JP2016517469A5 - - Google Patents

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Publication number
JP2016517469A5
JP2016517469A5 JP2015561399A JP2015561399A JP2016517469A5 JP 2016517469 A5 JP2016517469 A5 JP 2016517469A5 JP 2015561399 A JP2015561399 A JP 2015561399A JP 2015561399 A JP2015561399 A JP 2015561399A JP 2016517469 A5 JP2016517469 A5 JP 2016517469A5
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JP
Japan
Prior art keywords
enclosure
disposed
central axis
coupled
rotary actuator
Prior art date
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Application number
JP2015561399A
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English (en)
Japanese (ja)
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JP6297607B2 (ja
JP2016517469A (ja
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Priority claimed from US13/785,193 external-priority patent/US9580795B2/en
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Publication of JP2016517469A publication Critical patent/JP2016517469A/ja
Publication of JP2016517469A5 publication Critical patent/JP2016517469A5/ja
Application granted granted Critical
Publication of JP6297607B2 publication Critical patent/JP6297607B2/ja
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JP2015561399A 2013-03-05 2014-02-26 半導体プロセスチャンバ内で使用するためのスパッタ源 Active JP6297607B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/785,193 US9580795B2 (en) 2013-03-05 2013-03-05 Sputter source for use in a semiconductor process chamber
US13/785,193 2013-03-05
PCT/US2014/018614 WO2014137697A1 (en) 2013-03-05 2014-02-26 Sputter source for use in a semiconductor process chamber

Publications (3)

Publication Number Publication Date
JP2016517469A JP2016517469A (ja) 2016-06-16
JP2016517469A5 true JP2016517469A5 (enExample) 2017-03-30
JP6297607B2 JP6297607B2 (ja) 2018-03-20

Family

ID=51486487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015561399A Active JP6297607B2 (ja) 2013-03-05 2014-02-26 半導体プロセスチャンバ内で使用するためのスパッタ源

Country Status (6)

Country Link
US (1) US9580795B2 (enExample)
JP (1) JP6297607B2 (enExample)
KR (1) KR101855089B1 (enExample)
CN (1) CN105074873B (enExample)
TW (1) TWI600782B (enExample)
WO (1) WO2014137697A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102246293B1 (ko) * 2014-08-05 2021-04-30 삼성디스플레이 주식회사 마그넷 플레이트 조립체, 이를 포함하는 증착장치 및 증착방법
KR102311740B1 (ko) 2016-03-05 2021-10-08 어플라이드 머티어리얼스, 인코포레이티드 물리 기상 증착 프로세스들에서 이온 프랙션을 제어하기 위한 방법들 및 장치
CN107090574B (zh) * 2017-06-29 2024-02-27 北京北方华创微电子装备有限公司 馈入结构、上电极组件以及物理气相沉积腔室和设备
KR101957453B1 (ko) 2018-10-25 2019-03-12 김영만 나무여과상자
CN110885965B (zh) * 2019-11-04 2021-07-13 北京北方华创微电子装备有限公司 物理气相沉积腔室和物理气相沉积设备
US11295938B2 (en) * 2020-06-30 2022-04-05 Applied Materials, Inc. Multi-radius magnetron for physical vapor deposition (PVD) and methods of use thereof
KR102359552B1 (ko) 2020-08-20 2022-02-07 남옥랑 우수를 재이용하는 식생구조를 갖는 비점오염 정수처리용 나무여과시스템

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4714536A (en) 1985-08-26 1987-12-22 Varian Associates, Inc. Planar magnetron sputtering device with combined circumferential and radial movement of magnetic fields
US6024843A (en) 1989-05-22 2000-02-15 Novellus Systems, Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
US6689254B1 (en) * 1990-10-31 2004-02-10 Tokyo Electron Limited Sputtering apparatus with isolated coolant and sputtering target therefor
JPH11504986A (ja) * 1995-05-11 1999-05-11 マテリアルズ リサーチ コーポレーション 冷却液を隔離したスパッタリング装置及びそのスパッタリングターゲット
WO1998002597A1 (en) * 1996-07-17 1998-01-22 Novellus Systems, Inc. Sputtering device and liquid-cooled target assembly therefor
DE19813075A1 (de) * 1998-03-25 1999-09-30 Leybold Ag Vorrichtung zum Beschichten eines Substrates
KR101179727B1 (ko) * 2001-11-14 2012-09-04 어플라이드 머티어리얼스, 인코포레이티드 스퍼터링 및 재스퍼터링을 위한 자기-이온화 및 유도 결합 플라즈마
US20060065524A1 (en) * 2004-09-30 2006-03-30 Richard Newcomb Non-bonded rotatable targets for sputtering
JP4994220B2 (ja) 2005-02-08 2012-08-08 東北精機工業株式会社 スパッタリング装置
US8021527B2 (en) 2005-09-14 2011-09-20 Applied Materials, Inc. Coaxial shafts for radial positioning of rotating magnetron
US7901552B2 (en) * 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
US8114256B2 (en) * 2007-11-30 2012-02-14 Applied Materials, Inc. Control of arbitrary scan path of a rotating magnetron
US8070925B2 (en) * 2008-10-17 2011-12-06 Applied Materials, Inc. Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target
US8795487B2 (en) * 2010-03-31 2014-08-05 Applied Materials, Inc. Physical vapor deposition chamber with rotating magnet assembly and centrally fed RF power
JP5730077B2 (ja) * 2010-06-03 2015-06-03 キヤノンアネルバ株式会社 磁石ユニットおよびマグネトロンスパッタリング装置
JP2012140648A (ja) * 2010-12-28 2012-07-26 Canon Anelva Corp スパッタリング装置及びそのスパッタリング方法
CN102560395B (zh) * 2010-12-29 2014-07-16 北京北方微电子基地设备工艺研究中心有限责任公司 磁控源，磁控溅射设备和磁控溅射方法
JP2012201919A (ja) * 2011-03-24 2012-10-22 Toshiba Corp スパッタ装置およびスパッタ方法

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