TWI394298B - 半導體發光元件封裝結構 - Google Patents
半導體發光元件封裝結構 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 72
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- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
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- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
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- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Description
本發明涉及一種半導體發光元件的結構,特別是關於具有反射結構之半導體發光元件封裝結構。
隨著半導體發光元件(semiconductor light emitting device)之技術日益進步,越來越多產品的發光源均採用發光二極體(light emitting diode,LED)、有機發光二極體(organic light emitting diode,OLED)或雷射二極體(laser diode,LD)。半導體發光元件相較於傳統燈泡其特點包含較長的壽命、較低的能量消耗、較低的熱能產生、較少的紅外光光譜產生、以及元件尺寸較小(compact)。然而,現今半導體發光元件常需藉由封裝結構形成表面元件(surface mounted device,SMD),或是具有反射杯殼的結構以固定出光光場,但反射杯殼通常是PPA或PPB之白色塑膠材料,其反射的效果有限並且會吸收光線進而影響半導體發光元件的出光效益。因此,如何有效的增加半導體發光元件封裝結構的出光效益,是目前尚需一項新的技術來解決上述的問題。
鑿於上述發明背景,本發明之目的為提供一種具有高效率反射結構的半導體發光元件封裝結構,可有效的提升半導體發光元件的光萃取,並有效的集中半導體發光元件的光場。
本發明提供一半導體發光元件封裝結構,具有至少一半導體發光元件、一導線架以及一反射結構,其中半導體發光元件係用來發出至少一第一波長之光線。而前述之導線架包含一承載電極以及一連結電極,其中上述之半導體發光元件係設置於上述承載電極上並且電性連結於上述連結電極。再者,前述之反射結構另包含有一反射面,圍繞於上述半導體發光元件,其中反射面具有複數個奈米反射結構。
藉由本發明提供之半導體發光元件封裝結構,能有效的提高半導體發光元件之發光效率,並且有效的集中半導體發光元件之光場,使得本發明所提供之半導體發光元件封裝結構更適合運用於背光模組或照明的模組。
本發明在此所探討的方向為一種半導體發光元件封裝結構。為了能徹底地瞭解本發明,將在下列的描述中提出詳盡的步驟及其組成。顯然地,本發明的施行並未限定於半導體發光元件封裝結構之技藝者所熟習的特殊細節。另一方面,眾所周知的組成或步驟並未描述於細節中,以避免造成本發明不必要之限制。本發明的較佳實施例會詳細描述如下,然而除了這些詳細描述之外,本發明還可以廣泛地施行在其他的實施例中,且本發明的範圍不受限定,其以之後的專利範圍為準。
下文將配合圖示與範例,詳細說明本發明提供之各個較佳實施例及技術內容。
請參照圖1,本發明提供一半導體發光元件封裝結構1,
具有一半導體發光元件10、一導線架20以及一反射結構30,其中半導體發光元件10係用來發出至少一第一波長之光線。導線架20包含一承載電極201以及一連結電極202,其中半導體發光元件10係設置於承載電極201上,並且藉由金屬導線40電性連結於上述連結電極202。然而,半導體發光元件10的電連結方式並不侷限於前述結構,亦可藉由覆晶(flip-chip)(圖未示)的電性連結結構固定於導線架20上。本發明較佳的實施例中,半導體發光元件10可以為III-V族化合物半導體晶片或II-VI族化合物半導體晶片,並且可發出可見或不可見的光束,例如:紫外(UV)光、藍光、綠光或多波長的半導體發光元件。值得注意的是,本發明所提供之半導體發光元件10並不只侷限於發光二極體晶粒,亦可以為雷射二極體或有機發光二極體。
上述半導體發光元件10亦可包含兩個以上之半導體發光元件。可發出可見或不可見的光束,例如:紫外光、紫光、藍光、綠光、紅光、藍光、黃光或多波長的半導體發光元件。再者,本發明所提供之半導體發光元件10亦可以為兩種以上相同波長之半導體發光元件、兩種以上不同波長的半導體發光元件或多種多波長的半導體發光元件等組合。
此外,反射結構30包含有一第一反射面31,圍繞於上述半導體發光元件10,請參照圖2,其中第一反射面31具有複數個第一奈米反射結構311。然而,半導體發光元件封裝結構1包含一覆蓋層50及摻雜於覆蓋層50中的至少一波
長轉換單元60,其中覆蓋層50的材質包含下列至少一種物質或其組合:二氧化矽(SiO2)、環氧樹脂(eooxy)或其它任一可透光之材料。於本發明較佳實施例中,上述之覆蓋層50另包含擴散顆粒(圖未示)摻雜於其中,藉此以增加光線於覆蓋層50之中的散射。
波長轉換單元60受到前述第一波長之光線激發後,會發出不同於第一波長的第二波長之光線,並且與第一波長的光線混光後形成多波段的混光,使得半導體發光元件10之封裝結構可同時發出具有多波長的光線。而前述波長轉換單元60可以為釔鋁石榴石(YAG)、鋱鋁石榴石(TAG)、矽酸鹽、氮化物、氮氧化物、磷化物、硫化物或其組合。於本發明的一較佳實施例中,半導體發光元件10可發出藍色光,而波長轉換單元60受半導體發光元件10之光線照射並激發形成黃光發出,藉由上述兩種不同波長的光線混光後,使得本發明提供之半導體發光元件10之封裝結構可發出白光。
請參照圖2,複數個第一奈米反射結構311係形成於第一反射面31上,並形成階梯狀結構,其中複數個奈米反射結構311之材質可以為金屬的材質,例如:鋁(Al)或鈦(Ti)。並且,複數個第一奈米反射結構311可以先利用電子束微影(E-beam)蝕刻技術或光微影蝕刻技術形成階梯的結構。此外,上述反射結構30的材質可以為塑膠(plastic)、陶瓷(ceramic)、矽(silicon)或金屬(metal),其中複數個奈米反射結構311的折射率大於上述反射結構30的折射率。
值得說明的是,請繼續參照圖2,複數個第一奈米反射結構311彼此的間距為P0,而複數個第一奈米反射結構311具有一深度H0,於實施例中,複數個第一奈米反射結構311的深度H0與彼此的間距P0的比值約大於或等於2,即H0/P0≧2。另外,複數個第一奈米反射結構311彼此的間距P0係小於可見光波長的1/2,尤其範圍大約是90~130奈米(nm)為本發明較佳的實施例範圍。由於奈米反射結構的實體結構遠小於光波長,其高精密度表面結構與光相互間的實體作用能夠促成光處理功能的重新排列。這種排列方式能夠產生更高的密度、更佳的性能和更高的整合度,因而根本上改變光學系統設計方法。並且,藉由奈米反射結構,能有效的提高半導體發光元件之發光效率,並且有效的集中半導體發光元件之光場。
請參照圖3之俯視圖,其中複數個第一奈米反射結構311之俯視結構為環狀之矩形的結構圍繞半導體發光元件10。然而,第一奈米反射結構311之俯視結構亦可以為環狀之圓形、環狀之橢圓形、環狀之菱形、環狀之三角形或環狀之不規則形狀等或其組合之結構(圖未示)。
值得注意的是,前述實施例中,複數個第一奈米反射結構311之剖面結構為矩形之結構(請參照圖2之剖面圖)。然而,請參照圖4A至圖4F之剖面示意圖,本發明另提供不同形狀之複數個第一奈米反射結構311b~311g之剖面結構,其中複數個奈米反射結構311b~3112依序亦可以為下列至少一種形狀或其組合:梯形、倒梯形、橢圓形、半圓形、金字塔形、倒金字塔型或其它不規則等形狀
。
請參照圖5,本發明第二實施例提供一半導體發光元件封裝結構2,與上述第一實施例半導體發光元件封裝結構1之結構基本相同,不同之處在於:半導體發光元件封裝結構2另包含一第二反射面32形成於導線架20上,請參照圖6,其中第二反射面32具有複數個第二奈米反射結構312。複數個第二奈米反射結構312係形成於第二反射面32之上表面,並形成複數個凹槽結構,其中複數個第二奈米反射結構312可以先利用電子束微影蝕刻或光微影蝕刻的技術形成。本實施例包含複數個第二奈米反射結構312於導線架20上,藉由形成反射結構於導線架20上以增加反射效率。
請繼續參照圖6,上述複數個第二奈米反射結構312之材質可以為金屬的材質,例如:鋁(Al)或鈦(Ti)等。並且,上述複數個第二奈米反射結構312彼此的間距為P1,而複數個第二奈米反射結構312具有一深度H1,於本發明較佳的實施例中,複數個第二奈米反射結構312的深度H1與彼此的間距P1的比值約大於或等於2,即H1/P1≧2。另外,複數個第二奈米反射結構312彼此的間距P1係小於可見光波長的1/2,尤其範圍大約是90~130奈米(nm)為本發明較佳的實施例範圍。
同樣地,從俯視結構中,本發明另提供不同的實施例,其中複數個第二奈米反射結構312之俯視結構可以為環狀之矩形、環狀之圓形、環狀之橢圓形、環狀之菱形、環狀之三角形或環狀之不規則形狀等或其組合之結構(未顯
示於圖示中)。此外,前述實施例中,複數個第二奈米反射結構312之剖面結構為矩形之結構(請參照圖6之剖面示意圖)。然而,請參照圖7A至7F圖之剖面示意圖,本發明另提供不同形狀之複數個第二奈米反射結構312b~312g,上述複數個奈米反射結構312b~312g之剖面結構依序亦可以為下列至少一種形狀或其組合:梯形、倒梯形、橢圓形、半圓形、金字塔形、倒金字塔型或其它不規則等形狀。
從本發明手段與具有的功效中,可以得到本發明具有諸多的優點。首先,本發明利用複數個奈米反射結構形成於半導體發光元件封裝結構之反射面上,可以達到增加光反射效率及光萃取,同時有效地集中半導體發光元件的光場。
另外,將複數個奈米反射結構形成於導線架上,藉此不但可增加半導體發光元件之光反射效率及光萃取,亦可以增加散熱的功效,原因是複數個奈米反射結構形成於導線架上亦可以增加導線架與外部接觸的表面積,進而增加導線架的導熱效果。
顯然地,依照上面實施例中的描述,本發明可能有許多的修正與差異。因此需要在其附加的權利要求項之範圍內加以理解,除了上述詳細的描述外,本發明還可以廣泛地在其他的實施例中施行。上述僅為本發明之較佳實施例而已,並非用以限定本發明之申請專利範圍;凡其它未脫離本發明所揭示之精神下所完成的等效改變或修飾,均應包含在下述申請專利範圍內。
1、2‧‧‧半導體發光元件封裝結構
10‧‧‧半導體發光元件
20‧‧‧導線架
201‧‧‧承載電極
202‧‧‧連結電極
30‧‧‧反射結構
31‧‧‧第一反射面
311‧‧‧第一奈米反射結構
311b~311g‧‧‧第一奈米反射結構
312‧‧‧第二奈米反射結構
312b~312g‧‧‧第二奈米反射結構
32‧‧‧第二反射面
40‧‧‧金屬導線
50‧‧‧覆蓋層
60‧‧‧波長轉換單元
H0、H1‧‧‧深度
P0、P1‧‧‧間距
圖1顯示本發明第一實施例的剖面示意圖;圖2顯示本發明第一實施例之第一反射面的剖面示意圖;圖3顯示本發明第一實施例的俯視示意圖;圖4A至4F顯示本發明之第一奈米反射結構的剖面示意圖;圖5顯示本發明第二實施例的剖面示意圖;圖6顯示本發明第二實施例之第二反射面的剖面示意圖;以及圖7A至7F顯示本發明之第二奈米反射結構的剖面示意圖。
1‧‧‧半導體發光元件封裝結構
10‧‧‧半導體發光元件
20‧‧‧導線架
30‧‧‧反射結構
31‧‧‧第一反射面
40‧‧‧金屬導線
50‧‧‧覆蓋層
60‧‧‧波長轉換單元
201‧‧‧承載電極
202‧‧‧連結電極
Claims (10)
- 一種半導體發光元件封裝結構,包含:至少一半導體發光元件,係用來發出至少一第一波長之光線;一導線架,具有一承載電極以及一連結電極,其中該半導體發光元件係設置於該承載電極上並且電性連結於該連結電極;以及一反射結構,具有一第一反射面圍繞於該半導體發光元件,其中該第一反射面具複數個奈米反射結構,該反射結構還具有一形成於導線架上的第二反射面,複數個第二奈米反射結構係形成於第二反射面之上表面,並形成複數個凹槽結構。
- 根據申請專利範圍第1項之半導體發光元件封裝結構,其中該複數個奈米反射結構彼此之間的間距小於可見光波長的1/2。
- 根據申請專利範圍第2項之半導體發光元件封裝結構,其中該複數個奈米反射結構彼此之間的間距的範圍大約為90~130奈米(nm)。
- 根據申請專利範圍第2項之半導體發光元件封裝結構,其中該複數個奈米反射結構具有一深度,並且該奈米反射結構之深度與間距的比值大於或等於2。
- 根據申請專利範圍第1項之半導體發光元件封裝結構,其中該複數個奈米反射結構之剖面結構為下列至少一種形狀或其組合:梯形、倒梯形、橢圓形、半圓形、矩形、金字塔形、倒金字塔型或其它不規則等形狀。
- 根據申請專利範圍第1項之半導體發光元件封裝結構,其中該複數個奈米反射結構為金屬的材質。
- 根據申請專利範圍第1項之半導體發光元件封裝結構,其中該反射結構為下列至少一材質所構成:塑膠(plastic)、陶瓷(ceramic)、矽(silicon)或金屬(metal)。
- 根據申請專利範圍第1項之半導體發光元件封裝結構,其中該複數個奈米反射結構的折射率大於該反射結構的折射率。
- 根據申請專利範圍第1項之半導體發光元件封裝結構,更包含一覆蓋層,其中該覆蓋層包覆該半導體發光元件以及一部份的導線架,並且該覆蓋層包含可透光的材質。
- 根據申請專利範圍第9項之半導體發光元件封裝結構,更包含至少一波長轉換單元摻雜於該覆蓋層中,其中該波長轉換單元受到該第一波長之光線激發後,發出不同於該第一波長的第二波長之光線。
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EP2943986B1 (en) * | 2013-01-10 | 2023-03-01 | Lumileds LLC | Led with shaped growth substrate for side emission and method of its fabrication |
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US6670648B2 (en) * | 2001-07-19 | 2003-12-30 | Rohm Co., Ltd. | Semiconductor light-emitting device having a reflective case |
US20060170335A1 (en) * | 2005-01-31 | 2006-08-03 | Samsung Electronics Co., Ltd. | LED device having diffuse reflective surface |
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