KR101855089B1 - 반도체 프로세스 챔버에서 사용하기 위한 스퍼터 소스 - Google Patents

반도체 프로세스 챔버에서 사용하기 위한 스퍼터 소스 Download PDF

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KR101855089B1
KR101855089B1 KR1020157024700A KR20157024700A KR101855089B1 KR 101855089 B1 KR101855089 B1 KR 101855089B1 KR 1020157024700 A KR1020157024700 A KR 1020157024700A KR 20157024700 A KR20157024700 A KR 20157024700A KR 101855089 B1 KR101855089 B1 KR 101855089B1
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South Korea
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enclosure
central axis
disposed
coupled
process chamber
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Korean (ko)
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KR20150127620A (ko
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키이스 에이. 밀러
마틴 리 라이커
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어플라이드 머티어리얼스, 인코포레이티드
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    • H01L21/203—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
KR1020157024700A 2013-03-05 2014-02-26 반도체 프로세스 챔버에서 사용하기 위한 스퍼터 소스 Active KR101855089B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/785,193 US9580795B2 (en) 2013-03-05 2013-03-05 Sputter source for use in a semiconductor process chamber
US13/785,193 2013-03-05
PCT/US2014/018614 WO2014137697A1 (en) 2013-03-05 2014-02-26 Sputter source for use in a semiconductor process chamber

Publications (2)

Publication Number Publication Date
KR20150127620A KR20150127620A (ko) 2015-11-17
KR101855089B1 true KR101855089B1 (ko) 2018-05-08

Family

ID=51486487

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157024700A Active KR101855089B1 (ko) 2013-03-05 2014-02-26 반도체 프로세스 챔버에서 사용하기 위한 스퍼터 소스

Country Status (6)

Country Link
US (1) US9580795B2 (enExample)
JP (1) JP6297607B2 (enExample)
KR (1) KR101855089B1 (enExample)
CN (1) CN105074873B (enExample)
TW (1) TWI600782B (enExample)
WO (1) WO2014137697A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102246293B1 (ko) * 2014-08-05 2021-04-30 삼성디스플레이 주식회사 마그넷 플레이트 조립체, 이를 포함하는 증착장치 및 증착방법
IL261173B2 (en) 2016-03-05 2023-03-01 Applied Materials Inc Methods and device for controlling ionic fraction in physical vapor deposition processes
CN107090574B (zh) * 2017-06-29 2024-02-27 北京北方华创微电子装备有限公司 馈入结构、上电极组件以及物理气相沉积腔室和设备
KR101957453B1 (ko) 2018-10-25 2019-03-12 김영만 나무여과상자
CN110885965B (zh) * 2019-11-04 2021-07-13 北京北方华创微电子装备有限公司 物理气相沉积腔室和物理气相沉积设备
US11295938B2 (en) * 2020-06-30 2022-04-05 Applied Materials, Inc. Multi-radius magnetron for physical vapor deposition (PVD) and methods of use thereof
KR102359552B1 (ko) 2020-08-20 2022-02-07 남옥랑 우수를 재이용하는 식생구조를 갖는 비점오염 정수처리용 나무여과시스템

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4714536A (en) 1985-08-26 1987-12-22 Varian Associates, Inc. Planar magnetron sputtering device with combined circumferential and radial movement of magnetic fields
US6024843A (en) 1989-05-22 2000-02-15 Novellus Systems, Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
US6689254B1 (en) * 1990-10-31 2004-02-10 Tokyo Electron Limited Sputtering apparatus with isolated coolant and sputtering target therefor
JPH11504986A (ja) * 1995-05-11 1999-05-11 マテリアルズ リサーチ コーポレーション 冷却液を隔離したスパッタリング装置及びそのスパッタリングターゲット
JP2000500188A (ja) * 1996-07-17 2000-01-11 ノヴェラス システムズ，インコーポレーテッド スパッタリング装置および同装置用の液冷式ターゲット組立体
DE19813075A1 (de) * 1998-03-25 1999-09-30 Leybold Ag Vorrichtung zum Beschichten eines Substrates
KR100993046B1 (ko) * 2001-11-14 2010-11-08 어플라이드 머티어리얼스, 인코포레이티드 스퍼터링 및 재스퍼터링을 위한 자기-이온화 및 유도 결합플라즈마
US20060065524A1 (en) * 2004-09-30 2006-03-30 Richard Newcomb Non-bonded rotatable targets for sputtering
WO2006085354A1 (ja) 2005-02-08 2006-08-17 Tohoku Seiki Industries, Ltd. スパッタリング装置
US8021527B2 (en) 2005-09-14 2011-09-20 Applied Materials, Inc. Coaxial shafts for radial positioning of rotating magnetron
US7901552B2 (en) * 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
US8114256B2 (en) * 2007-11-30 2012-02-14 Applied Materials, Inc. Control of arbitrary scan path of a rotating magnetron
US8070925B2 (en) * 2008-10-17 2011-12-06 Applied Materials, Inc. Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target
US8795487B2 (en) 2010-03-31 2014-08-05 Applied Materials, Inc. Physical vapor deposition chamber with rotating magnet assembly and centrally fed RF power
JP5730077B2 (ja) * 2010-06-03 2015-06-03 キヤノンアネルバ株式会社 磁石ユニットおよびマグネトロンスパッタリング装置
JP2012140648A (ja) * 2010-12-28 2012-07-26 Canon Anelva Corp スパッタリング装置及びそのスパッタリング方法
CN102560395B (zh) * 2010-12-29 2014-07-16 北京北方微电子基地设备工艺研究中心有限责任公司 磁控源，磁控溅射设备和磁控溅射方法
JP2012201919A (ja) * 2011-03-24 2012-10-22 Toshiba Corp スパッタ装置およびスパッタ方法

Also Published As

Publication number Publication date
WO2014137697A1 (en) 2014-09-12
JP2016517469A (ja) 2016-06-16
TWI600782B (zh) 2017-10-01
JP6297607B2 (ja) 2018-03-20
US20140251800A1 (en) 2014-09-11
US9580795B2 (en) 2017-02-28
TW201437404A (zh) 2014-10-01
CN105074873B (zh) 2018-05-29
CN105074873A (zh) 2015-11-18
KR20150127620A (ko) 2015-11-17

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