JP6297607B2 - 半導体プロセスチャンバ内で使用するためのスパッタ源 - Google Patents

半導体プロセスチャンバ内で使用するためのスパッタ源 Download PDF

Info

Publication number
JP6297607B2
JP6297607B2 JP2015561399A JP2015561399A JP6297607B2 JP 6297607 B2 JP6297607 B2 JP 6297607B2 JP 2015561399 A JP2015561399 A JP 2015561399A JP 2015561399 A JP2015561399 A JP 2015561399A JP 6297607 B2 JP6297607 B2 JP 6297607B2
Authority
JP
Japan
Prior art keywords
enclosure
disposed
central axis
shaft
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015561399A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016517469A5 (enExample
JP2016517469A (ja
Inventor
キース エイ ミラー
キース エイ ミラー
マーティン リー ライカー
マーティン リー ライカー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2016517469A publication Critical patent/JP2016517469A/ja
Publication of JP2016517469A5 publication Critical patent/JP2016517469A5/ja
Application granted granted Critical
Publication of JP6297607B2 publication Critical patent/JP6297607B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP2015561399A 2013-03-05 2014-02-26 半導体プロセスチャンバ内で使用するためのスパッタ源 Active JP6297607B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/785,193 US9580795B2 (en) 2013-03-05 2013-03-05 Sputter source for use in a semiconductor process chamber
US13/785,193 2013-03-05
PCT/US2014/018614 WO2014137697A1 (en) 2013-03-05 2014-02-26 Sputter source for use in a semiconductor process chamber

Publications (3)

Publication Number Publication Date
JP2016517469A JP2016517469A (ja) 2016-06-16
JP2016517469A5 JP2016517469A5 (enExample) 2017-03-30
JP6297607B2 true JP6297607B2 (ja) 2018-03-20

Family

ID=51486487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015561399A Active JP6297607B2 (ja) 2013-03-05 2014-02-26 半導体プロセスチャンバ内で使用するためのスパッタ源

Country Status (6)

Country Link
US (1) US9580795B2 (enExample)
JP (1) JP6297607B2 (enExample)
KR (1) KR101855089B1 (enExample)
CN (1) CN105074873B (enExample)
TW (1) TWI600782B (enExample)
WO (1) WO2014137697A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102246293B1 (ko) * 2014-08-05 2021-04-30 삼성디스플레이 주식회사 마그넷 플레이트 조립체, 이를 포함하는 증착장치 및 증착방법
KR102311740B1 (ko) 2016-03-05 2021-10-08 어플라이드 머티어리얼스, 인코포레이티드 물리 기상 증착 프로세스들에서 이온 프랙션을 제어하기 위한 방법들 및 장치
CN107090574B (zh) * 2017-06-29 2024-02-27 北京北方华创微电子装备有限公司 馈入结构、上电极组件以及物理气相沉积腔室和设备
KR101957453B1 (ko) 2018-10-25 2019-03-12 김영만 나무여과상자
CN110885965B (zh) * 2019-11-04 2021-07-13 北京北方华创微电子装备有限公司 物理气相沉积腔室和物理气相沉积设备
US11295938B2 (en) * 2020-06-30 2022-04-05 Applied Materials, Inc. Multi-radius magnetron for physical vapor deposition (PVD) and methods of use thereof
KR102359552B1 (ko) 2020-08-20 2022-02-07 남옥랑 우수를 재이용하는 식생구조를 갖는 비점오염 정수처리용 나무여과시스템

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4714536A (en) 1985-08-26 1987-12-22 Varian Associates, Inc. Planar magnetron sputtering device with combined circumferential and radial movement of magnetic fields
US6024843A (en) 1989-05-22 2000-02-15 Novellus Systems, Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
US6689254B1 (en) * 1990-10-31 2004-02-10 Tokyo Electron Limited Sputtering apparatus with isolated coolant and sputtering target therefor
JPH11504986A (ja) * 1995-05-11 1999-05-11 マテリアルズ リサーチ コーポレーション 冷却液を隔離したスパッタリング装置及びそのスパッタリングターゲット
WO1998002597A1 (en) * 1996-07-17 1998-01-22 Novellus Systems, Inc. Sputtering device and liquid-cooled target assembly therefor
DE19813075A1 (de) * 1998-03-25 1999-09-30 Leybold Ag Vorrichtung zum Beschichten eines Substrates
KR101179727B1 (ko) * 2001-11-14 2012-09-04 어플라이드 머티어리얼스, 인코포레이티드 스퍼터링 및 재스퍼터링을 위한 자기-이온화 및 유도 결합 플라즈마
US20060065524A1 (en) * 2004-09-30 2006-03-30 Richard Newcomb Non-bonded rotatable targets for sputtering
JP4994220B2 (ja) 2005-02-08 2012-08-08 東北精機工業株式会社 スパッタリング装置
US8021527B2 (en) 2005-09-14 2011-09-20 Applied Materials, Inc. Coaxial shafts for radial positioning of rotating magnetron
US7901552B2 (en) * 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
US8114256B2 (en) * 2007-11-30 2012-02-14 Applied Materials, Inc. Control of arbitrary scan path of a rotating magnetron
US8070925B2 (en) * 2008-10-17 2011-12-06 Applied Materials, Inc. Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target
US8795487B2 (en) * 2010-03-31 2014-08-05 Applied Materials, Inc. Physical vapor deposition chamber with rotating magnet assembly and centrally fed RF power
JP5730077B2 (ja) * 2010-06-03 2015-06-03 キヤノンアネルバ株式会社 磁石ユニットおよびマグネトロンスパッタリング装置
JP2012140648A (ja) * 2010-12-28 2012-07-26 Canon Anelva Corp スパッタリング装置及びそのスパッタリング方法
CN102560395B (zh) * 2010-12-29 2014-07-16 北京北方微电子基地设备工艺研究中心有限责任公司 磁控源，磁控溅射设备和磁控溅射方法
JP2012201919A (ja) * 2011-03-24 2012-10-22 Toshiba Corp スパッタ装置およびスパッタ方法

Also Published As

Publication number Publication date
US9580795B2 (en) 2017-02-28
KR20150127620A (ko) 2015-11-17
KR101855089B1 (ko) 2018-05-08
TW201437404A (zh) 2014-10-01
TWI600782B (zh) 2017-10-01
WO2014137697A1 (en) 2014-09-12
CN105074873B (zh) 2018-05-29
US20140251800A1 (en) 2014-09-11
JP2016517469A (ja) 2016-06-16
CN105074873A (zh) 2015-11-18

Similar Documents

Publication Publication Date Title
JP6297607B2 (ja) 半導体プロセスチャンバ内で使用するためのスパッタ源
CN104937134B (zh) 可配置的可变位置式封闭轨道磁电管
US9991101B2 (en) Magnetron assembly for physical vapor deposition chamber
KR101725431B1 (ko) Ｐｖｄ ｒｆ ｄｃ 개방/폐쇄 루프 선택가능한 마그네트론
CN106574363B (zh) 在标靶生命期的期间维持低非均匀性的方法和设备
CN108884559A (zh) 用于vhf-rf pvd腔室中的预涂覆的屏蔽物
TW202018113A (zh) Pvd濺射沉積腔室中的傾斜磁控管
US20140346037A1 (en) Sputter device
JP2019099882A (ja) Ｐｖｄ処理方法およびｐｖｄ処理装置
JP7354090B2 (ja) デュアル位置マグネトロンおよび中心に送出される冷却剤を有するカソードアセンブリ
US20120024229A1 (en) Control of plasma profile using magnetic null arrangement by auxiliary magnets
CN118103544A (zh) 用于在半导体处理期间在基板上产生磁场的设备
JP7684334B2 (ja) 物理的気相堆積（ｐｖｄ）用多重半径マグネトロン及びその使用方法
US9831075B2 (en) Source magnet for improved resputtering uniformity in direct current (DC) physical vapor deposition (PVD) processes
TW202233865A (zh) 處理基板的方法及設備
TW202217023A (zh) 用於處理基板的方法及設備

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170224

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170224

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20171213

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180122

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180221

R150 Certificate of patent or registration of utility model

Ref document number: 6297607

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250