JP2016506634A5 - - Google Patents

Download PDF

Info

Publication number
JP2016506634A5
JP2016506634A5 JP2015552169A JP2015552169A JP2016506634A5 JP 2016506634 A5 JP2016506634 A5 JP 2016506634A5 JP 2015552169 A JP2015552169 A JP 2015552169A JP 2015552169 A JP2015552169 A JP 2015552169A JP 2016506634 A5 JP2016506634 A5 JP 2016506634A5
Authority
JP
Japan
Prior art keywords
growth substrate
led die
light
active layer
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2015552169A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016506634A (ja
JP6751562B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/IB2014/058077 external-priority patent/WO2014108821A1/en
Publication of JP2016506634A publication Critical patent/JP2016506634A/ja
Publication of JP2016506634A5 publication Critical patent/JP2016506634A5/ja
Application granted granted Critical
Publication of JP6751562B2 publication Critical patent/JP6751562B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2015552169A 2013-01-10 2014-01-06 側方放射用に成形された成長基板を有するｌｅｄ Active JP6751562B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361750914P 2013-01-10 2013-01-10
US61/750,914 2013-01-10
PCT/IB2014/058077 WO2014108821A1 (en) 2013-01-10 2014-01-06 Led with shaped growth substrate for side emission

Publications (3)

Publication Number Publication Date
JP2016506634A JP2016506634A (ja) 2016-03-03
JP2016506634A5 true JP2016506634A5 (https=) 2017-02-09
JP6751562B2 JP6751562B2 (ja) 2020-09-09

Family

ID=50000054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015552169A Active JP6751562B2 (ja) 2013-01-10 2014-01-06 側方放射用に成形された成長基板を有するｌｅｄ

Country Status (7)

Country Link
US (1) US20150340566A1 (https=)
EP (1) EP2943986B1 (https=)
JP (1) JP6751562B2 (https=)
KR (1) KR102146595B1 (https=)
CN (1) CN104885235B (https=)
TW (1) TWI645577B (https=)
WO (1) WO2014108821A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104081547A (zh) * 2012-02-15 2014-10-01 松下电器产业株式会社 发光装置以及其制造方法
BR112015025346A2 (pt) * 2013-04-05 2017-07-18 Federal Mogul Corp pistão produzido através do uso de técnicas de fabricação de aditivos
US9831407B2 (en) * 2013-11-21 2017-11-28 Lumens Co., Ltd. Light emitting device package, backlight unit, illumination apparatus, and method of manufacturing light emitting device package
CN105765722B (zh) * 2013-11-22 2019-10-22 赫普塔冈微光有限公司 紧凑光电模块
TWI757315B (zh) * 2017-07-28 2022-03-11 晶元光電股份有限公司 發光裝置以及其製造方法
WO2019028314A1 (en) * 2017-08-03 2019-02-07 Cree, Inc. HIGH DENSITY PIXELIZED LED CHIPS AND NETWORK DEVICES AND METHODS OF MANUFACTURE
DE102017129623B4 (de) 2017-12-12 2024-03-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Licht emittierendes Halbleiterbauelement
US10862002B2 (en) 2018-04-27 2020-12-08 Facebook Technologies, Llc LED surface modification with ultraviolet laser
US10811581B2 (en) 2018-06-15 2020-10-20 Nichia Corporation Method of manufacturing semiconductor device
CN109638137A (zh) * 2018-11-07 2019-04-16 惠州市华星光电技术有限公司 倒装led芯片及直下式背光模组
US11681090B2 (en) 2019-05-30 2023-06-20 Nichia Corporation Light emitting module and method of manufacturing same
JP6852822B2 (ja) * 2019-05-30 2021-03-31 日亜化学工業株式会社 発光モジュール及びその製造方法
CN115413368A (zh) * 2020-03-18 2022-11-29 艾维森纳科技有限公司 用于平面内光学互连的led阵列

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61127186A (ja) * 1984-11-22 1986-06-14 Sharp Corp 逆円錐型発光素子ランプ
JPH03227078A (ja) * 1990-01-31 1991-10-08 Nec Corp 発光ダイオード
JPH07263743A (ja) * 1994-03-18 1995-10-13 Hitachi Cable Ltd 発光ダイオード
US5986754A (en) * 1997-12-08 1999-11-16 Lifescan, Inc. Medical diagnostic apparatus using a Fresnel reflector
JPH11330565A (ja) * 1998-05-15 1999-11-30 Sanyo Electric Co Ltd 発光装置
WO2001061765A1 (de) * 2000-02-15 2001-08-23 Osram Opto Semiconductors Gmbh Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung
US7023022B2 (en) * 2000-11-16 2006-04-04 Emcore Corporation Microelectronic package having improved light extraction
EP1225643A1 (en) * 2001-01-23 2002-07-24 Interuniversitair Microelektronica Centrum Vzw High efficiency unilateral light emitting device and method for fabricating such device
US6515308B1 (en) * 2001-12-21 2003-02-04 Xerox Corporation Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
JP2004056088A (ja) * 2002-05-31 2004-02-19 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2004128057A (ja) * 2002-09-30 2004-04-22 Fuji Photo Film Co Ltd 発光装置およびその製造方法
JP4114557B2 (ja) * 2003-06-25 2008-07-09 松下電工株式会社 発光装置
JP4288481B2 (ja) * 2003-10-02 2009-07-01 シチズン電子株式会社 発光ダイオード
JP4211559B2 (ja) * 2003-10-08 2009-01-21 セイコーエプソン株式会社 光源装置及びプロジェクタ
TW200419832A (en) * 2004-04-16 2004-10-01 Uni Light Technology Inc Structure for increasing the light-emitting efficiency of a light-emitting device
US7423297B2 (en) * 2006-05-03 2008-09-09 3M Innovative Properties Company LED extractor composed of high index glass
US8080828B2 (en) * 2006-06-09 2011-12-20 Philips Lumileds Lighting Company, Llc Low profile side emitting LED with window layer and phosphor layer
US7626210B2 (en) * 2006-06-09 2009-12-01 Philips Lumileds Lighting Company, Llc Low profile side emitting LED
US8158990B2 (en) * 2006-10-05 2012-04-17 Mitsubishi Chemical Corporation Light emitting device using GaN LED chip
JP4920497B2 (ja) * 2007-05-29 2012-04-18 株式会社東芝 光半導体装置
JP2009032958A (ja) * 2007-07-27 2009-02-12 Kyocera Corp 発光素子及び照明装置
US7652301B2 (en) * 2007-08-16 2010-01-26 Philips Lumileds Lighting Company, Llc Optical element coupled to low profile side emitting LED
CN101868865B (zh) * 2007-11-20 2012-08-22 皇家飞利浦电子股份有限公司 具有波长转换的侧发射器件
WO2010056083A2 (ko) * 2008-11-14 2010-05-20 삼성엘이디 주식회사 반도체 발광소자
US8704257B2 (en) * 2009-03-31 2014-04-22 Epistar Corporation Light-emitting element and the manufacturing method thereof
US8653546B2 (en) * 2009-10-06 2014-02-18 Epistar Corporation Light-emitting device having a ramp
TWI394298B (zh) * 2010-01-29 2013-04-21 榮創能源科技股份有限公司 半導體發光元件封裝結構
CN102623600A (zh) * 2011-01-31 2012-08-01 隆达电子股份有限公司 半导体发光结构
US9263636B2 (en) * 2011-05-04 2016-02-16 Cree, Inc. Light-emitting diode (LED) for achieving an asymmetric light output

Similar Documents

Publication Publication Date Title
JP2016506634A5 (https=)
US8217488B2 (en) GaN light emitting diode and method for increasing light extraction on GaN light emitting diode via sapphire shaping
KR102188494B1 (ko) 반도체 발광소자, 반도체 발광소자 제조방법 및 반도체 발광소자 패키지 제조방법
JP6510888B2 (ja) 半導体発光素子の製造方法
KR102146595B1 (ko) 측면 방출을 위한 형상의 성장 기판을 가지는 led
JP5118688B2 (ja) 半導体発光素子
JP2012525690A5 (https=)
US9142721B2 (en) Semiconductor light emitting device and manufacturing method of the same
JP2010003978A (ja) 発光装置
TWM513459U (zh) 發光二極體晶片、發光裝置以及發光二極體的晶圓級結構
JP6164560B2 (ja) 水平型パワーｌｅｄ素子及びその製造方法
JP2015053361A (ja) 半導体発光装置及びその製造方法
JP2012074701A (ja) パターン基板、及びそれを用いた発光ダイオード
KR101273481B1 (ko) 발광소자 및 그 제조방법
JP5592904B2 (ja) 半導体発光素子
KR101283444B1 (ko) 수평형 파워 ｌｅｄ 소자 및 그 제조방법
US9147810B2 (en) Light emitting diode and method for manufacturing the same
CN103035807A (zh) 发光二极管晶粒及其制作方法、背光模组
US9985170B2 (en) Flip chip light emitting diode having transparent material with surface features
US9362452B2 (en) Light-emitting device and the manufacturing method thereof
KR101340322B1 (ko) 수평형 파워 led 소자
KR20090041179A (ko) 발광 다이오드 및 그 제조 방법
TWM491255U (zh) 發光二極體晶片
KR20180101122A (ko) 컨벡스 칩 스케일 패키지 및 그의 제조 방법
TW201545376A (zh) 發光二極體晶片