CN105074873B - 在半导体处理腔室中所使用的溅射源 - Google Patents

在半导体处理腔室中所使用的溅射源 Download PDF

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Publication number
CN105074873B
CN105074873B CN201480008495.0A CN201480008495A CN105074873B CN 105074873 B CN105074873 B CN 105074873B CN 201480008495 A CN201480008495 A CN 201480008495A CN 105074873 B CN105074873 B CN 105074873B
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China
Prior art keywords
enclosure
central axis
coupled
shaft
sputtering source
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CN201480008495.0A
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English (en)
Chinese (zh)
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CN105074873A (zh
Inventor
基思·A·米勒
马丁·李·莱克
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Applied Materials Inc
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Applied Materials Inc
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
CN201480008495.0A 2013-03-05 2014-02-26 在半导体处理腔室中所使用的溅射源 Active CN105074873B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/785,193 US9580795B2 (en) 2013-03-05 2013-03-05 Sputter source for use in a semiconductor process chamber
US13/785,193 2013-03-05
PCT/US2014/018614 WO2014137697A1 (en) 2013-03-05 2014-02-26 Sputter source for use in a semiconductor process chamber

Publications (2)

Publication Number Publication Date
CN105074873A CN105074873A (zh) 2015-11-18
CN105074873B true CN105074873B (zh) 2018-05-29

Family

ID=51486487

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480008495.0A Active CN105074873B (zh) 2013-03-05 2014-02-26 在半导体处理腔室中所使用的溅射源

Country Status (6)

Country Link
US (1) US9580795B2 (enExample)
JP (1) JP6297607B2 (enExample)
KR (1) KR101855089B1 (enExample)
CN (1) CN105074873B (enExample)
TW (1) TWI600782B (enExample)
WO (1) WO2014137697A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102246293B1 (ko) * 2014-08-05 2021-04-30 삼성디스플레이 주식회사 마그넷 플레이트 조립체, 이를 포함하는 증착장치 및 증착방법
IL261173B2 (en) 2016-03-05 2023-03-01 Applied Materials Inc Methods and device for controlling ionic fraction in physical vapor deposition processes
CN107090574B (zh) * 2017-06-29 2024-02-27 北京北方华创微电子装备有限公司 馈入结构、上电极组件以及物理气相沉积腔室和设备
KR101957453B1 (ko) 2018-10-25 2019-03-12 김영만 나무여과상자
CN110885965B (zh) * 2019-11-04 2021-07-13 北京北方华创微电子装备有限公司 物理气相沉积腔室和物理气相沉积设备
US11295938B2 (en) * 2020-06-30 2022-04-05 Applied Materials, Inc. Multi-radius magnetron for physical vapor deposition (PVD) and methods of use thereof
KR102359552B1 (ko) 2020-08-20 2022-02-07 남옥랑 우수를 재이용하는 식생구조를 갖는 비점오염 정수처리용 나무여과시스템

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0945524A1 (de) * 1998-03-25 1999-09-29 Balzers und Leybold Deutschland Holding AG Vorrichtung zum Beschichten eines Substrates
CN1656243A (zh) * 2001-11-14 2005-08-17 应用材料有限公司 用于溅射和再溅射的自离子化及电感耦合等离子体
CN1754981A (zh) * 2004-09-30 2006-04-05 应用膜公司 用于溅射的非结合可旋转靶
US20090090620A1 (en) * 2007-10-05 2009-04-09 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
US20090139854A1 (en) * 2007-11-30 2009-06-04 Applied Materials, Inc. Control of arbitrary scan path of a rotating magnetron
US20100096261A1 (en) * 2008-10-17 2010-04-22 Applied Materials, Inc. Physical vapor deposition reactor with circularly symmetric rf feed and dc feed to the sputter target

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4714536A (en) 1985-08-26 1987-12-22 Varian Associates, Inc. Planar magnetron sputtering device with combined circumferential and radial movement of magnetic fields
US6024843A (en) 1989-05-22 2000-02-15 Novellus Systems, Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
US6689254B1 (en) * 1990-10-31 2004-02-10 Tokyo Electron Limited Sputtering apparatus with isolated coolant and sputtering target therefor
JPH11504986A (ja) * 1995-05-11 1999-05-11 マテリアルズ リサーチ コーポレーション 冷却液を隔離したスパッタリング装置及びそのスパッタリングターゲット
JP2000500188A (ja) * 1996-07-17 2000-01-11 ノヴェラス システムズ，インコーポレーテッド スパッタリング装置および同装置用の液冷式ターゲット組立体
WO2006085354A1 (ja) 2005-02-08 2006-08-17 Tohoku Seiki Industries, Ltd. スパッタリング装置
US8021527B2 (en) 2005-09-14 2011-09-20 Applied Materials, Inc. Coaxial shafts for radial positioning of rotating magnetron
US8795487B2 (en) 2010-03-31 2014-08-05 Applied Materials, Inc. Physical vapor deposition chamber with rotating magnet assembly and centrally fed RF power
JP5730077B2 (ja) * 2010-06-03 2015-06-03 キヤノンアネルバ株式会社 磁石ユニットおよびマグネトロンスパッタリング装置
JP2012140648A (ja) * 2010-12-28 2012-07-26 Canon Anelva Corp スパッタリング装置及びそのスパッタリング方法
CN102560395B (zh) * 2010-12-29 2014-07-16 北京北方微电子基地设备工艺研究中心有限责任公司 磁控源，磁控溅射设备和磁控溅射方法
JP2012201919A (ja) * 2011-03-24 2012-10-22 Toshiba Corp スパッタ装置およびスパッタ方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0945524A1 (de) * 1998-03-25 1999-09-29 Balzers und Leybold Deutschland Holding AG Vorrichtung zum Beschichten eines Substrates
CN1656243A (zh) * 2001-11-14 2005-08-17 应用材料有限公司 用于溅射和再溅射的自离子化及电感耦合等离子体
CN1754981A (zh) * 2004-09-30 2006-04-05 应用膜公司 用于溅射的非结合可旋转靶
US20090090620A1 (en) * 2007-10-05 2009-04-09 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
US20090139854A1 (en) * 2007-11-30 2009-06-04 Applied Materials, Inc. Control of arbitrary scan path of a rotating magnetron
US20100096261A1 (en) * 2008-10-17 2010-04-22 Applied Materials, Inc. Physical vapor deposition reactor with circularly symmetric rf feed and dc feed to the sputter target

Also Published As

Publication number Publication date
WO2014137697A1 (en) 2014-09-12
JP2016517469A (ja) 2016-06-16
TWI600782B (zh) 2017-10-01
JP6297607B2 (ja) 2018-03-20
US20140251800A1 (en) 2014-09-11
US9580795B2 (en) 2017-02-28
TW201437404A (zh) 2014-10-01
CN105074873A (zh) 2015-11-18
KR20150127620A (ko) 2015-11-17
KR101855089B1 (ko) 2018-05-08

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