JP2016510514A - 窒化物パワーデバイスおよびその製造方法 - Google Patents
窒化物パワーデバイスおよびその製造方法 Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 152
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 99
- 239000010703 silicon Substances 0.000 claims abstract description 99
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 97
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 244
- 239000004065 semiconductor Substances 0.000 claims description 67
- 230000004888 barrier function Effects 0.000 claims description 29
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 21
- 229910002601 GaN Inorganic materials 0.000 claims description 20
- 230000006911 nucleation Effects 0.000 claims description 16
- 238000010899 nucleation Methods 0.000 claims description 16
- 238000003780 insertion Methods 0.000 claims description 6
- 230000037431 insertion Effects 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 6
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- 229910004541 SiN Inorganic materials 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910004140 HfO Inorganic materials 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 34
- 239000000463 material Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000002829 reductive effect Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- -1 fluorine ions Chemical class 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
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Abstract
Description
好ましくは、上記窒化物パワーデバイスにおいて、上記半導体ドーピング複数層構造の製作方法がエピタキシャル成長またはイオン注入である。
好ましくは、上記窒化物パワーデバイスには、上記バリア層上における誘電体層をさらに含む。
好ましくは、上記窒化物パワーデバイスには、上記バリア層上における窒化ガリウムキャップ層をさらに含む。
好ましくは、上記窒化物パワーデバイスには、上記バッファ層と上記チャネル層との間におけるAIGaNバックバリア層をさらに含む。
好ましくは、上記窒化物パワーデバイスにおいて、上記ゲートの下に誘電体層を有する。
以下、図面を参照して、本発明の解決手段を詳しく説明する。
該第1実施形態の窒化物パワーデバイスの製造において、
2 窒化物核形成層
3 窒化物バッファ層
4 窒化物チャネル層
5 窒化物バリア層
6 ソース
7 ドレイン
8 ゲート
9 誘電体パッシベーション層
10 半導体ドーピング複数層構造
11 GaNキャップ層
12 AIN挿入層
13 AIGaNバックバリア層
14 絶縁誘電体層
15 ゲートフィールドプレート
16 ソースフィールドプレート
Claims (15)
- 窒化物パワーデバイスであって、
空間電荷空乏領域を形成することが可能な半導体ドーピング複数層構造を含むシリコン基板と、
上記シリコン基板上におけるエピタキシャル複数層構造と、
前記エピタキシャル複数層構造上に形成される電極と、を含み、
該エピタキシャル複数層構造は、少なくとも、窒化物核形成層と、前記窒化物核形成層上に形成される窒化物バッファ層と、前記窒化物バッファ層上に形成される窒化物チャネル層と、を含み、
前記窒化物パワーデバイスがトライオード構造である場合、前記電極は、ソースおよびドレイン、並びに、ソースとドレインとの間のゲートを含み、前記窒化物パワーデバイスがダイオード構造である場合、前記電極は、正極および負極を含む窒化物パワーデバイス。 - 前記半導体ドーピング複数層構造は、1層のn型半導体層および1層のp型半導体層で構成されるpn接合であり、1つの空間空乏領域を含み、もしくは、n型半導体層およびp型半導体層を交互に繰り返すことにより構成される複数層構造であり、複数のpn接合、即ち、複数の空間空乏領域を含むことを特徴とする請求項1に記載の窒化物パワーデバイス。
- 前記半導体ドーピング複数層構造におけるn型半導体層およびp型半導体層の単層の厚さが2nmより大きく、該半導体ドーピング複数層構造におけるn型半導体層およびp型半導体層がそれぞれn−型半導体およびp−型半導体であり、半導体ドーピング複数層構造全体の層数、厚さ、およびドーピング濃度は、耐えるすべき電圧に応じて調節することを特徴とする請求項2に記載の窒化物パワーデバイス。
- 前記半導体ドーピング複数層構造は、シリコン基板のトップ層、または内部、または裏面、あるいは、それらの任意の組み合わせに形成することが可能であることを特徴とする請求項1に記載の窒化物パワーデバイス。
- 前記半導体ドーピング複数層構造における半導体は、シリコン、ゲルマニウム、ゲルマニウムシリコン、炭化ケイ素、III−V族化合物のうちの任意の1つまたはそれらの任意の組み合わせであることが可能であることを特徴とする請求項1に記載の窒化物パワーデバイス。
- 前記窒化物チャネル層上には、さらに窒化物バリア層が設けられており、窒化物チャネル層と窒化物バリア層との界面において、二次元電子ガスが形成されていることを特徴とする請求項1に記載の窒化物パワーデバイス。
- 前記窒化物バリア層上には、さらに誘電体層が設けられていることを特徴とする請求項6に記載の窒化物パワーデバイス。
- 前記誘電体層は、SiN、SiO2、SiON、Al2O3、HfO2、HfAlOxのうちの1つを含み、もしくは、それらの任意の組み合わせであることを特徴とする請求項7に記載の窒化物パワーデバイス。
- 上記窒化物バリア層上における窒化ガリウムキャップ層をさらに含むことを特徴とする請求項6に記載の窒化物パワーデバイス。
- 上記窒化物バリア層と上記窒化物チャネル層との間におけるAIN挿入層をさらに含むことを特徴とする請求項6に記載の窒化物パワーデバイス。
- 上記バッファ層と上記チャネル層との間におけるAIGaNバックバリア層をさらに含むことを特徴とする請求項1に記載の窒化物パワーデバイス。
- 前記ゲートの下方には、さらに絶縁誘電体層が設けられていることを特徴とする請求項1に記載の窒化物パワーデバイス。
- 前記ゲートおよび/またはソースは、フィールドプレート構造を有することを特徴とする請求項1に記載の窒化物パワーデバイス。
- 窒化物パワーデバイスを製造するための方法であって、
空間電荷空乏領域を形成することが可能な半導体ドーピング複数層構造をシリコン基板に導入するステップと、
上記半導体ドーピング複数層構造を含むシリコン基板上に窒化物核形成層を成長させるステップと、
上記窒化物核形成層上に窒化物バッファ層を成長させるステップと、
上記窒化物バッファ層上に窒化物チャネル層を成長させるステップと、
上記窒化物チャネル層上に接触電極を形成するステップと、を含み、
前記窒化物パワーデバイスがトライオード構造である場合、前記電極は、ソースおよびドレイン、並びに、ソースとドレインとの間のゲートを含み、前記窒化物パワーデバイスがダイオード構造である場合、前記電極は、正極および負極を含む、
ことを特徴とする窒化物パワーデバイスを製造するための方法。 - 前記半導体ドーピング複数層構造の製作方法がエピタキシャル成長またはイオン注入であることを特徴とする請求項14に記載の窒化物パワーデバイスを製造するための方法。
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005217049A (ja) * | 2004-01-28 | 2005-08-11 | Sanken Electric Co Ltd | 半導体装置 |
JP2007158143A (ja) * | 2005-12-07 | 2007-06-21 | Nippon Telegr & Teleph Corp <Ntt> | ヘテロ接合型電界効果トランジスタ |
JP2007250721A (ja) * | 2006-03-15 | 2007-09-27 | Matsushita Electric Ind Co Ltd | 窒化物半導体電界効果トランジスタ構造 |
JP2007294769A (ja) * | 2006-04-26 | 2007-11-08 | Toshiba Corp | 窒化物半導体素子 |
WO2010001607A1 (ja) * | 2008-07-03 | 2010-01-07 | パナソニック株式会社 | 窒化物半導体装置 |
WO2012054122A1 (en) * | 2010-10-20 | 2012-04-26 | National Semiconductor Corporation | Hemt with increased buffer breakdown voltage |
WO2012054123A1 (en) * | 2010-10-20 | 2012-04-26 | National Semiconductor Corporation | Hemt with floating and grounded substrate regions |
JP2012156320A (ja) * | 2011-01-26 | 2012-08-16 | Toshiba Corp | 半導体素子 |
JP2012231003A (ja) * | 2011-04-26 | 2012-11-22 | Advanced Power Device Research Association | 半導体装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5060030A (en) * | 1990-07-18 | 1991-10-22 | Raytheon Company | Pseudomorphic HEMT having strained compensation layer |
JP2009164158A (ja) * | 2007-12-28 | 2009-07-23 | Panasonic Corp | 半導体装置及びその製造方法 |
JP5524462B2 (ja) * | 2008-08-06 | 2014-06-18 | シャープ株式会社 | 半導体装置 |
WO2011024367A1 (ja) * | 2009-08-27 | 2011-03-03 | パナソニック株式会社 | 窒化物半導体装置 |
CN102299071A (zh) * | 2010-06-23 | 2011-12-28 | 中国科学院微电子研究所 | 一种提高AlGaN/GaN HEMT频率特性的方法 |
CN102306659B (zh) * | 2011-09-08 | 2013-06-19 | 浙江大学 | 一种基于体电场调制的ldmos器件 |
CN102903738B (zh) * | 2012-09-06 | 2016-08-17 | 苏州晶湛半导体有限公司 | Ⅲ族氮化物半导体器件及其制造方法 |
CN103117303B (zh) * | 2013-02-07 | 2016-08-17 | 苏州晶湛半导体有限公司 | 一种氮化物功率器件及其制造方法 |
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Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005217049A (ja) * | 2004-01-28 | 2005-08-11 | Sanken Electric Co Ltd | 半導体装置 |
JP2007158143A (ja) * | 2005-12-07 | 2007-06-21 | Nippon Telegr & Teleph Corp <Ntt> | ヘテロ接合型電界効果トランジスタ |
JP2007250721A (ja) * | 2006-03-15 | 2007-09-27 | Matsushita Electric Ind Co Ltd | 窒化物半導体電界効果トランジスタ構造 |
JP2007294769A (ja) * | 2006-04-26 | 2007-11-08 | Toshiba Corp | 窒化物半導体素子 |
WO2010001607A1 (ja) * | 2008-07-03 | 2010-01-07 | パナソニック株式会社 | 窒化物半導体装置 |
WO2012054122A1 (en) * | 2010-10-20 | 2012-04-26 | National Semiconductor Corporation | Hemt with increased buffer breakdown voltage |
WO2012054123A1 (en) * | 2010-10-20 | 2012-04-26 | National Semiconductor Corporation | Hemt with floating and grounded substrate regions |
JP2012156320A (ja) * | 2011-01-26 | 2012-08-16 | Toshiba Corp | 半導体素子 |
JP2012231003A (ja) * | 2011-04-26 | 2012-11-22 | Advanced Power Device Research Association | 半導体装置 |
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