 23
- 239000001301 oxygen Substances 0.000 claims description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 229910052786 argon Inorganic materials 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000005984 hydrogenation reaction Methods 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 4
- 230000009257 reactivity Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 57
- 239000000543 intermediate Substances 0.000 abstract description 21
- 239000000758 substrate Substances 0.000 description 64
- 238000006243 chemical reaction Methods 0.000 description 49
- 238000009833 condensation Methods 0.000 description 44
- 230000005494 condensation Effects 0.000 description 44
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 28
- 238000007254 oxidation reaction Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 16
- 230000003647 oxidation Effects 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- 238000002156 mixing Methods 0.000 description 13
- 238000012545 processing Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 238000009795 derivation Methods 0.000 description 10
- 150000003254 radicals Chemical class 0.000 description 10
- 239000011521 glass Substances 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 7
- 239000003085 diluting agent Substances 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 5
- 238000010790 dilution Methods 0.000 description 5
- 239000012895 dilution Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 4
- 229920006926 PFC Polymers 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 150000002221 fluorine Chemical class 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- CUPFNGOKRMWUOO-UHFFFAOYSA-N hydron;difluoride Chemical compound F.F CUPFNGOKRMWUOO-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2007-262549 | 2007-10-05 | ||
| JP2007262549 | 2007-10-05 | ||
| PCT/JP2008/067502 WO2009044681A1 (ja) | 2007-10-05 | 2008-09-26 | シリコンのエッチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20100072340A KR20100072340A (ko) | 2010-06-30 |
| KR101141873B1 true KR101141873B1 (ko) | 2012-05-24 |
Family
ID=40526110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020107009873A KR101141873B1 (ko) | 2007-10-05 | 2008-09-26 | 실리콘의 에칭 방법 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5416590B2 (ja) |
| KR (1) | KR101141873B1 (ja) |
| CN (1) | CN101816064B (ja) |
| TW (1) | TW200924052A (ja) |
| WO (1) | WO2009044681A1 (ja) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI680110B (zh) * | 2009-05-07 | 2019-12-21 | 日本電氣硝子股份有限公司 | 玻璃基板及其製造方法 |
| CN102770944B (zh) * | 2010-02-25 | 2013-11-06 | 积水化学工业株式会社 | 蚀刻方法及装置 |
| KR102030797B1 (ko) * | 2012-03-30 | 2019-11-11 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 제조 방법 |
| CN107154366B (zh) * | 2016-03-03 | 2020-01-21 | 中国科学院微电子研究所 | 一种硅片抛光装置 |
| CN107154351B (zh) * | 2016-03-03 | 2020-07-21 | 中国科学院微电子研究所 | 一种硅片抛光方法及装置 |
| US10629451B1 (en) * | 2019-02-01 | 2020-04-21 | American Air Liquide, Inc. | Method to improve profile control during selective etching of silicon nitride spacers |
| JP6956288B2 (ja) * | 2020-04-30 | 2021-11-02 | 東京エレクトロン株式会社 | 基板処理方法、プラズマ処理装置、及びエッチングガス組成物 |
| JP7312160B2 (ja) * | 2020-12-28 | 2023-07-20 | 株式会社アルバック | エッチング装置及びエッチング方法 |
| KR102416875B1 (ko) * | 2021-02-19 | 2022-07-05 | 김은도 | 미세 정렬모듈이 구비된 슬롯 다이 코팅장치 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005011827A (ja) | 2002-07-17 | 2005-01-13 | Sekisui Chem Co Ltd | 常圧プラズマエッチング用ガス供給方法および供給装置 |
| JP2007051051A (ja) | 2004-12-23 | 2007-03-01 | Siltronic Ag | ガス状媒体で半導体ウェハを処理する方法並びに前記媒体で処理された半導体ウェハ |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000164559A (ja) * | 1998-09-22 | 2000-06-16 | Seiko Epson Corp | シリコン系物質の選択エッチング方法および装置 |
| JP4167544B2 (ja) * | 2003-05-30 | 2008-10-15 | 積水化学工業株式会社 | プラズマエッチング方法及び装置 |
-
2008
- 2008-09-26 KR KR1020107009873A patent/KR101141873B1/ko active IP Right Grant
- 2008-09-26 WO PCT/JP2008/067502 patent/WO2009044681A1/ja active Application Filing
- 2008-09-26 JP JP2009536033A patent/JP5416590B2/ja not_active Expired - Fee Related
- 2008-09-26 CN CN200880109735.0A patent/CN101816064B/zh active Active
- 2008-10-03 TW TW97138332A patent/TW200924052A/zh not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005011827A (ja) | 2002-07-17 | 2005-01-13 | Sekisui Chem Co Ltd | 常圧プラズマエッチング用ガス供給方法および供給装置 |
| JP2007051051A (ja) | 2004-12-23 | 2007-03-01 | Siltronic Ag | ガス状媒体で半導体ウェハを処理する方法並びに前記媒体で処理された半導体ウェハ |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20100072340A (ko) | 2010-06-30 |
| TWI374494B (ja) | 2012-10-11 |
| TW200924052A (en) | 2009-06-01 |
| JP5416590B2 (ja) | 2014-02-12 |
| JPWO2009044681A1 (ja) | 2011-02-10 |
| CN101816064B (zh) | 2013-02-27 |
| CN101816064A (zh) | 2010-08-25 |
| WO2009044681A1 (ja) | 2009-04-09 |
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